ON Semiconductor ESDM1051 User Manual

5.5V ESD Protection Diodes

Micro−packaged Diodes for ESD
Protection

ESDM1051

The ESDM1051 Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
smartphone, smart−watch, or many other portable / wearable
applications where board space comes at a premium.

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Features

• Low Capacitance (22 pF Typ, I/O to GND)

• Small Body Outline Dimensions − 01005 Size: 0.445 x 0.240 mm

• Protection for the Following IEC Standards:

IEC 61000−4−2 (Level 4)

• Low ESD Clamping Voltage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

Rating

Operating Junction Temperature Range T

Storage Temperature Range T

Lead Solder Temperature −
Maximum (10 Seconds)

ESDM1051:
IEC 61000−4−2 Contact
IEC 61000−4−2 Air

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

See Application Note AND8308/D for further description of
survivability specs.

= 25°C unless otherwise noted)

J

Symbol Value Unit

J

stg

T

L

ESD

−55 to +125 °C

−55 to +150 °C

260 °C

±30
±30

kV
kV

X4DFN2 (01005)

CASE 718AA

MARKING DIAGRAM

LM

L = Specific Device Code
M = Date Code

PIN CONFIGURATION

AND SCHEMATIC

12

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of
this data sheet.

© Semiconductor Components Industries, LLC, 2016

March, 2021 − Rev. 0

1 Publication Order Number:

ESDM1051/D

ESDM1051

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Working Voltage V

Breakdown Voltage V

Reverse Leakage Current I

Clamping Voltage
TLP (Note 1)

Symbol Conditions Min Ty p Max Unit

RWM

BR

R

V

= 25°C unless otherwise specified)

A

I/O Pin to GND 5.5 V

IT = 1 mA, I/O Pin to GND 6.1 6.8 8.2 V

V

= 5.5 V, I/O Pin to GND 0.1

RWM

IPP = 8 A IEC 61000−4−2 Level 2 equivalent

C

7.5

(±4 kV Contact, ±8 kV Air)

IPP = 16 A

IEC 61000−4−2 Level 2 equivalent

8.4

mA

V

(±8 kV Contact, ±16 kV Air)

Reverse Peak Pulse Current I

Clamping Voltage V

Dynamic Resistance R

Junction Capacitance C

PP

C

DYN

J

IEC61000−4−5 (8x20 ms)

IPP = 11 A, (8/20 ms pulse)

100 ns TLP Pulse 0.11

VR = 0 V, f = 1 MHz 22 25 pF

11 13 A

8.0 8.8 V

W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z

= 50 W, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.

0

ORDERING INFORMATION

Device Package Shipping

ESDM1051MX4T5G X4DFN2 (01005)

10,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2

ESDM1051

TYPICAL CHARACTERISTICS

30

25

20

15

10

Voltage (V)

5

0

−5

−10

−20

0 20 40 60 80 100 120 140

Time (ns)

Figure 1. ESD Clamping Voltage

Positive 8 kV Contact per IEC61000−4−2

20 10

18 9

16 8

14 7

12 6

(A)

10 5

TLP

I

84

63

42

21

0

0

1234567891011121314

V

(V)

CTLP

0

10

5

0

−5

−10

Voltage (V)

−15

−20

−25

−30

−20

0 20 40 60 80 100 120 140

Time (ns)

Figure 2. ESD Clamping Voltage

Negative 8 kV Contact per IEC61000−4−2

−20 10

−18 9

−16 8

−14 7

−12 6

(A)

−10 5

Eq (kV)

TLP

I

−84

IEC

V

−63

−42

−21

0

0

1234567891011121314

V

(V)

CTLP

Figure 3. Positive TLP I−V Curve Figure 4. Negative TLP I−V Curve

0

Eq (kV)

IEC

V

10

9

8

7

6

(A)

PK

5

@ I

4

C

V

3

2

1

0

0

2 4 6 8 10 12 14

135791113

IPK (A)

Figure 5. Positive Clamping Voltage vs. Peak

Pulse Current (tp = 8/20 ms)

10

9

8

7

6

(A)

PK

5

@ I

4

C

V

3

2

1

0

0

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3

2 4 6 8 10 12 14

135791113

IPK (A)

Figure 6. Negative Clamping Voltage vs. Peak

Pulse Current (tp = 8/20 ms)