ON Semiconductor Fairchild FEBFDD850N10LD_CS001, Fairchild FDD850N10LD User Manual

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User Guide for

FEBFDD850N10LD_CS001

35 W Boost Converter for

LED Drive using BoostPak

Featured Fairchild Product:

Direct questions or comments

about this evaluation board to:

“Worldwide Direct Support”

Fairchild Semiconductor.com

FDD850N10LD

© 2013 Fairchild Semiconductor Corporation FEBFDD850N10LD_CS001 • Rev. 1.0.0

Table of Contents

1. Introduction ............................................................................................................................... 3

1.1. Description ....................................................................................................................... 3

1.2. Features ............................................................................................................................ 3

1.3. FDD850N10LD Diagrams ............................................................................................... 3

2. Evaluation Board Specifications ............................................................................................... 4

3. Photographs............................................................................................................................... 5

4. Printed Circuit Board ................................................................................................................ 6

5. Schematic .................................................................................................................................. 7

6. Bill of Materials ........................................................................................................................ 8

7. Inductor Specifications ........................................................................................................... 10

8. Test Conditions & Test Equipment......................................................................................... 11

9. Performance of Evaluation Board ........................................................................................... 12

9.1. Switching Waveforms .................................................................................................... 12

9.2. Output Regulation Characteristics ................................................................................. 16

9.3. Loss Analysis ................................................................................................................. 17

9.4. Efficiency ....................................................................................................................... 20

9.5. Temperature ................................................................................................................... 21

9.6. EMI................................................................................................................................. 22

10. Revision History ..................................................................................................................... 23

© 2013 Fairchild Semiconductor Corporation 2 FEBFDD850N10LD_CS001 • Rev. 1.0.0

This user guide supports the evaluation kit for the FDD850N10LD. It should be used in

Figure 1. Pin Descriptions

Figure 2. Block Diagram

conjunction with the FDD850N10LD datasheets as well as Fairchild’s application notes
and technical support team. Please visit Fairchild’s website at www.fairchildsemi.com.

1. Introduction

This document describes the proposed solution for a driving of LED application using the
BoostPak (FDD850N10LD) for boost topology. The input voltage range is 20.4 V –

27.6 V and there is a single-channel DC output with a constant current of 640 mA at
55 V. This document contains a general description of FDD850N10LD, the converter
specification, a schematic, the bill of materials, and the typical operating characteristics.

1.1. Description

The N-channel MOSFET and NP diode are combined in one 5-lead D-Pak package
produced using Fairchild Semiconductor’s PowerTrench® process tailored to minimize on­state resistance while maintaining superior switching performance. The diode is a hyper­fast rectifier with low forward-voltage drop and excellent switching performance. Using the
BoostPak FDD850N10LD in low-power LED backlight driving applications results in
lower profile and cost savings by reducing part count, weight, and PCB size as well as
improving reliability due to lower leakage current than Schottky Barrier Diode (SBD).

1.2. Features

 Lower Conduction Resistance :

- R

- R

= 61 mΩ (Typ.) at VGS = 10 V, ID = 12 A

DS(on)

= 64 mΩ (Typ.) at VGS = 5.0 V, ID = 12 A

DS(on)

 Low Gate Charge (Typ. 22.2 nC)
 Low C
 Fast Reverse Recovery Time: t

(Typ. 42 pF)

rss

rr

 Fast Switching
 100% Avalanche Tested
 Improved dv/dt Capability
 RoHS Compliant

1.3. FDD850N10LD Diagrams

(Typ.) = 11 ns at IF = 5 A, di/dt = 200 A/µs

© 2013 Fairchild Semiconductor Corporation 3 FEBFDD850N10LD_CS001 • Rev. 1.0.0

2. Evaluation Board Specifications

Description

Symbol

Value

Comments

Input Voltage

V

IN, MIN.

20.4 V V

IN, TYP.

24.0 V

V

IN, MAX.

