Datasheet DTC144ERLRP, DTC144ERLRM, DTC144ERLRA, DTC144EET1, DTC144E Datasheet (ON Semiconductor)
...
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1 Publication Order Number:
DTC114EET1/D
DTC114EET1 SERIES
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
• Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K) Shipping
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
8A
8B
8C
8D
8F
8H
8J
8K
8L
8M
10
22
47
10
4.7
2.2
4.7
4.7
22
2.2
10
22
47
47
∞
2.2
4.7
47
47
47
3000/Tape & Reel
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CASE 463
SOT–416/SC–75
STYLE 1
NPN SILICON
BIAS RESISTOR
TRANSISTORS
3
2
1
COLLECTOR
3
1
BASE
2
EMITTER
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THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR–4 Board
(1.)
@ TA = 25°C
Derate above 25°C
P
D
200
1.6
mW
mW/°C
Thermal Resistance, Junction to Ambient
(1.)
R
θ
JA
600 °C/W
Total Device Dissipation,
FR–4 Board
(2.)
@ TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
(2.)
R
θ
JA
400 °C/W
Junction and Storage Temperature Range TJ, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0) I
CBO
— — 100 nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) I
CEO
— — 500 nAdc
Emitter–Base Cutoff Current DTC114EET1
(V
EB
= 6.0 V, IC = 0) DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
I
EBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
1.9
2.3
1.5
0.18
0.13
0.2
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V
(BR)CBO
50 — — Vdc
Collector–Emitter Breakdown Voltage
(3.)
(IC = 2.0 mA, IB = 0) V
(BR)CEO
50 — — Vdc
ON CHARACTERISTICS
(3.)
DC Current Gain DTC114EET1
(V
CE
= 10 V, IC = 5.0 mA) DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
h
FE
35
60
80
80
160
8.0
15
80
80
80
60
100
140
140
350
15
30
200
150
140
—
—
—
—
—
—
—
—
—
—
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(I
C
= 10 mA, IB = 5 mA) DTC123EET1
(I
C
= 10 mA, IB = 1 mA) DTC143TET1
DTC143ZET1/DTC124XET1
V
CE(sat)
— — 0.25 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) DTC114EET1
DTC124EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
(V
CC
= 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) DTC144EET1
V
OL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
Output Voltage (of f) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(V
CC
= 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) DTC143TET1
DTC143ZET1
V
OH
4.9 — — Vdc
Input Resistor DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
R1 7.0
15.4
32.9
7.0
3.3
1.5
3.3
3.3
15.4
1.54
10
22
47
10
4.7
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
6.1
2.9
6.1
6.1
28.6
2.86
kΩ
Resistor Ratio DTC114EET1/DTC124EET1/DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
R1/R
2
0.8
0.17
—
0.8
0.055
0.38
0.038
1.0
0.21
—
1.0
0.1
0.47
0.047
1.2
0.25
—
1.2
0.185
0.56
0.056
Figure 1. Derating Curve
250
200
150
100
50
0
–50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
θ
JA
= 600°C/W
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 2. Normalized Thermal Response
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TYPICAL ELECTRICAL CHARACTERISTICS — DTC114EET1
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 3. V
CE(sat)
versus I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
TA= –25°C
75°C
25°C
40
50
Figure 4. DC Current Gain
Figure 5. Output Capacitance
1
0.1
0.01
0.001
020 40
50
IC, COLLECTOR CURRENT (mA)
V
CE(sat)
,
MA
X
IM
U
M
COLLECTOR
VOLTA
G
E
(
VOLTS)
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
TA=75°C
25°C
–25°C
TA= –25°C
25°C
Figure 6. Output Current versus Input Voltage
75°C
25°C
TA= –25°C
100
10
1
0.1
0.01
0.001
01234
V
in
, INPUT VOLTAGE (VOLTS)
5678910
Figure 7. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,
CA
P
ACITA
N
CE
(p
F)
75°C
VCE = 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
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TYPICAL ELECTRICAL CHARACTERISTICS — DTC124EET1
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 8. V
CE(sat)
versus I
C
Figure 9. DC Current Gain
Figure 10. Output Capacitance Figure 11. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
–25°C
100
10
1 100
75°C 25°C
100
0
V
in
, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001
246810
TA= –25°C
0
I
C
, COLLECTOR CURRENT (mA)
100
TA= –25°C
75°C
10
1
0.1
10 20 30 40 50
25°C
Figure 12. Input Voltage versus Output
Current
0.001
V
CE(sat)
,
MA
X
IM
U
M
COLLECTOR
VOLTA
G
E
(
VOLTS)
TA= –25°C
75°C
25°C
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20 50
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,
CA
P
ACITA
N
CE
(p
F)
IC/IB = 10
VCE = 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
