ON Semiconductor FDG6304P User Manual

Digital FET, Dual P-Channel

FDG6304P

General Description

These dual P−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Features

• −25 V, −0.41 A Continuous, −1.5 A Peak

♦ R ♦ R

• Very Low Level Gate Drive Requirements Allowing Direct

Operation in 3 V Circuits (V

• Gate−Source Zener for ESD Ruggedness (>6 kV Human Body

Model)

• Compact Industry Standard SC70−6 Surface Mount Package

• These Devices are Pb−Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter FDG6304P Units

DSS

GSS

TJ, T

STG

ESD Electrostatic Discharge Rating

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

= 1.1 W @ VGS = −4.5 V

DS(ON)

= 1.5 W @ VGS = −2.7 V

DS(ON)

< 1.5 V)

GS(th)

= 25°C unless otherwise noted)

Drain−Source Voltage −25 V

Gate−Source Voltage −8 V

Drain/Output Current

Maximum Power Dissipation (Note 1) 0.3 W

Operating and Storage Temperature Range

MIL−STD−883D Human Body Model (100 pF / 1500 W)

Continuous −0.41

Pulsed −1.5

−55 to +150 °C

6.0 kV

www.onsemi.com

SC−88/SC70−6/SOT−363

CASE 419B−02

MARKING DIAGRAM

04M

04 = Specific Device Code M = Assembly Operation Month

PIN CONNECTIONS

1 or 4*

2 or 5

3 or 6

*The pinouts are symmetrical; pin 1 and 4 are

interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

6 or 3

5 or 2

4 or 1*

June, 2020 − Rev. 6

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

1 Publication Order Number:

FDG6304P/D

FDG6304P

THERMAL CHARACTERISTICS

Symbol Parameter Ratings Unit

1. R

mounting surface of the drain pins. R minimum pad mounting on FR−4 board in still air.

Thermal Resistance, Junction−to−Ambient (Note 1) 415

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

is guaranteed by design while R

is determined by the user’s board design. R

= 415°C/W on

_C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Unit

OFF CHARACTERISTICS

DBV

DSS

GSS

DSS

Drain−Source Breakdown Voltage

Breakdown Voltage Temperature

/ DT

Coefficient

Zero Gate Voltage Drain Current

VGS=0V, ID= −250 mA

ID= −250 mA, Referenced to 25_C

VDS= −20 V, VGS=0V − − −1

VDS= −20 V, VGS=0V, TJ = 55_C

Gate−Body Leakage Current VGS= −8V, VDS=0V − − 100 nA

−25 − − V

− −22 −

mV/_C

− − −10

ON CHARACTERISTICS (Note 2)

GS(th)

DS(on)

Gate Threshold Voltage

/ DT

Temperature Coefficient

Static Drain−Source On−Resistance

VDS=VGS, ID= −250 mA

ID= −250 mA, Referenced to 25_C

VGS= −4.5 V, ID= −0.41 A − 0.85 1.1 W

VGS= −4.5 V, ID= −0.41 A,

= 125_C

−0.65 −0.82 −1.5 V

− 2 −

mV/_C

− 1.2 1.9

VGS= −2.7 V, ID= −0.25 A − 1.15 1.5

D(on)

On−State Drain Current VGS= −4.5 V, VDS= −5V −1.5 − − A

Forward Transconductance VDS= −5V, ID= −0.41 A − 0.9 − S

DYNAMIC CHARACTERISTICS

iss

oss

rss

Input Capacitance

Output Capacitance − 34 − pF

Reverse Transfer Capacitance − 10 − pF

VDS=10V, VGS= 0 V, f = 1.0 MHz

− 62 − pF

SWITCHING CHARACTERISTICS (Note 2)

D(on)

D(off)

Turn-On Delay Time

Turn-On Rise Time − 8 16 ns

Turn-Off Delay Time − 55 80 ns

Turn-Off Fall Time − 35 60 ns

Total Gate Charge

Gate−Source Charge − 0.31 − nC

Gate−Drain Charge − 0.29 − nC

VDD= −5V, ID= −0.5 A, V

= −4.5 V, R

GEN

=6W

VDS= −5V, ID= −0.41 A, V

= −4.5 V

− 7 15 ns

− 1.1 1.5 nC

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Source Current − − −0.25 A

Drain−Source Diode Forward

VGS=0V, IS= −0.25 A (Note 2) − −0.85 −1.2 V

Voltage

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%

www.onsemi.com

FDG6304P

TYPICAL PERFORMANCE CHARACTERISTICS

1.2

0.9

0.6

V = −4.5 V

−3.0 V

−2.7 V

−2.5 V

−2.0 V

2.5

1.5

V = −2.0 V

−2.5 V

−2.7 V

, NORMALIZED

0.3

, DRAIN−SOURCE CURRENT (A)