27.6 V

Switching Frequency

fsw

200 kHz

R35 (kΩ)=15000/f

sw

(kHz)

Output Voltage / Current

V

OUT

55 V I

OUT

0.64 A

Output Power

P

OUT

35 W

Efficiency

> 92%

Temperature

T

BoostPak

T

Inductor

T

MOSFET

< 65°C

Initial Application

LED Backlight

All data was measured under the condition, TA=25°C.

Table 1. Summary of Features and Performance

© 2013 Fairchild Semiconductor Corporation 4 FEBFDD850N10LD_CS001 • Rev. 1.0.0

3. Photographs

Figure 3. Top View (114 x 76 mm2)

Figure 4. Bottom View (114 x 76 mm2)

© 2013 Fairchild Semiconductor Corporation 5 FEBFDD850N10LD_CS001 • Rev. 1.0.0

4. Printed Circuit Board

114.3mm

76.2mm

114.3mm

63.5mm

114.3mm

Figure 5. Top Side

Figure 6. Bottom Side

© 2013 Fairchild Semiconductor Corporation 6 FEBFDD850N10LD_CS001 • Rev. 1.0.0

5. Schematic

Figure 7. Evaluation Board Schematic

© 2013 Fairchild Semiconductor Corporation 7 FEBFDD850N10LD_CS001 • Rev. 1.0.0

6. Bill of Materials

Item

No.

Reference

Part No.

Qty.

