ON Semiconductor ESD7321 User Manual
ESD7321
s
ESD Protection Diodes
Low Capacitance ESD Protection Diode
for High Speed Data Lines
The ESD7321 ESD protection diodes are designed to protect high
speed data lines from ESD. Low capacitance and low ESD clamping
voltage make this device an ideal solution for protecting voltage
sensitive high speed data lines.
Features
• Low Capacitance (0.5 pF Max, I/O to GND)
• Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
• Low ESD Clamping Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• USB 3.x
• MHL 2.0
• SATA/SAS
• PCI Express
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Operating Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature −
Maximum (10 Second Duration)
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= 25°C unless otherwise noted)
J
−55 to +125 °C
J
−55 to +150 °C
stg
T
L
ESD
ESD
260 °C
±15
±15
kV
kV
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MARKING
DIAGRAM
PIN 1
X3DFN2
CASE 152AF
T = Specific Device Code
(Rotated 90° clockwise)
M = Date Code
T
M
PIN CONFIGURATION
AND SCHEMATIC
12
ORDERING INFORMATION
Device Package Shipping
ESD7321MUT5G X3DFN2
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
10000 / Tape &
Reel
†
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 2
1 Publication Order Number:
ESD7321/D
ESD7321
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
V
I
PP
V
RWM
I
V
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
C
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
Test Current
T
*See Application Note AND8308/D for detailed explanations of
Parameter
PP
RWM
T
BR
V
RWM
VCV
Bi−Directional ESD
I
I
PP
I
T
I
R
I
V
RWM
V
R
I
T
I
PP
BR
V
V
C
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Parameter Symbol Condition Min Typ Max Unit
Reverse Working Voltage V
Breakdown Voltage V
Reverse Leakage Current I
Clamping Voltage V
ESD Clamping Voltage V
Junction Capacitance C
Dynamic Resistance R
RWM
BR
R
C
C
J
DYN
IT = 1 mA (Note 1) 8.0 V
V
= 7.0 V, I/O to GND 200 nA
RWM
IPP = 8 A − (IEC61000−4−2 Level 2 Equivalent
18 V
(±4 kV Contact, ±8 kV Air))
Per IEC 61000−4−2 See Figures 1 and 2
VR = 0 V, f = 1 MHz 0.5 pF
TLP Pulse 1
7.0 V
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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2
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