ON Semiconductor ESD8011 User Manual
ESD8011
ESD Protection Diodes
Ultra Low Capacitance ESD Protection
Diode for High Speed Data Line
The ESD8011 ESD protection diodes are designed to protect high
speed data lines from ESD. Ultra−low capacitance and low ESD
clamping voltage make this device an ideal solution for protecting
voltage sensitive high speed data lines.
Features
• Ultra Low Capacitance (0.10 pF Typ, I/O to GND)
• Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
• Low ESD Clamping Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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X3DFN2
CASE 152AF
R = Specific Device Code
(Rotated 90° clockwise)
M = Date Code
MARKING
DIAGRAM
PIN 1
R
M
Typical Applications
• USB 3.x
• MHL 2.0
• SATA/SAS
• PCI Express
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Operating Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature −
Maximum (10 Seconds)
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
Maximum Peak Pulse Current
8/20 ms @ T
Maximum Peak Pulse Power
8/20 ms @ T
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= 25°C
A
= 25°C
A
= 25°C unless otherwise noted)
J
J
stg
T
L
ESD
ESD
I
pp
P
pk
−55 to +125 °C
−55 to +150 °C
260 °C
±20
±20
3.6 A
34 W
kV
kV
PIN CONFIGURATION
AND SCHEMATIC
12
=
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 4
1 Publication Order Number:
ESD8011/D
ESD8011
I
HOLD
I
I
PP
R
DYN
I
T
I
R
I
R
I
T
I
HOLD
−I
PP
DYN
V
)
HOLD
V
RWM
V
V
V
BR
C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
V
V
V
I
HOLD
R
RWM
HOLD
I
V
Working Peak Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
Holding Reverse Voltage
Holding Reverse Current
Dynamic Resistance
DYN
Maximum Peak Pulse Current
PP
Clamping Voltage @ I
C
VC = V
HOLD
+ (IPP * R
PP
DYN
T
)
ELECTRICAL CHARACTERISTICS (T
RWM
= 25°C unless otherwise specified)
A
V
BR
V
CVRWMVHOLD
VC = V
R
HOLD
DYN
+ (IPP * R
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
Breakdown Voltage V
Reverse Leakage Current I
Reverse Holding Voltage V
Holding Reverse Current I
Clamping Voltage
TLP (Note 2)
RWM
HOLD
HOLD
V
I/O Pin to GND 5.5 V
IT = 1 mA, I/O Pin to GND 6.5 7.3 V
BR
V
R
= 5.5 V, I/O Pin to GND 1.0
RWM
I/O Pin to GND 2.05 V
I/O Pin to GND 17 mA
IPP = 8 A IEC61000−4−2 Level 2 Equivalent
C
11.0
(±4 kV Contact, ±8 kV Air)
IPP = 16 A
IEC61000−4−2 Level 2 Equivalent
19.0
(±8 kV Contact, ±16 kV Air)
Dynamic Resistance R
Junction Capacitance C
Series Inductance L
DYN
Pin1 to Pin2
Pin2 to Pin1
VR = 0 V, f = 1 MHz 0.10 0.20 pF
J
VR = 0 V 0.3 nH
S
1.0
1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. For test procedure see Figure 5 and application note AND8307/D.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
= 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
0
mA
V
W
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ESD8011
TYPICAL CHARACTERISTICS
2
0
−2
−4
−6
(dB)
−8
−10
−12
−14
FREQUENCY (Hz)
Data Rate
Interface
USB 3.0 5 2.5 (m1) 7.5 (m2) m1 = 0.087
(Gb/s)
Fundamental Frequency
(GHz)
3rd Harmonic Frequency
(GHz)
m1
m2
3E10
1E101E91E81E7
ESD8011 Insertion Loss (dB)
m2 = 0.256
Figure 1. ESD8011 Insertion Loss
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