Description

Manufacturer

1

Q11

FDD850N10LD

1

BoostPak, D-Pak 5L

Fairchild

Semiconductor

2

Q12

FDD120AN15A0

1

150 V / 14 A / 120 Ω, D-Pak

Fairchild

Semiconductor

3

Q13

KTD1624

1

3 A / 60 V / NPN BJT, SOT-89

KEC

4

L1

DYCP1580-470

1

47µH / 0.073 Ω / 5 A, SMD Inductor

DONGYANG

TELECOM

5

U1

1 Main Controller

6

D1,D2

BAT54HT1G

2

0.2 A / 30 V Small Signal Diode,
SOD-323

Fairchild

Semiconductor

7

ZD1

MM3Z12VC

1

12 V / 200 mW Zener Diode, SOD-

323F

Fairchild

Semiconductor

8

C1

NXH35VB330MTPRB

1

330 µF / 35 V Electrolytic Capacitor

Samyoung

9

C2, C4, C5, C12,

C13, C15, C16,

C27

GRM21BR71H105KA12

8

1 µF / 50 V SMD Capacitor 2012

Murata

10

C3

GRM31CR71H475KA12

1

4.7 µF / 50 V SMD Capacitor 3216

Murata

11

C6, C10, C11,

C17, C18, C19

GRM188R71H102KA01

6

1 nF / 50 V SMD Capacitor 1608

Murata

12

C7

GRM188R71E221KA01

1

220 pF / 25 V SMD Capacitor 1608

Murata

13

C14

NXQ100VB100MTPRB

1

100 µF / 100 V Electrolytic Capacitor

Samyoung

14

C20, C21, C23,
C26, C28, C29,

C30, C31

GRM188R71E105KA12

8

1 µF / 25 V SMD Capacitor 1608

Murata

15

C24, C25

GRM188R71E154KA01

2

150 nF / 25 V SMD Capacitor 1608

Murata

16

R1, R25, R26,

R27, R28

MCR10ERTJ104

5

100 kΩ SMD Resistor 2012

Rhom

17

R2

MCR10ERTJ683

1

68 kΩ SMD Resistor 2012

Rhom

18

R3, R4

MCR10ERTJ623

2

62 kΩ SMD Resistor 2012

Rhom

19

R5, R44

MCR03ERTF30R0

2

30 Ω SMD Resistor 1608

Rhom

20

R6

MCR03ERTJ5R6

1

5.6 Ω SMD Resistor 1608

Rhom

21

R7

MCR03ERTF1002

1

10 kΩ SMD Resistor 1608

Rhom

22

R8, R9, R10, R11,

R12, R13, R14

MCR10ERTJ1R0

7

1 Ω SMD Resistor 2012

Rhom

23

R22, R23, R24

MCR10ERTJ100

3

10 Ω SMD Resistor 2012

Rhom

24

R29

MCR03ERTF1103

1

110 kΩ SMD Resistor 1608

Rhom

25

R30, R54, R55

MCR03ERTF1003

3

100 kΩ SMD Resistor 1608

Rhom

26

R31, R32, R36,
R37, R38, R53,

R58

MCR03ERTF2002

7

20 kΩ SMD Resistor 1608

Rhom

27

R33

MCR03ERTF6201

1

6.2 kΩ SMD Resistor 1608

Rhom

28

R34, R56

MCR03ERTF1000

2

100 Ω SMD Resistor 1608

Rhom

29

R35

MCR03ERTF7502

1

75 kΩ SMD Resistor 1608

Rhom

© 2013 Fairchild Semiconductor Corporation 8 FEBFDD850N10LD_CS001 • Rev. 1.0.0

Item

No.

Reference

Part No.

Qty.

Description

Manufacturer

30

R40, R43

MCR03ERTF3002

2

30 kΩ SMD Resistor 1608

Rhom

31

R41, R42

MCR03ERTF0000

2

0 Ω SMD Resistor 1608

Rhom

32

R45, R46, R47,

R48, R49

MCR10ERTJ7R5

5

7.5 Ω SMD Resistor 2012

Rhom

33

R57

MCR03ERTF5102

1

51 kΩ SMD Resistor 1608

Rhom

34

R59, R60

MCR03ERTF5101

2

5.1 kΩ SMD Resistor 1608

Rhom

35

R61, R62, R63,

R64, R65, R66

MCR10ERTJ911

6

910 Ω SMD Resistor 2012

Rhom

36

CON1

DG301_5.0_2P

1

2-Pin Terminal Block for Vin

DEGSON

ELECTRONICS

37

CON2

DG301_5.0_3P

1

3-Pin Terminal Block for LED

DEGSON

ELECTRONICS

38

SW1

SS12E17

1

1P2T Switch

VIMEX

39

F1

1 IF=4 A

© 2013 Fairchild Semiconductor Corporation 9 FEBFDD850N10LD_CS001 • Rev. 1.0.0

7. Inductor Specifications

HEAD OFFICE & FACTORY

942-5, Dohwa-Dong, Nam-gu,
Incheon, Korea

TEL : [phone]
FAX : [phone]

China Factory

No.28 Feng Huang Street,
Weifang Shandong, CHINA

TEL : [phone]
FAX : [phone]

Thailand Factory

3/3 Moo. 1 T. Napradoo
A.Phantong Chonburi

TEL : [phone]
FAX : [phone]

Top view

Front view

Bottom view

No.

Winding

Pin (S  F)

Wire

Turns

Winding Method

P1

1  3

0.35 Φ * 2

21.5 ± 2.0

Solenoid Winding
2  4

Pin

Specification

Inductance

1, 2 – 3, 4

47.0 µH

Resistance

0.073 Ω

Maximum Current

5.0 A

S : 1, 2

F : 3, 4

: WINDING START POINT

 Manufacturer: DONGYANG TELECOM CO., LTD.

 Part No : DYCP1580-470

Figure 8. Inductor Specification & Construction

(unit : mm)

Figure 9. Dimension Specification

Table 2. Winding Specifications

Table 3. Electrical Characteristics

© 2013 Fairchild Semiconductor Corporation 10 FEBFDD850N10LD_CS001 • Rev. 1.0.0

8. Test Conditions & Test Equipment

Evaluation Board #

FEBFDD850N10LD_CS001

Test Date

Test Temperature

TA=25°C

Test Equipments

DC Power Supply: H-3005D by FinePower
Power Analyzer: PM3000A by Voltech
Load: 100 W 100 ΩJ Adjustable Resistor
Oscilloscope: DPO7104 by Tectronix

