ON Semiconductor DTC144ERLRP, DTC144ERLRM, DTC144ERLRA, DTC144EET1, DTC144E Datasheet

...
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1 Publication Order Number:
DTC114EET1/D
DTC114EET1 SERIES
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K) Shipping
DTC114EET1 DTC124EET1 DTC144EET1
DTC114YET1
DTC143TET1 DTC123EET1 DTC143EET1
DTC143ZET1 DTC124XET1
DTC123JET1
8A 8B 8C 8D 8F 8H 8J 8K 8L 8M
10 22 47 10
4.7
2.2
4.7
4.7 22
2.2
10 22 47 47
2.2
4.7 47 47 47
3000/Tape & Reel
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CASE 463
SOT–416/SC–75
STYLE 1
NPN SILICON
BIAS RESISTOR
TRANSISTORS
3
2
1
COLLECTOR
3
1
BASE
2
EMITTER
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR–4 Board
(1.)
@ TA = 25°C
Derate above 25°C
P
D
200
1.6
mW
mW/°C
Thermal Resistance, Junction to Ambient
(1.)
R
θ
JA
600 °C/W
Total Device Dissipation,
FR–4 Board
(2.)
@ TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
(2.)
R
θ
JA
400 °C/W
Junction and Storage Temperature Range TJ, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0) I
CBO
100 nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) I
CEO
500 nAdc
Emitter–Base Cutoff Current DTC114EET1
(V
EB
= 6.0 V, IC = 0) DTC124EET1
DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1
I
EBO
— — — — — — — — — —
— — — — — — — — — —
0.5
0.2
0.1
0.2
1.9
2.3
1.5
0.18
0.13
0.2
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V
(BR)CBO
50 Vdc
Collector–Emitter Breakdown Voltage
(3.)
(IC = 2.0 mA, IB = 0) V
(BR)CEO
50 Vdc
ON CHARACTERISTICS
(3.)
DC Current Gain DTC114EET1
(V
CE
= 10 V, IC = 5.0 mA) DTC124EET1
DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1
h
FE
35 60 80 80
160
8.0 15 80 80 80
60 100 140 140 350
15
30 200 150 140
— — — — — — — — — —
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(I
C
= 10 mA, IB = 5 mA) DTC123EET1
(I
C
= 10 mA, IB = 1 mA) DTC143TET1
DTC143ZET1/DTC124XET1
V
CE(sat)
0.25 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) DTC114EET1
DTC124EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1
(V
CC
= 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) DTC144EET1
V
OL
— — — — — — — — — —
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
Output Voltage (of f) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(V
CC
= 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) DTC143TET1
DTC143ZET1
V
OH
4.9 Vdc
Input Resistor DTC114EET1
DTC124EET1 DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1
R1 7.0
15.4
32.9
7.0
3.3
1.5
3.3
3.3
15.4
1.54
10 22 47 10
4.7
2.2
4.7
4.7 22
2.2
13
28.6
61.1 13
6.1
2.9
6.1
6.1
28.6
2.86
k
Resistor Ratio DTC114EET1/DTC124EET1/DTC144EET1
DTC114YET1 DTC143TET1 DTC123EET1/DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1
R1/R
2
0.8
0.17 —
0.8
0.055
0.38
0.038
1.0
0.21 —
1.0
0.1
0.47
0.047
1.2
0.25 —
1.2
0.185
0.56
0.056
Figure 1. Derating Curve
250
200
150
100
50
0
–50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
θ
JA
= 600°C/W
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 2. Normalized Thermal Response
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TYPICAL ELECTRICAL CHARACTERISTICS — DTC114EET1
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 3. V
CE(sat)
versus I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
TA= –25°C
75°C
25°C
40
50
Figure 4. DC Current Gain
Figure 5. Output Capacitance
1
0.1
0.01
0.001 020 40
50
IC, COLLECTOR CURRENT (mA)
V
CE(sat)
,
MA
X
IM
U
M
COLLECTOR
VOLTA
G
E
(
VOLTS)
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
TA=75°C
25°C
–25°C
TA= –25°C
25°C
Figure 6. Output Current versus Input Voltage
75°C
25°C
TA= –25°C
100
10
1
0.1
0.01
0.001 01234
V
in
, INPUT VOLTAGE (VOLTS)
5678910
Figure 7. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,
CA
P
ACITA
N
CE
(p
F)
75°C
VCE = 10 V
f = 1 MHz I
E
= 0 V
T
A
= 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
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TYPICAL ELECTRICAL CHARACTERISTICS — DTC124EET1
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 8. V
CE(sat)
versus I
C
Figure 9. DC Current Gain
Figure 10. Output Capacitance Figure 11. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
–25°C
100
10
1 100
75°C 25°C
100
0
V
in
, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246810
TA= –25°C
0
I
C
, COLLECTOR CURRENT (mA)
100
TA= –25°C
75°C
10
1
0.1 10 20 30 40 50
25°C
Figure 12. Input Voltage versus Output
Current
0.001
V
