ON Semiconductor ESD7361, SZESD7361 User Manual

ESD7361, SZESD7361

f

ESD Protection Diode

Low Capacitance ESD Protection Diode
for High Speed Data Line

The ESD7361 Series ESD protection diodes are designed to protect
high speed data lines from ESD. Ultra−low capacitance make this
device an ideal solution for protecting voltage sensitive high speed
data lines.

Features

• Low Capacitance (0.55 pF Max, I/O to GND)

• Protection for the Following IEC Standards:

♦ IEC61000−4−2 (ESD): Level 4 ±15 kV Contact
♦ IEC61000−4−4 (EFT): 40 A −5/50 ns
♦ IEC61000−4−5 (Lightning): 1 A (8/20 ms)

• ISO 10605 (ESD) 330 pF/2 kW ±15 kV Contact

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

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MARKING

DIAGRAMS

2

1

1

2

SOD−323

CASE 477

SOD−523

CASE 502

SOD−923

CASE 514AB

7H

M

7X

M

12

2 M

Typical Applications

• Wireless Charger

• Near Field Communications

MAXIMUM RATINGS (T

Rating

Operating Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature −

Maximum (10 Seconds)
IEC 61000−4−2 Contact (ESD)

IEC 61000−4−2 Air (ESD)
ISO 10605 330 pF/2 kW Contact (ESD)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

= 25°C unless otherwise noted)

J

Symbol Value Unit

J

stg

T

L

ESD
ESD
ESD

−55 to +125 °C

−55 to +150 °C
260 °C

±15
±15
±15

kV
kV
kV

X, XX = Specific Device Code
M = Date Code

PIN CONFIGURATION

AND SCHEMATIC

1

Cathode

2

Anode

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 o
this data sheet.

© Semiconductor Components Industries, LLC, 2016

August, 2018 − Rev. 5

1 Publication Order Number:

ESD7361/D

ESD7361, SZESD7361

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

V

I

PP

V

RWM

I

V

I

Maximum Reverse Peak Pulse Current
Clamping Voltage @ I

C

Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

Test Current

T

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Parameter

PP

RWM

T

VCV

BR

V

RWM

I

I

F

I

V

R

F

I

T

I

PP

V

Uni−Directional

RWM

BR
R

C
C

J

DYN

= 25°C unless otherwise specified)

A

5 16 V
IT = 1 mA; pin 1 to pin 2 16.5 V
V

V

RWM
RWM

= 5.0 V
= 15 V

<1
20

1000

1000
IPP = 8 A 31 V
IPP = 16 A 34 V
VR = 0 V, f = 1 MHz

V

= 0 V, f < 1 GHz

R

0.55

0.55

TLP Pulse 0.735

0.01

f = 5 GHz

2

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Working Voltage V
Breakdown Voltage V
Reverse Leakage Current I

Clamping Voltage (Note 2) V
Clamping Voltage (Note 2) V
Junction Capacitance C

Dynamic Resistance R
Insertion Loss f = 1 MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. For test procedure see Figures 9 and 10 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z

= 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

0

Symbol Conditions Min Typ Max Unit

nA
nA

pF

W

dB

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

1.E−08

1.E−09

CURRENT (A)

1.E−10

1.E−11

1.E−12

1.E−13
0 5 10 15 20 25 30

1

0.8

0.6

0.4

CAPACITANCE (pF)

0.2

VOLTAGE (V)

0

04

8

61012

V

(V)

Bias

14 182

Figure 1. Typical IV Characteristics Figure 2. Typical CV Characteristics

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2

16

ESD7361, SZESD7361

1

0.5
0

−0.5

−1

−1.5

S21 (dB)

−2

−2.5

−3

−3.5

−4

1.E+07 1.E+08 1.E+09
FREQUENCY (Hz)

Figure 3. Typical Insertion Loss

ESD7361HT1G (SOD323)

1

0.5
0

−0.5

−1

−1.5

−2

S21 (dB)

−2.5

−3

−3.5

−4

1.E+07 1.E+08 1.E+09
FREQUENCY (Hz)

Figure 5. Typical Insertion Loss

ESD7361XV2T1G (SOD523)

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

CAPACITANCE (pF)

0.2

0.1
0

1.E+07 5.E+08 1.E+09 2.E+09 2.E+09 3.E+09

FREQUENCY (Hz)

Figure 4. Typical Capacitance Over Frequency

ESD7361HT1G (SOD323)

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

CAPACITANCE (pF)

0.2

0.1
0

1.E+07 1.E+09 2.E+09 3.E+09

FREQUENCY (Hz)

4.E+09

Figure 6. Typical Capacitance Over Frequency

ESD7361XV2T1G (SOD523)

−0.5

−1.5

S21 (dB)

−2.5

−3.5

1

0.5
0

−1

−2

−3

−4

1.E+07

1.E+08 1.E+09
FREQUENCY (Hz)

Figure 7. Typical Insertion Loss

ESD7361P2T5G (SOD923)

1

0.9

0.8

0.7

0.6

0.5

0.4

CURRENT (A)

0.3

0.2

0.1
0

1.E+07 1.E+09 2.E+09 3.E+09 4.E+09

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3

FREQUENCY (Hz)

Figure 8. Typical Capacitance Over Frequency

ESD7361P2T5G (SOD923)