Passive voltage probe - P6139
Differential high voltage probe - P5205
Current probe : TCP0030

Thermometer: Therma CAM SC640 by FLIR SYSTEMS

Oscilloscope

(DPO7104)

Power Analyzer

(PM3000A)

DC Power Supply

(H-3005D)

V

A

V

A

Power Resistor

(100W 85Ω, 100Ω)

Table 4. Test Conditions & Test Equipment

© 2013 Fairchild Semiconductor Corporation 11 FEBFDD850N10LD_CS001 • Rev. 1.0.0

Figure 10. Test Block Diagram

9. Performance of Evaluation Board

Input Voltage (V)

Remarks

20.4

24

27.6

Power On

MOSFET

V

ds

(V)

62.4

62.4

63.2

Diode

Vca (V)

69.6

69.6

68.8

Inductor

I

L_max

(A)

2.56

2.36

2.20

I

L_min

(A)

0.00

0.08

0.04

Normal

MOSFET

Vds (V)

64.0

64.0

64.0

Diode

Vca (V)

76.8

74.4

72.0

Inductor

I

L_max

(A)

2.60

2.36

2.20

I

L_min

(A)

0.96

0.68

0.48

Power Off

MOSFET

Vds (V)

64.8

63.2

63.2

Diode

Vca (V)

75.2

73.6

72.0

Inductor

I

L_max

(A)

2.68

2.48

2.24

I

L_min

(A)

-0.20

-0.20

-0.24

9.1. Switching Waveforms

Test Conditions

Connect the power resistor (85 Ω) to CON2 and measure the voltage and current stress
on the BoostPak (FDD850N10LD) under the specified conditions below.

Table 5. Test Result

© 2013 Fairchild Semiconductor Corporation 12 FEBFDD850N10LD_CS001 • Rev. 1.0.0

9.1.1. Power On

Waveforms: C1 (Vgs: 5 V/div), C2 (Vds: 20 V/div), C3 (IL: 1 A/div),
C4 (Vka: 20 V/div), Time (20 ms/div)

Figure 11. VIN=20.4 V

Figure 12. VIN=24 V

Figure 13. VIN=24 V

© 2013 Fairchild Semiconductor Corporation 13 FEBFDD850N10LD_CS001 • Rev. 1.0.0

9.1.2. Normal

Figure 14. VIN=20.4 V

Figure 15. VIN=24 V

Figure 16. VIN=24 V

Waveforms: C1 (Vgs: 5 V/div), C2 (Vds: 20 V/div), C3 (IL: 1 A/div), C4 (Vka: 20 V/div),
Time (10 µs/div)

© 2013 Fairchild Semiconductor Corporation 14 FEBFDD850N10LD_CS001 • Rev. 1.0.0

9.1.3. Power Off

Figure 17. VIN=20.4 V

Figure 18. VIN=24 V

Figure 19. VIN=24 V

Waveforms: C1 (Vgs: 5 V/div), C2 (Vds: 20 V/div), C3 (IL: 1 A/div), C4 (Vka: 20 V/div),
Time (50 ms/div)

© 2013 Fairchild Semiconductor Corporation 15 FEBFDD850N10LD_CS001 • Rev. 1.0.0

9.2. Output Regulation Characteristics

Input

Voltage (V)

P

out

=35 W

P

out

=45 W

Remarks

V

OUT

(V)

I

OUT

(A)

V

OUT

(V)

I

OUT

(A)

20.4

55.39

0.639

64.83

0.640

24.0

55.42

0.639

64.97

0.639

27.6

55.43

0.639

65.04

0.642

Figure 20. Output Regulation Characteristics

50.00

52.00

54.00

56.00

58.00

60.00

62.00

64.00

66.00

68.00

70.00

20.42427.6

Output voltage [V]

Input Voltage, Vin [V]

Vout=55V(35W)

Vout=65V(45W)

Test Conditions

Connect the power resistor (85 Ω, 100 Ω) to the CON2 and measure the output voltage
and current on the BoostPak (FDD850N10LD) after 30 minutes aging.

