ON Semiconductor EMI7112 User Manual

EMI Filter with ESD Protection
EMI7112
Product Description
Features
Two Channels of EMI Filtering
±30 kV ESD Protection (IEC 6100042, Contact Discharge)
±30 kV ESD Protection (IEC 6100042, Air Discharge)
Greater than 45 dB of Attenuation at 900 MHz
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
GND B2
www.onsemi.com
WLCSP5
FC SUFFIX
CASE 567KK
BLOCK DIAGRAM
A1
A3
FILTER #1
Applications
Mobile Phones
MAXIMUM RATINGS (T
Rating
ESD Discharge IEC61000−4−2
Contact Discharge Air Discharge
RMS Current per Line I
Operating Temperature Range T
Storage Temperature Range T
Lead Solder Temperature
(10 second duration)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
= 25°C)
A
Symbol Value Unit
V
Line
T
stg
pp
J
L
30 30
350 mA
40 to +125 °C
55 to +150 °C
260 °C
kV
C1
GND B2
C3
FILTER #2
MARKING DIAGRAM
7AM
7A = Specific Device Code M = Date Code
ORDERING INFORMATION
Device Package Shipping
EMI7112FCTAG WLCSP5
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
5000/Tape & Reel
© Semiconductor Components Industries, LLC, 2015
March, 2020 Rev. 0
1 Publication Order Number:
EMI7112/D
EMI7112
Table 1. PIN DESCRIPTIONS
Pin Name Description
A1 Filter #1 Filter #1 Input/Output
A3 Filter #1 Filter #1 Input/Output
C1 Filter #2 Filter #2 Input/Output
C3 Filter #2 Filter #2 Input/Output
B2 GND Device Ground
Orientation
Marking
PACKAGE/PINOUT DIAGRAMS
Top View
(Bumps Down View)
123
+
A
B
7A
C
Orientation Marking
Bottom View
(Bumps Up View)
+
A1 C1
B2
A3 C3
WLCSP5 Package
Table 2. ELECTRICAL OPERATING CHARACTERISTICS (T
Symbol
V
RWM
V
BR
I
LEAK
R
CH
C
t
f
3dB
F
atten
V
ESD
Working Voltage 3.0 V
Breakdown Voltage I
Channel Leakage Current
Channel Resistance (Pins A1 – A3, C1 – C3)
Line Capacitance V
Cutoff Frequency 50 W Source and Load
Stop Band Attenuation @ 700 MHz
Insystem ESD Withstand Voltage a) Contact discharge per IEC 6100042 standard, Level 4
Parameter Test Conditions Min Typ Max Unit
= 25°C unless otherwise noted)
A
= 1 mA; (Note 4) 6.0 V
T
V
= 3.0 V, GND = 0 V
IN
= 0 V, f = 1 MHz 185 250 315 pF
R
Termination
@ 900 MHz
(Notes 1 and 2)
±30
400 nA
0.35
0.8
20 MHz
40 47
W
dB
kV
(External Pins)
b) Contact discharge per IEC 6100042 standard, Level 1
±30
(Internal Pins)
V
TLP Clamping Voltage Forward I
CL
Forward I Forward I
Forward I
PP PP PP
PP
= 8 A
= 16 A = ±8 A
= ±16 A
9.77
11.51
9.66
11.67
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Standard IEC61000−4−2 with C
2. These measurements performed with no external capacitor.
Discharge
= 150 pF, R
3. TVS devices are normally selected according to the working peak reverse voltage (V or continuous peak operating voltage level.
is measured at pulse test current IT.
4. V
BR
Discharge
= 330, GND grounded.
), which should be equal to or greater than the DC
RWM
www.onsemi.com
2
EMI7112
0
PERFORMANCE INFORMATION
Typical Filter Performance (nominal conditions unless specified otherwise, 50 W Environment)
0
10
20
30
S21 (dB)
40
50
60
1.E+07 1.E+08 1.E+09 1.E+10
FREQUENCY (Hz)
Figure 1. Typical Insertion Loss
0
10
20
30
40
CROSSTALK (dB)
50
60
1.E+06 1.E+07 1.E+08 1.E+09 1.E+1
FREQUENCY (Hz)
Figure 2. Typical Channel to Channel Crosstalk
www.onsemi.com
3
Loading...
+ 4 hidden pages