ON Semiconductor ESD7321 User Manual

ESD7321

s

ESD Protection Diodes

Low Capacitance ESD Protection Diode
for High Speed Data Lines

The ESD7321 ESD protection diodes are designed to protect high
speed data lines from ESD. Low capacitance and low ESD clamping
voltage make this device an ideal solution for protecting voltage
sensitive high speed data lines.

Features

• Low Capacitance (0.5 pF Max, I/O to GND)

• Protection for the Following IEC Standards:

IEC 61000−4−2 (Level 4)

• Low ESD Clamping Voltage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• USB 3.x

• MHL 2.0

• SATA/SAS

• PCI Express

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Operating Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature −

Maximum (10 Second Duration)
IEC 61000−4−2 Contact (ESD)

IEC 61000−4−2 Air (ESD)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

= 25°C unless otherwise noted)

J

−55 to +125 °C

J

−55 to +150 °C

stg

T

L

ESD
ESD

260 °C

±15
±15

kV
kV

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MARKING
DIAGRAM

PIN 1

X3DFN2

CASE 152AF

T = Specific Device Code

(Rotated 90° clockwise)

M = Date Code

T

M

PIN CONFIGURATION

AND SCHEMATIC

12

ORDERING INFORMATION

Device Package Shipping

ESD7321MUT5G X3DFN2

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

10000 / Tape &

Reel

†

© Semiconductor Components Industries, LLC, 2016

May, 2016 − Rev. 2

1 Publication Order Number:

ESD7321/D

ESD7321

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

V

I

PP

V

RWM

I

V

I

Maximum Reverse Peak Pulse Current
Clamping Voltage @ I

C

Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

Test Current

T

*See Application Note AND8308/D for detailed explanations of

Parameter

PP

RWM

T

BR

V

RWM

VCV

Bi−Directional ESD

I

I

PP

I

T

I

R

I

V

RWM

V

R

I

T

I

PP

BR

V

V

C

datasheet parameters.

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Parameter Symbol Condition Min Typ Max Unit

Reverse Working Voltage V
Breakdown Voltage V
Reverse Leakage Current I
Clamping Voltage V

ESD Clamping Voltage V
Junction Capacitance C
Dynamic Resistance R

RWM

BR
R

C

C

J

DYN

IT = 1 mA (Note 1) 8.0 V
V

= 7.0 V, I/O to GND 200 nA

RWM

IPP = 8 A − (IEC61000−4−2 Level 2 Equivalent

18 V

(±4 kV Contact, ±8 kV Air))
Per IEC 61000−4−2 See Figures 1 and 2
VR = 0 V, f = 1 MHz 0.5 pF
TLP Pulse 1

7.0 V

W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

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2

ESD7321

TYPICAL CHARACTERISTICS

Figure 3. IV Characteristics Figure 4. CV Characteristics

20
18
16
14
12
10

8

CURRENT (A)

6
4
2

0

0 5 10 15 20 25 30

VOLTAGE (V) VOLTAGE (V)

Figure 5. Positive TLP I−V Curve Figure 6. Negative TLP I−V Curve

0

−2

−4

−6

−8

−10

−12

CURRENT (A)

−14

−16

−18

−20

−30 −25 −20 −15 −10 −5 0

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3

ESD7321

IEC 61000−4−2 Spec.

Test Volt-

Level

age (kV)

1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8

First Peak

Current

(A)

Current at

30 ns (A)

Current at

60 ns (A)

Figure 7. IEC61000−4−2 Spec

Transmission Line Pulse (TLP) Measurement

Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 8. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 9 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.

IEC61000−4−2 Waveform

I

peak

100%

90%

I @ 30 ns

I @ 60 ns

10%

tP = 0.7 ns to 1 ns

L

Attenuator

S

50 W Coax

÷

50 W Coax

Cable

10 MW

V

C

Figure 8. Simplified Schematic of a Typical TLP

System

I

M

V

M

Oscilloscope

Cable

DUT

Figure 9. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms

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4

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

X3DFN2, 0.62x0.32, 0.355P, (0201)

SCALE 8:1

A1

2

A B

2X

E

A

C

b

0.05 BC

SEATING
PLANE

M

INDICATOR

(OPTIONAL)

2X

0.05 BC

PIN 1

0.05 C

0.05 C

L22X

M

A

BOTTOM VIEW

D

TOP VIEW

SIDE VIEW

e

1

CASE 152AF

ISSUE A

A

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

MILLIMETERS

DIM MIN MAX

A 0.25 0.33

A1 −−− 0.05

b 0.22 0.28
D 0.58 0.66
E 0.28 0.36
e 0.355 BSC

L2 0.17 0.23

GENERIC

MARKING DIAGRAM*

PIN 1

XM

X = Specific Device Code
M = Date Code

RECOMMENDED

MOUNTING FOOTPRINT*

0.74

2X

0.30

DATE 17 FEB 2015

DOCUMENT NUMBER:

DESCRIPTION:

*For additional information on our Pb−Free strategy and soldering

98AON56472E

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

X3DFN2, 0.62X0.32, 0.355P, (0201)

1

2X

0.31

DIMENSIONS: MILLIMETERS

See Application Note AND8398/D for more mounting details

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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