Table 6. Test Results

© 2013 Fairchild Semiconductor Corporation 16 FEBFDD850N10LD_CS001 • Rev. 1.0.0

9.3. Loss Analysis

Input

Voltage

(V)

MOSFET

Diode

Total

PD

(W)

PON
(W)

P

OFF

(W)

P

COND

(W)

P

TOT

(W)

PON
(W)

P

OFF

(W)

P

COND

(W)

P

TOT

(W)

20.4

0.17

0.11

0.14

0.42

0.02

0.38

0.53

0.93

1.34

24

0.15

0.09

0.09

0.34

0.02

0.37

0.52

0.91

1.24

27.6

0.13

0.09

0.07

0.28

0.02

0.36

0.52

0.90

1.18

Figure 21. Loss Analysis for VIN=24 V

Figure 22. Loss Distribution for VIN=24 V

Eon_M

45%

Eoff_M

28%

Econd_M

27%

Power Loss of MOSFET

Eon_D

2%

Eoff_D

41%

Econd_D

57%

Power Loss of Diode

Eon_M

12%

Eoff_M

8%

Econd_M

7%

Eon_D

2%

Eoff_D

30%

Econd_D

41%

Total Power Loss

0.00

0.20

0.40

0.60

0.80

1.00

MOSFET

Diode

Conduction loss

0.09

0.52

Turn off loss

0.09

0.37

Turn on loss

0.15

0.02

Power Loss [W]

Power distribution

Test Conditions

Connect the power resistor (85 Ω) to the CON2 and measure the output voltage and
current on the BoostPak (FDD850N10LD) after 30 minutes aging.

Table 7. Test Results

© 2013 Fairchild Semiconductor Corporation 17 FEBFDD850N10LD_CS001 • Rev. 1.0.0

Figure 23. Loss Comparison for Input Voltage, VIN

4-Period Waveforms, Time (2 µs/div)

Conduction Waveforms, Time (500 ns/div)

Turn-On Waveforms, Time (50 ns/div)

Turn-Off Waveforms, Time (50 ns/div)

Figure 24. MOSFET Waveforms for VIN=24 V

0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

20.42427.6

Power Loss [W]

Input Voltage, Vin [V]

MOSFET

Diode

Total loss

Waveforms: C1 (Vgs: 5 V/div), C2 (Vds: 20 V/div), C3 (Id: 1 A/div)

© 2013 Fairchild Semiconductor Corporation 18 FEBFDD850N10LD_CS001 • Rev. 1.0.0

Waveforms : C1(Vgs:5V/div), C4(Vak:20V/div), M2(Ia:1A/div)

4-Period Waveforms, Time (2 µs/div)

Conduction Waveforms, Time (500 ns/div)

Turn-On Waveforms, Time (50 ns/div)

Turn-Off Waveforms, Time (50 ns/div)

Figure 25. Diode Waveforms for VIN=24 V

© 2013 Fairchild Semiconductor Corporation 19 FEBFDD850N10LD_CS001 • Rev. 1.0.0

9.4. Efficiency

Input Voltage

Input Power

Output Power

Efficiency

Remark

20.4 V

37.75 W

35.39 W

93.75%

24.0 V

37.54 W

35.42 W

94.36%

27.6 V

37.38 W

35.43 W

94.78%

Input Voltage

Input Power

Output Power

Efficiency

Remark

20.4 V

44.48 W

41.47 W

93.23%

24.0 V

44.20 W

41.52 W

93.92%

27.6 V

44.14 W

41.73 W

94.54%

Figure 26. Efficiency Curve

90.00

91.00

92.00

93.00

94.00

95.00

96.00

97.00

98.00

99.00

100.00

20.42427.6

Efficiency [%]

Input Voltage, Vin [V]

Vout=55V

Vout=65V

Test Conditions

Connect the power resistor (85 Ω, 100 Ω) to the CON2 and measure the output voltage
and current on the BoostPak (FDD850N10LD) after 30 minutes aging.

