ESD5004
ESD Protection Diode
Low Capacitance ESD Protection Diode
The ESD5004 is designed for applications requiring ESD
protection. It is intended to be used in sensitive equipment such as
smartphone, wireless headsets, digital cameras, computers, printers,
communication systems, and other applications. The integrated design
provides very effective and reliable protection for four separate lines
using only one package. This device is ideal for situations where board
space is at a premium.
Features
• Low Capacitance (5 pF Max, I/O to GND)
• Four Separate Bi−directional Configurations for Protection
• Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
• Low ESD Clamping Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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onsemi.com
MARKING
DIAGRAM
X3DFN4
CASE 714AA
4 = Specific Device Code
M = Date Code
PIN CONFIGURATION
AND SCHEMATIC
4M
Typical Applications
• Smartphone and Portable Electronics
• Notebooks, Desktops, Servers
• Microprocessor Based Equipment
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Operating Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature −
Maximum (10 Seconds)
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= 25°C unless otherwise noted)
J
J
stg
T
L
ESD
ESD
−55 to +125 °C
−65 to +150 °C
260 °C
±12
±15
kV
kV
2
5
1
(Bottom View)
1234
5
3
4
ORDERING INFORMATION
Device Package Shipping
ESD5004MXTBG X3DFN4
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8000 /
Tape & Reel
†
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2015
April, 2017 − Rev. 3
1 Publication Order Number:
ESD5004/D
ESD5004
ELECTRICAL CHARACTERISTICS (T
Parameter
Reverse Working Voltage V
Breakdown Voltage V
Reverse Leakage Current I
Clamping Voltage V
Clamping Voltage
TLP (Note 1)
See Figures 4 and 5
Junction Capacitance C
Symbol Conditions Min Typ Max Unit
RWM
BRIT
R
C
V
C
J
= 25°C unless otherwise specified)
A
I/O Pin to GND 3.3 V
= 1 mA, I/O Pin to GND 3.9 V
V
= 3.3 V, I/O Pin to GND 1.0
RWM
8 x 20 ms, Ipp = 1 A
IPP = 16 A
= −16 A
I
PP
IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)
5.0 9.1 V
10
4.5
VR = 0 V, f = 1 MHz between I/O Pins and GND 3.5 5.0 pF
mA
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
IEC 61000−4−2 Spec.
Test Volt-
Level
age (kV)
= 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
0
IEC61000−4−2 Waveform
I
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
peak
100%
90%
1 2 7.5 4 2
2 4 15 8 4
I @ 30 ns
3 6 22.5 12 6
4 8 30 16 8
I @ 60 ns
10%
Figure 1. IEC61000−4−2 Spec
tP = 0.7 ns to 1 ns
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2
ESD5004
TYPICAL CHARACTERISTICS
45
40
35
30
25
20
15
VOLTAGE (V)
10
5
0
−5
TIME (ns)
120
10080 1406040200−20
Figure 2. IEC61000−4−2 +8 kV Contact ESD
Clamping Voltage
20
18
16
14
12
10
8
6
TLP CURRENT (A)
4
2
00
0201816142468 1210
VC, VOLTAGE (V)
10 10
8
6
4
2
5
0
−5
−10
−15
−20
−25
VOLTAGE (V)
−30
−35
−40
−45
Figure 3. IEC61000−4−2 −8 kV Contact ESD
−20
−18
−16
−14
(kV)
IEC
−12
−10
−8
−6
TLP CURRENT (A)
−4
EQUIVALENT V
−2
0
0201816142468 1210
TIME (ns)
Clamping Voltage
V
, VOLTAGE (V)
C
Figure 4. Positive TLP I−V Curve Figure 5. Negative TLP I−V Curve
10080 1406040200−20
120
8
(kV)
IEC
6
4
2
EQUIVALENT V
0
4.0
3.5
3.0
2.5
2.0
C (pF)
1.5
1.0
0.5
I/O−GND
0
3.02.5 3.52.01.51.00.50
VR, VOLTAGE (V)
Figure 6. CV Characteristics
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3
ESD5004
Transmission Line Pulse (TLP) Measurement
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 7. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 8 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
L
Attenuator
S
50 W Coax
Cable
÷
50 W Coax
Cable
Figure 7. Simplified Schematic of a Typical TLP
10 MW
V
C
System
I
M
V
M
Oscilloscope
DUT
Figure 8. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 8:1
X3DFN4 0.525x0.925, 0.3P
CASE 714AA
ISSUE B
DATE 08 DEC 2014
2X
2X
PIN ONE
REFERENCE
0.05 C
0.05
0.05 C
0.05 C
NOTE 3
D
C
TOP VIEW
A1
SIDE VIEW
L2
1
2
43
e
BOTTOM VIEW
e/2
A B
5X
b
E
A
SEATING
C
PLANE
M
0.07 BC
4X
L
A
NOTE 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
MILLIMETERS
DIM MIN MAX
A 0.24 0.32
A1 0.00 0.05
b 0.12 0.18
D 0.525 BSC
E 0.925 BSC
e 0.30 BSC
L 0.173 0.233
L2 0.42 0.48
GENERIC
MARKING DIAGRAM*
XM
X = Specific Device Code
M = Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
RECOMMENDED
SOLDER FOOTPRINT*
0.66
5X
0.18
4X
0.38
1.08
1
0.30
DIMENSIONS: MILLIMETERS
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON89145F
X3DFN4 0.525X0.925, 0.3P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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