VO = 5 V
VO = 0.2 V
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TYPICAL ELECTRICAL CHARACTERISTICS — DTC144EET1
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 13. V
CE(sat)
versus I
C
0246810
100
10
1
0.1
0.01
0.001
V
in
, INPUT VOLTAGE (VOLTS)
TA= –25°C
75°C
25°C
Figure 14. DC Current Gain
Figure 15. Output Capacitance
100
10
1
0.1
010 203040 50
I
C
, COLLECTOR CURRENT (mA)
Figure 16. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
TA=75°C
25°C
–25°C
100
10
1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,
CA
P
ACITA
N
CE
(p
F)
Figure 17. Input Voltage versus Output Current
0
20 40
50
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
25°C
75°C
V
CE(sat)
,
MA
X
IM
U
M
COLLECTOR
VOLTA
G
E
(
VOLTS)
VCE = 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA= –25°C
TA= –25°C
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TYPICAL ELECTRICAL CHARACTERISTICS — DTC114YET1
10
1
0.1
01020304050
100
10
1
0246810
4
3.5
3
2.5
2
1.5
1
0.5
0
02468101520253035404550
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 18. V
CE(sat)
versus I
C
IC, COLLECTOR CURRENT (mA)
020406080
V
CE(sat)
,
MA
X
IM
U
M
COLLECTOR
VOLTA
G
E
(
VOLTS)
Figure 19. DC Current Gain
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 20. Output Capacitance Figure 21. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
C
ob
,
CA
P
ACITA
N
CE
(p
F)
Figure 22. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
–25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
0
2468 1520405060708090
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
25°C
IC/IB = 10
TA= –25°C
TA=75°C
25°C
–25°C
VO = 0.2 V
TA= –25°C
75°C
VO = 5 V
25°C
75°C
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TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 23. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
V
CC
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+12 V
Figure 24. Open Collector Inverter:
Inverts the Input Signal
Figure 25. Inexpensive, Unregulated Current Source
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9
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
1.4
1
0.5 min. (3x)
0.5 min. (3x)
TYPICAL
0.5
SOLDERING PATTERN
Unit: mm
SOT–416/SC–75 POWER DISSIPATION
The power dissipation of the SOT–416/SC–75 is a
function of the pad size. This can vary from the minimum
pad size for soldering to the pad size given for maximum
power dissipation. Power dissipation for a surface mount
device is determined by T
J(max)
, the maximum rated
junction temperature of the die, R
θ
JA
, the thermal
resistance from the device junction to ambient; and the
operating temperature, TA. Using the values provided on
the data sheet, P
D
can be calculated as follows:
PD =
T
J(max)
– T
A
R
θ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
A
of 25°C,
one can calculate the power dissipation of the device which
in this case is 200 milliwatts.
PD =
150°C – 25°C
= 200 milliwatts
600°C/W
The 600°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, a higher power dissipation can be
achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 26 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
Figure 26. Typical Solder Heating Profile
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT
STEP 7
COOLING
200°C
150°C
100°C
50°C
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205° TO 219°C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100°C
150°C
160°C
140°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
170°C
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P ACKAGE DIMENSIONS
SC–75
(SOT–416)
CASE 463–01
ISSUE B
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 0.70 0.80 0.028 0.031
B 1.40 1.80 0.055 0.071
C 0.60 0.90 0.024 0.035
D 0.15 0.30 0.006 0.012
G 1.00 BSC 0.039 BSC
H ––– 0.10 ––– 0.004
J 0.10 0.25 0.004 0.010
K 1.45 1.75 0.057 0.069
L 0.10 0.20 0.004 0.008
S 0.50 BSC 0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) B
–A–
–B–
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
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NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 T oll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Fax Response Line: 303–675–2167 or 800–344–3810 T oll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time)
Email: ONlit–german@hibbertco.com
French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time)
Email: ONlit–french@hibbertco.com
English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time)
Email: ONlit@hibbertco.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy , England, Ireland
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