ON Semiconductor ESD7351, SZESD7351 User Manual

ESD7351, SZESD7351
Series

ESD Protection Diode

The ESD7351 Series is designed to protect voltage sensitive
components that require ultra−low capacitance from ESD and
transient voltage events. Excellent clamping capability, low
capacitance, low leakage, and fast response time, make these parts
ideal for ESD protection on designs where board space is at a
premium. Because of its low capacitance, it is suited for use in high
frequency designs such as USB 2.0 high speed and antenna line
applications.

Features

• Low Capacitance (0.6 pF Max, I/O to GND)

• Low Clamping Voltage

• Stand−off Voltage: 3.3 V

• Low Leakage

• Response Time is < 1 ns

• Low Dynamic Resistance < 1 W

• IEC61000−4−2 Level 4 ESD Protection

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

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2

1

1

SOD−323

CASE 477

2

SOD−523

CASE 502

SOD−923

CASE 514AB

X, XX = Specific Device Code
M = Date Code

MARKING

DIAGRAMS

AF

M

AE

M

12

AD M

Typical Applications

• RF Signal ESD Protection

• RF Switching, PA, and Antenna ESD Protection

• Near Field Communications

MAXIMUM RATINGS

Rating Symbol Value Unit

IEC 61000−4−2 (ESD) Contact

Total Power Dissipation on FR−5 Board
(Note 1) @ T

Junction and Storage Temperature Range TJ, T

Lead Solder Temperature − Maximum
(10 Second Duration)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

= 25°C

A

Air

°PD° 150 mW

stg

T

L

See Application Note AND8308/D for further description of survivability specs.

±20
±20

−55 to +150 °C

260 °C

kV

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

PIN CONFIGURATION

AND SCHEMATIC

1

Cathode

ORDERING INFORMATION

2

Anode

© Semiconductor Components Industries, LLC, 2014

November, 2018 − Rev. 5

1 Publication Order Number:

ESD7351/D

ESD7351, SZESD7351 Series

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

V

I

PP

V

RWM

I

V

I

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

C

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

Test Current

T

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Parameter

PP

RWM

T

VCV

BR

V

RWM

I

I

F

I

V

R

F

I

T

I

PP

V

Uni−Directional

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Working Voltage V

Breakdown Voltage (Note 2) V

Reverse Leakage Current I

Clamping Voltage (Note 3) V

Clamping Voltage (Note 3) V

Junction Capacitance C

Dynamic Resistance R

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Breakdown voltage is tested from pin 1 to 2.

3. Non−repetitive current pulse at T

Symbol Conditions Min Typ Max Unit

A

= 25°C unless otherwise specified)

A

RWM

IT = 1 mA 5.0 V

BR

V

R

C

C

J

DYN

= 25°C, per IEC61000−4−5 waveform.

= 3.3 V < 1.0 50 nA

RWM

IPP = 1 A 8.0 V

IPP = 3 A 10 V

VR = 0 V, f = 1 MHz
V

= 0 V, f < 1 GHz

R

TLP Pulse 0.35

0.43

0.43

3.3 V

0.6

0.6

pF

W

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2

ESD7351, SZESD7351 Series

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

I (A)

1.E−08

1.E−09

1.E−10

1.E−11

1.E−12

dB

−10

−12

−14

012345678

V (V)

Figure 1. IV Characteristics Figure 2. CV Characteristics

2

0

−2

−4

−6

−8

1.E+08 1.E+09 1.E+10

TBD

FREQUENCY (Hz)

Figure 3. RF Insertion Loss Figure 4. Capacitance over Frequency

1.0

0.8

0.6

0.4

CAPACITANCE (pF)

0.2

0

0 0.5 1 1.5 2 2.5 3 3.5

VBias (V)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

CAPACITANCE (pF)

0.4

0.2

0.0

0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5

FREQUENCY (GHz)

16

14

12

10

8

6

TLP CURRENT (A)

4

2

0

02468101214161820

VC, VOLTAGE (V)

Figure 5. Positive TLP I−V Curve

NOTE: TLP parameter: Z0 = 50 W, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns. V

stress level calculated at the secondary peak of the IEC 61000−4−2 waveform at t = 30 ns with 2 A/kV. See TLP description
below for more information.

8

−14

6

−12

(kV)

−10

IEC

4

−8

−6

TLP CURRENT (A)

2

−4

EQUIVALENT V

−2

0

0

02468101214161820

VC, VOLTAGE (V)

Figure 6. Negative TLP I−V Curve

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3

is the equivalent voltage

IEC

8−16

6

4

2

0

(kV)

IEC

EQUIVALENT V