CE(sat)
,
MA
X
IM
U
M
COLLECTOR
VOLTA
G
E
(
VOLTS)
TA= –25°C
75°C
25°C
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20 50
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,
CA
P
ACITA
N
CE
(p
F)
IC/IB = 10
VCE = 10 V
f = 1 MHz I
E
= 0 V
T
A
= 25°C
VO = 5 V
VO = 0.2 V
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TYPICAL ELECTRICAL CHARACTERISTICS — DTC144EET1
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 13. V
CE(sat)
versus I
C
0246810
100
10
1
0.1
0.01
0.001 V
in
, INPUT VOLTAGE (VOLTS)
TA= –25°C
75°C
25°C
Figure 14. DC Current Gain
Figure 15. Output Capacitance
100
10
1
0.1 010 203040 50
I
C
, COLLECTOR CURRENT (mA)
Figure 16. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
TA=75°C
25°C –25°C
100
10
1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,
CA
P
ACITA
N
CE
(p
F)
Figure 17. Input Voltage versus Output Current
0
20 40
50
10
1
0.1
0.01 I
C
, COLLECTOR CURRENT (mA)
25°C
75°C
V
CE(sat)
,
MA
X
IM
U
M
COLLECTOR
VOLTA
G
E
(
VOLTS)
VCE = 10 V
f = 1 MHz I
E
= 0 V
T
A
= 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA= –25°C
TA= –25°C
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TYPICAL ELECTRICAL CHARACTERISTICS — DTC114YET1
10
1
0.1 01020304050
100
10
1
0246810
4
3.5 3
2.5 2
1.5 1
0.5 0
02468101520253035404550
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 18. V
CE(sat)
versus I
C
IC, COLLECTOR CURRENT (mA)
020406080
V
CE(sat)
,
MA
X
IM
U
M
COLLECTOR
VOLTA
G
E
(
VOLTS)
Figure 19. DC Current Gain
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 20. Output Capacitance Figure 21. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
C
ob
,
CA
P
ACITA
N
CE
(p
F)
Figure 22. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
–25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
0
2468 1520405060708090
f = 1 MHz l
E
= 0 V
T
A
= 25°C
25°C
IC/IB = 10
TA= –25°C
TA=75°C
25°C
–25°C
VO = 0.2 V
TA= –25°C
75°C
VO = 5 V
25°C
75°C
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TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 23. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
V
CC
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+12 V
Figure 24. Open Collector Inverter:
Inverts the Input Signal
Figure 25. Inexpensive, Unregulated Current Source
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MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
1.4
1
0.5 min. (3x)
0.5 min. (3x)
TYPICAL
0.5
SOLDERING PATTERN
Unit: mm
SOT–416/SC–75 POWER DISSIPATION
The power dissipation of the SOT–416/SC–75 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T
J(max)
, the maximum rated
junction temperature of the die, R
θ
JA
, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, P
D
can be calculated as follows:
PD =
T
J(max)
– T
A
R
θ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
A
of 25°C,
one can calculate the power dissipation of the device which in this case is 200 milliwatts.
PD =
150°C – 25°C
= 200 milliwatts
600°C/W
The 600°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation can be achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.
The soldering temperature and time should not exceed 260°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less.
After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during cooling.
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 26 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
Figure 26. Typical Solder Heating Profile
STEP 1
PREHEAT
ZONE 1 “RAMP”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT
STEP 7
COOLING
200°C
150°C
100°C
50°C
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205° TO 219°C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100°C
150°C
160°C
140°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
170°C
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11
P ACKAGE DIMENSIONS
SC–75
(SOT–416)
CASE 463–01
ISSUE B
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 0.70 0.80 0.028 0.031 B 1.40 1.80 0.055 0.071 C 0.60 0.90 0.024 0.035 D 0.15 0.30 0.006 0.012
G 1.00 BSC 0.039 BSC
H ––– 0.10 ––– 0.004 J 0.10 0.25 0.004 0.010 K 1.45 1.75 0.057 0.069 L 0.10 0.20 0.004 0.008 S 0.50 BSC 0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) B
–A–
–B–
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer .
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DTC114EET1/D
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