ON Semiconductor ESD5581 User Manual

ESD5581

s

ESD Protection Diode

Micro−Packaged Diodes for ESD Protection

The ESD5581 is designed to protect voltage sensitive components
that require low capacitance from ESD and transient voltage events.
Excellent clamping capability, low capacitance, low leakage, and fast
response time, make these parts ideal for ESD protection on designs
where board space is at a premium.

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Features

• Low Clamping Voltage

• Small Body Outline Dimensions: 0.62 mm x 0.32 mm

• Low Body Height: 0.3 mm

• Stand−off Voltage: 5 V

• IEC61000−4−2 Level 4 ESD Protection

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• mSD Card Protection

• Audio Line Protection

• GPIO

MAXIMUM RATINGS

Rating Symbol Value Unit

IEC 61000−4−2 (ESD) Contact

Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range TJ, T
Lead Solder Temperature − Maximum

(10 Second Duration)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

Air

°P

R

°

D

q

JA

stg

T

L

±30
±30

250
400

−55 to +150 °C
260 °C

kV

mW

°C/W

1

X3DFN2

CASE 152AF

5 = Specific Device Code
M = Date Code

X2DFN2

CASE 714AB

YC = Specific Device Code
M = Date Code

ORDERING INFORMATION

Device Package Shipping

ESD5581MXT5G X3DFN2

(Pb−Free)

ESD5581N2T5G X2DFN2

(Pb−Free)

2

MARKING
DIAGRAM

PIN 1

5

M

YC M

10000 / Tape &

Reel

8000 / Tape &

Reel

†

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

See Application Note AND8308/D for further description of survivability specs.

© Semiconductor Components Industries, LLC, 2017

September, 2018 − Rev. 8

1 Publication Order Number:

ESD5581/D

ESD5581

VOLTAGE (V)

60

10

0

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

V

I

PP

V

RWM

I

V

I

Maximum Reverse Peak Pulse Current
Clamping Voltage @ I

C

Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

Test Current

T

*See Application Note AND8308/D for detailed explanations of

Parameter

PP

RWM

T

VCV

V

RWM

BR

Bi−Directional

I

I

PP

I

T

I

R

I

V

RWM

V

R

I

T

I

PP

BR

V

V

C

datasheet parameters.

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Working Voltage V
Breakdown Voltage (Note 2) V
Reverse Leakage Current I
Clamping Voltage (Note 3) V
Clamping Voltage (Note 3) V
Clamping Voltage (Note 3) V
Clamping Voltage (Note 4) V
Peak Pulse Current (Note 3) I
Clamping Voltage

TLP (Note 5)
Dynamic Resistance R

Junction Capacitance C

Symbol Conditions Min Typ Max Unit

RWM

BR
R

PP

V

DYN

= 25°C unless otherwise specified)

A

IT = 1 mA 5.2 6.2 7.5 V
V

= 5 V 0.1

RWM

IPP = 1 A 8.0 V

C

IPP = 4 A 10 V

C

IPP = 6 A 10.3 12 V

C

IEC61000−4−2, ±8 kV Contact See Figures 1 & 2 V

C

6.0 A
11 V

C

tP = 8/20 ms

IPP = 16 A

IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)

TLP Pulse 0.22
VR = 0 V, f = 1 MHz 10 pF

J

5.0 V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.

3. Non−repetitive current pulse at T

4. For test procedure see Figure 10 and application note AND8307/D.

= 25°C, per IEC61000−4−5 waveform. (See Figure 12)

A

5. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z

= 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

0

TYPICAL CHARACTERISTICS

mA

W

40

30

20

10

0

−10

−20 0 20 40 60 80 10050120 140
TIME (ns)

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

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−10

−20

−30

VOLTAGE (V)

−40

−50

−60

−20 0 20 40 60 80 1000120 14
TIME (ns)

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

2

ESD5581

TYPICAL CHARACTERISTICS

1.E−02

1.E−03

1.E−04

1.E−05

1.E−06

I1 (A)

1.E−07

1.E−08

1.E−09

1.E−10

1.E−11

−8 −6 −4 −2 0 2 4
V1 (V)

Figure 3. IV Characteristics Figure 4. CV Characteristics

16
14
12
10

9
8
7
6
5
4

C (pF)

3
2
1
0

−5 −4 −3 −2 −1 0 1 2 368 45
VBias (V)

8
6

CAPACITANCE (pF)

4
2
0

0.00 0.25 0.50 0.75 1.00 1.25 1.50
FREQUENCY (GHz)

Figure 5. Capacitance over Frequency

20
18
16
14
12
10

8
6

TLP CURRENT (A)

4
2
0

048121620

2 6 10 14 18 0 4 8 12 16 202 6 10 14 18

VC, VOLTAGE (V)

Figure 6. Positive TLP I−V Curve Figure 7. Negative TLP I−V Curve

−20

−18

−16

−14

−12

−10

−8

−6

TLP CURRENT (A)

−4

−2
0

1.75 2.00

VC, VOLTAGE (V)

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