ON Semiconductor ESD7205 User Manual

ESD7205

ESD Protection Diode

Low Capacitance ESD Protection Diodes
for High Speed Data Line

The ESD7205 ESD protection diode array is designed to protect
high speed data lines from ESD. Ultra−low capacitance and low ESD
clamping voltage make this device an ideal solution for protecting
voltage sensitive high speed data lines. The small form factor,
flow−through style package allows for easy PCB layout and matched
trace lengths necessary to maintain consistent impedance between
high speed differential lines such as Ethernet and LVDS present in
automotive camera modules.

Features

• Low Capacitance (0.4 pF Typical, I/O to GND)

• Diode capacitance matching

• Protection for the Following IEC Standards:

IEC 61000−4−2 Level 4 (ESD)

• Low ESD Clamping Voltage (12 V Typical, +16 A TLP, I/O to GND)

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• 100BASE−T1 / OPEN Alliance BroadR−Reach Automotive Ethernet

• 10/100/1000BASE−T1 Ethernet

• LVDS

• Automotive USB 2.0/3.0

• High Speed Differential Pairs

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MARKING

DIAGRAMS

SOT−723

CASE 631AA

EA = Specific Device Code
M = Date Code

SC−70

CASE 419

EC = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

PIN CONFIGURATION

AND SCHEMATIC

Pin 1 Pin 2

EA M

1

ECMG

1

G

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Operating Junction Temperature Range T

Storage Temperature Range T

Lead Solder Temperature −
Maximum (10 Seconds)

IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ISO 10605 330 pF / 330 W Contact
ISO 10605 330 pF / 2 kW Contact
ISO 10605 150 pF / 2 kW Contact

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

© Semiconductor Components Industries, LLC, 2016

January, 2019 − Rev. 6

= 25°C unless otherwise noted)

J

J

stg

T

L

ESD ±25

−55 to +150 °C

−55 to +150 °C

260 °C

kV

±25
±20
±30
±30

1 Publication Order Number:

Pin 3

=

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.

ESD7205/D

ESD7205

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

V

I

PP

V

RWM

I

V

I

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

C

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

Test Current

T

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Parameter

PP

RWM

T

VCV

BR

V

RWM

I

I

F

I

V

R

F

I

T

I

PP

Uni−Directional

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Working
Voltage

Breakdown Voltage V

Reverse Leakage
Current

Clamping Voltage
(Note 1)

Clamping Voltage TLP
(Note 2)

Junction Capacitance
Match

Junction Capacitance C

3dB Bandwidth f

1. For test procedure see Figures 5 and 6 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z

0

Symbol Conditions Min Typ Max Unit

V

RWM

BR

I

R

V

C

V

C

DC

J

J

BW

= 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

= 25°C unless otherwise specified)

A

I/O Pin to GND 5.0 V

I

= 1 mA, I/O Pin to GND 5.2 6.0 8.0 V

T

V

= 5.0 V, I/O Pin to GND 1

RWM

IEC61000−4−2, ±8 kV Contact See Figures 3 and 4

IPP = 8 A

I

= 16 A

PP

= −8 A

I

PP

IPP = −16 A

VR = 0 V, f = 1 MHz between I/O1 to GND and I/O

2 to GND

VR = 0 V, f = 1 MHz between I/O Pins and GND

ESD7205DT5G

ESD7205WTT1G

VR = 0 V, f = 1 MHz between I/O Pins

ESD7205DT5G

ESD7205WTT1G

RL = 50 W

12.5

−4.0

−8.0

0.34

0.47

0.20

0.23

V

mA

10

5 10 %

pF

0.55

0.85

0.35

0.40

5 GHz

V

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2

ESD7205

1.E−02

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

I (A)

1.E−08

1.E−09

1.E−10

1.E−11

1.E−12

−10 1 2 3 4 5 6 7

−2104

V (V)

1.0

0.9

0.8

0.7

0.6

0.5

C (pF)

0.4

0.3

0.2

0.1

I/O−GND

0

0123 589

VBias (V)

Figure 1. IV Characteristics Figure 2. CV Characteristics

90

80

70

60

50

40

30

VOLTAGE (V)

20

10

0

−10

−20

0

20 40 60 80 100 120 140

TIME (ns)

Figure 3. IEC61000−4−2 +8 kV Contact ESD

Clamping Voltage

10

0

−10

−20

−30

−40

−50

VOLTAGE (V)

−60

−70

−80

−90

−20

0 20 40 80 120 140

TIME (ns)

10060

Figure 4. IEC61000−4−2 −8 kV Contact ESD

Clamping Voltage

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