Table 8. Test Results of V

= 55 V ( 35 W)

OUT

Table 9. Test Results of V

= 65 V (45 W)

OUT

© 2013 Fairchild Semiconductor Corporation 20 FEBFDD850N10LD_CS001 • Rev. 1.0.0

9.5. Temperature

VIN=20.4 V

VIN=24 V

VIN=27.6 V

Remark

BoostPak (Q11)

66.9°C

61.5°C

59.3°C

PKG Top

Inductor

63.7°C

59.6°C

56.6°C

R8~R14

57.6°C

52.8°C

49.8°C

MOSFET (Q12)

50.8°C

50.0°C

52.1°C

R45~R49

58.9°C

57.3°C

60°C

Figure 27. Temperature Curve

Figure 28. IR Image for VIN=24 V

50.0

52.0

54.0

56.0

58.0

60.0

62.0

64.0

66.0

68.0

70.0

72.0

74.0

20.42427.6

Temperat ure [℃]

Input Voltage, V in [V]

BoostPak (FDD850N10LD, Q11) = 61.5℃

Test Conditions

Connect the power resistor (85 Ω) to the CON2 and measure the saturated temperature.

Table 10. Test Result of V

= 55 V (35 W)

OUT

© 2013 Fairchild Semiconductor Corporation 21 FEBFDD850N10LD_CS001 • Rev. 1.0.0

9.6. EMI

Figure 29. Radiated Emissions: VIN=24 V

30 100050 100 500

10

60

20

30

40

50

Frequency

Level

[MHz]

[dB(uV/ m)]

― Vertical

― Horizontal

CISPR22 ClassB

Test Conditions

Frequency Sub-Range: 30 MHz ~ 1000 MHz
Load is five strings of LEDs.

© 2013 Fairchild Semiconductor Corporation 22 FEBFDD850N10LD_CS001 • Rev. 1.0.0

10. Revision History

Rev.

Date

Description

1.0.0

May 2013

Initial Release

WARNING AND DISCLAIMER

Replace components on the Evaluation Board only with those parts shown on the parts list (or Bill of Materials) in the Users’ Guide. Contact an
authorized Fairchild representative with any questions.

This board is intended to be used by certified professionals, in a lab environment, following proper safety procedures. Use at your own risk. The
Evaluation board (or kit) is for demonstration purposes only and neither the Board nor this User’s Guide constitute a sales contract or create any kind
of warranty, whether express or implied, as to the applications or products involved. Fairchild warrantees that its products meet Fairchild’s published
specifications, but does not guarantee that its products work in any specific application. Fairchild reserves the right to make changes without notice to
any products described herein to improve reliability, function, or design. Either the applicable sales contract signed by Fairchild and Buyer or, if no
contract exists, Fairchild’s standard Terms and Conditions on the back of Fairchild invoices, govern the terms of sale of the products described herein.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO

IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR
USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR
THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS

WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems which, (a)
are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing
counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation,
substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to
protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts
either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy
either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for
handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized
Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty
coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.

EXPORT COMPLIANCE STATEMENT

These commodities, technology, or software were exported from the United States in accordance with the Export Administration Regulations for the
ultimate destination listed on the commercial invoice. Diversion contrary to U.S. law is prohibited.

U.S. origin products and products made with U.S. origin technology are subject to U.S Re-export laws. In the event of re-export, the user will be
responsible to ensure the appropriate U.S. export regulations are followed.

2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.

© 2013 Fairchild Semiconductor Corporation 23 FEBFDD850N10LD_CS001 • Rev. 1.0.0

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

. ON Semiconductor reserves the right to make changes without further notice to any products herein.

PUBLICATION ORDERING INFORMATION

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