ON Semiconductor ESD5004 User Manual

ESD5004

ESD Protection Diode

Low Capacitance ESD Protection Diode

The ESD5004 is designed for applications requiring ESD
protection. It is intended to be used in sensitive equipment such as
smartphone, wireless headsets, digital cameras, computers, printers,
communication systems, and other applications. The integrated design
provides very effective and reliable protection for four separate lines
using only one package. This device is ideal for situations where board
space is at a premium.

Features

• Low Capacitance (5 pF Max, I/O to GND)

• Four Separate Bi−directional Configurations for Protection

• Protection for the Following IEC Standards:

IEC 61000−4−2 (Level 4)

• Low ESD Clamping Voltage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

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onsemi.com

MARKING
DIAGRAM

X3DFN4

CASE 714AA

4 = Specific Device Code
M = Date Code

PIN CONFIGURATION

AND SCHEMATIC

4M

Typical Applications

• Smartphone and Portable Electronics

• Notebooks, Desktops, Servers

• Microprocessor Based Equipment

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Operating Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature −

Maximum (10 Seconds)
IEC 61000−4−2 Contact (ESD)

IEC 61000−4−2 Air (ESD)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

= 25°C unless otherwise noted)

J

J

stg

T

L

ESD
ESD

−55 to +125 °C

−65 to +150 °C
260 °C

±12
±15

kV
kV

2

5

1

(Bottom View)

1234

5

3

4

ORDERING INFORMATION

Device Package Shipping

ESD5004MXTBG X3DFN4

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

8000 /

Tape & Reel

†

See Application Note AND8308/D for further description of
survivability specs.

© Semiconductor Components Industries, LLC, 2015

April, 2017 − Rev. 3

1 Publication Order Number:

ESD5004/D

ESD5004

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Working Voltage V
Breakdown Voltage V
Reverse Leakage Current I
Clamping Voltage V
Clamping Voltage

TLP (Note 1)
See Figures 4 and 5

Junction Capacitance C

Symbol Conditions Min Typ Max Unit

RWM

BRIT
R

C

V

C

J

= 25°C unless otherwise specified)

A

I/O Pin to GND 3.3 V

= 1 mA, I/O Pin to GND 3.9 V

V

= 3.3 V, I/O Pin to GND 1.0

RWM

8 x 20 ms, Ipp = 1 A

IPP = 16 A

= −16 A

I

PP

IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)

5.0 9.1 V
10

4.5

VR = 0 V, f = 1 MHz between I/O Pins and GND 3.5 5.0 pF

mA

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z

IEC 61000−4−2 Spec.

Test Volt-

Level

age (kV)

= 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

0

IEC61000−4−2 Waveform

I

First Peak

Current

(A)

Current at

30 ns (A)

Current at

60 ns (A)

peak

100%

90%
1 2 7.5 4 2
2 4 15 8 4

I @ 30 ns

3 6 22.5 12 6
4 8 30 16 8

I @ 60 ns

10%

Figure 1. IEC61000−4−2 Spec

tP = 0.7 ns to 1 ns

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