ON Semiconductor ESD5581 User Manual

ESD5581

s

ESD Protection Diode

Micro−Packaged Diodes for ESD Protection

The ESD5581 is designed to protect voltage sensitive components
that require low capacitance from ESD and transient voltage events.
Excellent clamping capability, low capacitance, low leakage, and fast
response time, make these parts ideal for ESD protection on designs
where board space is at a premium.

www.onsemi.com

Features

• Low Clamping Voltage

• Small Body Outline Dimensions: 0.62 mm x 0.32 mm

• Low Body Height: 0.3 mm

• Stand−off Voltage: 5 V

• IEC61000−4−2 Level 4 ESD Protection

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• mSD Card Protection

• Audio Line Protection

• GPIO

MAXIMUM RATINGS

Rating Symbol Value Unit

IEC 61000−4−2 (ESD) Contact

Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range TJ, T
Lead Solder Temperature − Maximum

(10 Second Duration)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

Air

°P

R

°

D

q

JA

stg

T

L

±30
±30

250
400

−55 to +150 °C
260 °C

kV

mW

°C/W

1

X3DFN2

CASE 152AF

5 = Specific Device Code
M = Date Code

X2DFN2

CASE 714AB

YC = Specific Device Code
M = Date Code

ORDERING INFORMATION

Device Package Shipping

ESD5581MXT5G X3DFN2

(Pb−Free)

ESD5581N2T5G X2DFN2

(Pb−Free)

2

MARKING
DIAGRAM

PIN 1

5

M

YC M

10000 / Tape &

Reel

8000 / Tape &

Reel

†

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

See Application Note AND8308/D for further description of survivability specs.

© Semiconductor Components Industries, LLC, 2017

September, 2018 − Rev. 8

1 Publication Order Number:

ESD5581/D

ESD5581

VOLTAGE (V)

60

10

0

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

V

I

PP

V

RWM

I

V

I

Maximum Reverse Peak Pulse Current
Clamping Voltage @ I

C

Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

Test Current

T

*See Application Note AND8308/D for detailed explanations of

Parameter

PP

RWM

T

VCV

V

RWM

BR

Bi−Directional

I

I

PP

I

T

I

R

I

V

RWM

V

R

I

T

I

PP

BR

V

V

C

datasheet parameters.

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Working Voltage V
Breakdown Voltage (Note 2) V
Reverse Leakage Current I
Clamping Voltage (Note 3) V
Clamping Voltage (Note 3) V
Clamping Voltage (Note 3) V
Clamping Voltage (Note 4) V
Peak Pulse Current (Note 3) I
Clamping Voltage

TLP (Note 5)
Dynamic Resistance R

Junction Capacitance C

Symbol Conditions Min Typ Max Unit

RWM

BR
R

PP

V

DYN

= 25°C unless otherwise specified)

A

IT = 1 mA 5.2 6.2 7.5 V
V

= 5 V 0.1

RWM

IPP = 1 A 8.0 V

C

IPP = 4 A 10 V

C

IPP = 6 A 10.3 12 V

C

IEC61000−4−2, ±8 kV Contact See Figures 1 & 2 V

C

6.0 A
11 V

C

tP = 8/20 ms

IPP = 16 A

IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)

TLP Pulse 0.22
VR = 0 V, f = 1 MHz 10 pF

J

5.0 V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.

3. Non−repetitive current pulse at T

4. For test procedure see Figure 10 and application note AND8307/D.

= 25°C, per IEC61000−4−5 waveform. (See Figure 12)

A

5. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z

= 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

0

TYPICAL CHARACTERISTICS

mA

W

40

30

20

10

0

−10

−20 0 20 40 60 80 10050120 140
TIME (ns)

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

www.onsemi.com

−10

−20

−30

VOLTAGE (V)

−40

−50

−60

−20 0 20 40 60 80 1000120 14
TIME (ns)

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

2

ESD5581

TYPICAL CHARACTERISTICS

1.E−02

1.E−03

1.E−04

1.E−05

1.E−06

I1 (A)

1.E−07

1.E−08

1.E−09

1.E−10

1.E−11

−8 −6 −4 −2 0 2 4
V1 (V)

Figure 3. IV Characteristics Figure 4. CV Characteristics

16
14
12
10

9
8
7
6
5
4

C (pF)

3
2
1
0

−5 −4 −3 −2 −1 0 1 2 368 45
VBias (V)

8
6

CAPACITANCE (pF)

4
2
0

0.00 0.25 0.50 0.75 1.00 1.25 1.50
FREQUENCY (GHz)

Figure 5. Capacitance over Frequency

20
18
16
14
12
10

8
6

TLP CURRENT (A)

4
2
0

048121620

2 6 10 14 18 0 4 8 12 16 202 6 10 14 18

VC, VOLTAGE (V)