01234

−I

−VDS, DRAIN−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)

−1.5 V

DS(ON)

0.5

00.2 11.2

DRAIN−SOURCE ON−RESISTANCE

0.4

Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with

Drain Current and Gate Voltage

1.6 I

= −0.41 A

= −4.5 V

1.4

1.2

, NORMALIZED

0.8

DS(ON)

0.6

−50 −25 0 25 50 75 100 125 150

DRAIN−SOURCE ON−RESISTANCE

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On−Resistance Variation with

Temperature

, ON−RESISTANCE ( )

DS(ON)

12345

−VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On−Resistance Variation with

Gate−to−Source Voltage

−3.0 V

0.80.6

−3.5 V

TJ = 125°C

−4.5 V

ID = −0.2 A

25°C

VDS = −5 V

0.8

0.6

0.4

0.2

, DRAIN CURRENT (A)

−I

0.5 1 1.5 2 2.5 3

= −55°C

25 C

125

−VGS, GATE TO SOURCE VOLTAGE (V)

= −5 V

0.1

0.01

0.001

0.0001

, REVERSE DRAIN CURRENT (A)

0.2 0.4 0.6 0.8 1 1.2

−I

−VSD, BODY DIODE FORWARD VOLTAGE (V)

= 125°C

25 C

−55 C

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

www.onsemi.com

FDG6304P

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

I = −0.41 A

, GATE−SOURCE VOLTAGE (V)

0 0.4 0.8 1.2 1.6

−V

Qg, GATE CHARGE (nC)

V = −5 V

−10 V

−15 V

200

CAPACITANCE (pF)

f = 1 MHz

= 0 V

0.1 0.3 1 10 25

−VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

LIMIT

DS(ON)

0.5

0.1

VGS = −4.5 V

0.05 SINGLE PULSE

, DRAIN CURRENT (A)

= 415°C/W

−I

= 25°C

0.01

0.1 0.2 0.5 12 510 25 40

10 ms

100 ms

1 s

10 s

−VDS, DRAIN−SOURCE VOLTAGE (V)

1 ms

POWER (W)

0.0001 0.001 0.01 0.1 1 10 200

SINGLE PULSE TIME (sec)

iss

oss

rss

SINGLE PULSE

= 415°C/W

= 25°C

Figure 9. Maximum Safe Operating Area

D = 0.5

0.5

0.2

0.1

0.05

0.02

0.01

0.005

0.002

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.05

0.02

0.01 Single Pulse

0.0001 0.0 01 0.01 0. 1 1 10 100 200

Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design.

Figure 11. Transient Thermal Response Curve

Figure 10. Single Pulse Maximum Power

t , TIME (sec)

Dissipation

R R

P(pk)

Duty Cycle, D = t

(t) = r(t) * R

= 415°C/W

− TA = P * R

(t)

/ t

www.onsemi.com

FDG6304P

†

ORDERING INFORMATION

Device Order Number Device Marking Package Type Shipping

FDG6304P 04 SC−88/SC70−6/SOT−363

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

3000 / Tape & Reel

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

SCALE 2:1

654

123

bbb H

TOP VIEW

ccc

SIDE VIEW END VIEW

RECOMMENDED

SOLDERING FOOTPRINT*

0.30

0.65

PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

aaa H D

aaa C

2X 3 TIPS

0.66

SEATING PLANE

2.50

DIMENSIONS: MILLIMETERS

Cddd

A-B D

DETAIL A

CASE 419B−02

ISSUE Y

DETAIL A

GAGE PLANE

DATE 11 DEC 2012

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.

4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H.

5. DATUMS A AND B ARE DETERMINED AT DATUM H.

6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.

7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT.

MILLIMETERS

DIM MIN NOM MAX

A −−− −−− 1.10 A1 0.00 −−− 0.10 A2 0.70 0.90 1.00 0.027 0.035 0.039

b 0.15 0.20 0.25

C 0.08 0.15 0.22

D 1.80 2.00 2.20

2.00 2.10 2.20

E1 1.15 1.25 1.35

e 0.65 BSC

L 0.26 0.36 0.46 L2 0.15 BSC 0.006 BSC

aaa 0.15 0.006

bbb 0.30 0.012

ccc 0.10 0.004

ddd

0.10 0.004

INCHES

MIN NOM MAX

−−− −−− 0.043

0.000 −−− 0.004

0.006 0.008 0.010

0.003 0.006 0.009

0.070 0.078 0.086

0.078 0.082 0.086

0.045 0.049 0.053

0.026 BSC

0.010 0.014 0.018

GENERIC

MARKING DIAGRAM*

XXXMG

XXX = Specific Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

STYLES ON PAGE 2

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98ASB42985B

SC−88/SC70−6/SOT−363

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 2

www.onsemi.com

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE Y

DATE 11 DEC 2012

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

STYLE 7:

