ON Semiconductor DTA144EET1, DTA143ZET1, DTA123JET1, DTA123EET1, DTA143TET1 Datasheet

DTA114EET1 SERIES

Preferred Devices

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–75/SOT–416 package which is designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC–75/SOT–416 package can be soldered using

wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

• Available in 8 mm, 7 inch/3000 Unit Tape & Reel

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PNP SILICON

BIAS RESISTOR

TRANSISTORS

COLLECTOR

3

1

BASE

2

EMITTER

MAXIMUM RATINGS (T

Rating

Collector-Base Voltage V Collector-Emitter Voltage V Collector Current I

= 25°C unless otherwise noted)

A

Symbol Value Unit

CBO CEO

C

DEVICE MARKING AND RESISTOR VALUES

Device Marking R1 (K) R2 (K) Shipping

DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143ZET1 DTA124XET1 DTA123JET1

6A 6B 6C 6D 6E 6F 6H 6K 6L 6M

10 22 47 10 10

4.7

2.2

4.7 22

2.2

10 22 47 47

∞ ∞

2.2 47 47 47

50 Vdc 50 Vdc

100 mAdc

3000/Tape & Reel

3

2

1

CASE 463

SOT–416/SC–75

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 0

1 Publication Order Number:

DTA114EET1/D

DTA114EET1 SERIES

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation,

FR–4 Board

Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation,

FR–4 Board

Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range TJ, T

ELECTRICAL CHARACTERISTICS (T

OFF CHARACTERISTICS

Collector–Base Cutoff Current (VCB = 50 V, IE = 0) I Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) I Emitter–Base Cutoff Current DTA114EET1

(V

EB

Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V Collector–Emitter Breakdown Voltage

ON CHARACTERISTICS

DC Current Gain DTA114EET1

(V

CE

Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

(I

= 10 mA, IB = 5 mA) DTA123EET1

C

= 10 mA, IB = 1 mA) DTA114TET1/DTA143TET1/

(I

C

DTA143ZET1/DTA124XET1 Output Voltage (on)

(V

CC

(V

CC

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 × 1.0 Inch Pad

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

(1.)

@ TA = 25°C

(1.)

(2.)

@ TA = 25°C

(2.)

= 25°C unless otherwise noted)

A

Characteristic

= 6.0 V, IC = 0) DTA124EET1

DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143ZET1 DTA124XET1 DTA123JET1

(3.)

(IC = 2.0 mA, IB = 0) V

(3.)

= 10 V, IC = 5.0 mA) DTA124EET1

DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143ZET1 DTA124XET1 DTA123JET1

= 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) DTA114EET1

DTA124EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143ZET1 DTA124XET1 DTA123JET1

= 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) DTA144EET1

P

D

R

θ

JA

P

D

R

θ

JA

stg

200

1.6

mW

mW/°C

600 °C/W

300

2.4

mW

mW/°C

400 °C/W

–55 to +150 °C

Symbol Min Typ Max Unit

CBO CEO

I

EBO

(BR)CBO (BR)CEO

h

FE

V

CE(sat)

V

OL

— — 100 nAdc — — 500 nAdc —

— — — — — — — — —

— — — — — — — — — —

0.5

0.2

0.1

0.2

0.9

1.9

2.3

0.18

0.13

0.2

mAdc

50 — — Vdc 50 — — Vdc

35 60 80

80 160 160

8.0 80 80 80

60 100 140 140 250 250

15 140 130 140

— — — — — — — — — —

— — 0.25 Vdc

Vdc — — — — — — — — — —

— — — — — — — — — —

0.2

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2

DTA114EET1 SERIES

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic

Output Voltage (of f) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)

(V

= 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) DTA114TET1

CC

= 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) DTA143TET1

(V

CC

DTA123EET1

Input Resistor DTA114EET1

DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143ZET1 DTA124XET1 DTA123JET1

Resistor Ratio DTA114EET1/DTA124EET1/DTA144EET1

DTA114YET1 DTA114TET1/DTA143TET1 DTA123EET1 DTA143ZET1 DTA124XET1 DTA123JET1

250

Symbol Min Typ Max Unit

V

OH

R1 7.0

R1/R

2

4.9 — — Vdc

15.4

32.9

7.0

3.3

1.5

3.3

15.4

1.54

0.8

0.17

—

0.8

0.055

0.38

0.038

10 22 47 10 10

4.7

2.2

4.7 22

2.2

1.0

0.21 —

1.0

0.1

0.47

0.047

13

28.6

61.1 13 13

6.1

2.9

6.1

28.6

2.86

1.2

0.25 —

1.2

0.185

0.56

0.056

kΩ

1.0

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

200

150

100

R

50

, POWER DISSIPATION (MILLIWATTS)

D

P

0

–50 0 50 100 150

= 600°C/W

θ

JA

T

, AMBIENT TEMPERATURE (°C)

A

Figure 1. Derating Curve

SINGLE PULSE

0.001

0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE

t, TIME (s)

Figure 2. Normalized Thermal Response

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DTA114EET1 SERIES

TYPICAL ELECTRICAL CHARACTERISTICS — DTA114EET1

1

IC/IB = 10

TA= –25°C

0.1 75°C

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

0.01

CE(sat)

V

040

4

3

2

20

, COLLECTOR CURRENT (mA)

I

C

Figure 3. V

CE(sat)

versus I

C

f = 1 MHz l

= 0 V

E

= 25°C

T

A

25°C

50

1000

100

, DC CURRENT GAIN (NORMALIZED)

FE

10

100

10

1

VCE = 10 V

TA=75°C

25°C

–25°C

1 10 100

IC, COLLECTOR CURRENT (mA)

Figure 4. DC Current Gain

75°C

25°C

TA= –25°C

, CAPACITANCE (pF)

ob

1

C

0

010203040

V

, REVERSE BIAS VOLTAGE (VOLTS)

R

Figure 5. Output Capacitance Figure 6. Output Current versus Input Voltage

100

VO = 0.2 V

10

1

, INPUT VOLTAGE (VOLTS)

in

V

0.1 0

Figure 7. Input Voltage versus Output Current

0.1

, COLLECTOR CURRENT (mA) h

C

0.01

I

50

10 20 30 40 50

, COLLECTOR CURRENT (mA)

I

C

0.001 0

TA= –25°C

75°C

12345

V

25°C

678910

, INPUT VOLTAGE (VOLTS)

in

VO = 5 V

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