Figure 6. Positive TLP I−V Curve Figure 7. Negative TLP I−V Curve

−20

−18

−16

−14

−12

−10

−8

−6

TLP CURRENT (A)

−4

−2
0

1.75 2.00

VC, VOLTAGE (V)

www.onsemi.com

3

ESD5581

TYPICAL CHARACTERISTICS

12

10

8

(V)

PK

6

@ I

C

V

4

2

0

0246135 87

IPK (A)

Figure 8. Pin 1−2 Clamping Voltage vs. Peak

Pulse Current (t

= 8/20 ms)

p

12

10

8

(V)

PK

6

@ I

C

V

4

2

0

0246135 87

IPK (A)

Figure 9. Pin 2−1 Clamping Voltage vs. Peak

Pulse Current (tp = 8/20 ms)

www.onsemi.com

4

ESD5581

IEC 61000−4−2 Spec.

Test Volt-

Level

age (kV)

1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8

First Peak

Current

(A)

Current at

30 ns (A)

ESD Gun

50 W

Cable

IEC61000−4−2 Waveform

I

peak

Current at

60 ns (A)

100%

90%

I @ 30 ns

I @ 60 ns

10%

Figure 10. IEC61000−4−2 Spec

Oscilloscope

50 W

tP = 0.7 ns to 1 ns

Figure 11. Diagram of ESD Test Setup

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage

100

t

r

90
80
70
60
50
40
30
20

% OF PEAK PULSE CURRENT

10

0

020406080

PEAK VALUE I

t

P

Figure 12. 8 X 20 ms Pulse Waveform

at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.

@ 8 ms

RSM

PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms

HALF VALUE I

t, TIME (ms)

RSM

/2 @ 20 ms

www.onsemi.com

5

ESD5581

Transmission Line Pulse (TLP) Measurement

Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 13. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 14 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP requirements, and how to interrupt them, please
refer to AND9007/D.

L

Attenuator

S

50 W Coax

Cable

÷

50 W Coax

Cable

Figure 13. Simplified Schematic of a Typical TLP

10 MW

V

C

System

I

M

V

M

Oscilloscope

DUT

Figure 14. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms

www.onsemi.com

6

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

X3DFN2, 0.62x0.32, 0.355P, (0201)

SCALE 8:1

A1

2

A B

2X

E

A

C

b

0.05 BC

SEATING
PLANE

M

INDICATOR

(OPTIONAL)

2X

0.05 BC

PIN 1

0.05 C

0.05 C

L22X

M

A

BOTTOM VIEW

D

TOP VIEW

SIDE VIEW

e

1

CASE 152AF

ISSUE A

A

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

MILLIMETERS

DIM MIN MAX

A 0.25 0.33

A1 −−− 0.05

b 0.22 0.28
D 0.58 0.66
E 0.28 0.36
e 0.355 BSC

L2 0.17 0.23

GENERIC

MARKING DIAGRAM*

PIN 1

XM

X = Specific Device Code
M = Date Code

RECOMMENDED

MOUNTING FOOTPRINT*

0.74

2X

0.30

DATE 17 FEB 2015

DOCUMENT NUMBER:

DESCRIPTION:

*For additional information on our Pb−Free strategy and soldering

98AON56472E

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

X3DFN2, 0.62X0.32, 0.355P, (0201)

1

2X

0.31

DIMENSIONS: MILLIMETERS

See Application Note AND8398/D for more mounting details

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 8:1

X2DFN2 1.0x0.6, 0.65P

CASE 714AB

ISSUE B

DATE 21 NOV 2017

0.10 C

PIN 1
INDICATOR

0.10 C

0.10 C

D

TOP VIEW

NOTE 3

A1

SIDE VIEW

e

e/2

1

BOTTOM VIEW

A B

E

b

2X

L

0.05

A

SEATING

C

PLANE

M

0.05 BC

M

0.05 BC

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. EXPOSED COPPER ALLOWED AS SHOWN.

MILLIMETERS

DIM MIN NOM

C

A 0.34 0.37

A1 −−− 0.03

b 0.45 0.50
D

0.95 1.00

E

0.55 0.60

e 0.65 BSC
L 0.20 0.25

MAX

0.40

0.05

0.55

1.05

0.65

0.30

GENERIC

MARKING DIAGRAM*

XX M

XX = Specific Device Code

A

M = Date Code

RECOMMENDED

SOLDER FOOTPRINT*

A

2X

0.47

PIN 1

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.

1.20

2X

0.60

DIMENSIONS: MILLIMETERS

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019

98AON98172F

X2DFN2 1.0X0.6, 0.65P

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

. ON Semiconductor reserves the right to make changes without further notice to any products herein.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
Email Requests to: [e-mail]

ON Semiconductor Website: www.onsemi.com

TECHNICAL SUPPORT
North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: [phone]

Europe, Middle East and Africa Technical Support:

Phone: [phone]
For additional information, please contact your local Sales Representative

◊

www.onsemi.com

1