PIN 1. SOURCE 2

2. DRAIN 2

3. GATE 1

4. SOURCE 1

5. DRAIN 1

6. GATE 2

STYLE 13:

PIN 1. ANODE

2. N/C

3. COLLECTOR

4. EMITTER

5. BASE

6. CATHODE

STYLE 19:

PIN 1. I OUT

2. GND

3. GND

4. V CC

5. V EN

6. V REF

STYLE 25:

PIN 1. BASE 1

2. CATHODE

3. COLLECTOR 2

4. BASE 2

5. EMITTER

6. COLLECTOR 1

STYLE 2:

CANCELLED

STYLE 8:

CANCELLED

STYLE 14:

PIN 1. VREF

2. GND

3. GND

4. IOUT

5. VEN

6. VCC

STYLE 20:

PIN 1. COLLECTOR

2. COLLECTOR

3. BASE

4. EMITTER

5. COLLECTOR

6. COLLECTOR

STYLE 26:

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

STYLE 3:

CANCELLED

STYLE 9:

PIN 1. EMITTER 2

2. EMITTER 1

3. COLLECTOR 1

4. BASE 1

5. BASE 2

6. COLLECTOR 2

STYLE 15:

PIN 1. ANODE 1

2. ANODE 2

3. ANODE 3

4. CATHODE 3

5. CATHODE 2

6. CATHODE 1

STYLE 21:

PIN 1. ANODE 1

2. N/C

3. ANODE 2

4. CATHODE 2

5. N/C

6. CATHODE 1

STYLE 27:

PIN 1. BASE 2

2. BASE 1

3. COLLECTOR 1

4. EMITTER 1

5. EMITTER 2

6. COLLECTOR 2

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. COLLECTOR

4. EMITTER

5. BASE

6. ANODE

STYLE 10:

PIN 1. SOURCE 2

2. SOURCE 1

3. GATE 1

4. DRAIN 1

5. DRAIN 2

6. GATE 2

STYLE 16:

PIN 1. BASE 1

2. EMITTER 2

3. COLLECTOR 2

4. BASE 2

5. EMITTER 1

6. COLLECTOR 1

STYLE 22:

PIN 1. D1 (i)

2. GND

3. D2 (i)

4. D2 (c)

5. VBUS

6. D1 (c)

STYLE 28:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment.

STYLE 5:

PIN 1. ANODE

2. ANODE

3. COLLECTOR

4. EMITTER

5. BASE

6. CATHODE

STYLE 11:

PIN 1. CATHODE 2

2. CATHODE 2

3. ANODE 1

4. CATHODE 1

5. CATHODE 1

6. ANODE 2

STYLE 17:

PIN 1. BASE 1

2. EMITTER 1

3. COLLECTOR 2

4. BASE 2

5. EMITTER 2

6. COLLECTOR 1

STYLE 23:

PIN 1. Vn

2. CH1

3. Vp

4. N/C

5. CH2

6. N/C

STYLE 29:

PIN 1. ANODE

2. ANODE

3. COLLECTOR

4. EMITTER

5. BASE/ANODE

6. CATHODE

STYLE 6:

PIN 1. ANODE 2

2. N/C

3. CATHODE 1

4. ANODE 1

5. N/C

6. CATHODE 2

STYLE 12:

PIN 1. ANODE 2

2. ANODE 2

3. CATHODE 1

4. ANODE 1

5. ANODE 1

6. CATHODE 2

STYLE 18:

PIN 1. VIN1

2. VCC

3. VOUT2

4. VIN2

5. GND

6. VOUT1

STYLE 24:

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. CATHODE

5. CATHODE

6. CATHODE

STYLE 30:

PIN 1. SOURCE 1

2. DRAIN 2

3. DRAIN 2

4. SOURCE 2

5. GATE 1

6. DRAIN 1

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98ASB42985B

SC−88/SC70−6/SOT−363

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 2 OF 2

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

. ON Semiconductor reserves the right to make changes without further notice to any products herein.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

TECHNICAL SUPPORT North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative

◊

www.onsemi.com

ON Semiconductor FDG6304P User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual