ON Semiconductor CSPEMI606, CSPEMI608 User Manual

CSPEMI606/608
LCD EMI Filter Array with ESD Protection
Description
These devices are particularly well suited for portable electronics (e.g. wireless handsets, PDAs, notebook computers) because of their small package format and easytouse pin assignments. They are ideal for EMI filtering and protecting data lines from ESD for the LCD display in clamshell handsets. The CSPEMI606 and CSPEMI608 are available in spacesaving, lowprofile chipscale packages.
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WLCSP15
CASE 567BS
MARKING DIAGRAM
606
CSPEMI606
15Bump CSP
WLCSP20
CASE 567BZ
EMI608
CSPEMI608
20Bump CSP
Features
Six and Eight Channels of EMI Filtering
±15 kV ESD Protection on each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
±30 kV ESD Protection on each Channel (HBM)
Better than 30 dB of Attenuation at 1 GHz to 3 GHz
15Bump, 2.960 mm x 1.330 mm Footprint
Chip Scale Package (CSPEMI606)
20Bump, 4.000 mm x 1.458 mm Footprint
Chip Scale Package (CSPEMI608)
Chip Scale Package Features Extremely Low Lead Inductance for
Optimum Filter and ESD Performance
These Devices are PbFree and are RoHS Compliant
Applications
LCD Data Lines in Clamshell Wireless Handsets
EMI Filtering & ESD Protection for HighSpeed I/O Data Ports
Wireless Handsets / Cell Phones
Notebook Computers
PDAs / Handheld PCs
EMI Filtering for HighSpeed Data Lines
606 = CSPEMI606 EMI608 = CSPEMI608
ORDERING INFORMATION
Device Package Shipping
CSPEMI606G CSP15
(PbFree)
CSPEMI608G CSP20
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
3500/Tape & Reel
3500/Tape & Reel
© Semiconductor Components Industries, LLC, 2011
May, 2011 Rev. 4
1 Publication Order Number:
CSPEMI606/608/D
CSPEMI606/608
ELECTRICAL SCHEMATIC
100
FILTERn*
15 pF 15 pF
GND
(Pins B1−Bn)
1 of 6 or 8 EMI Filtering + ESD Channels
*See Package/Pinout Diagrams for expanded pin information.
PACKAGE / PINOUT DIAGRAMS
FILTERn*
Bottom View
(Bumps Up View)
C3 C4
B1
C3 C4
A3 A4
B2
A3 A4
B2
C5 C6
A5 A6
C5 C6
B3
A5 A6
B3
C7 C8
A7 A8
Orientation
Marking
Orientation
Marking
A
B
C
123
+
A
B
C
(Bumps Down View)
123
+
Top View
564
56748
Orientation
CSPEMI606
CSP Package
Orientation
Marking
CSPEMI608
CSP Package
Marking
C1 C2
A1 A2
A1
C1 C2
B1
A1 A2
A1
Table 1. PIN DESCRIPTIONS
Pin(s)
CSPEMI606 CSPEMI608 CSPEMI606 CSPEMI608
A1 A1 FILTER1 Filter Channel 1 C1 C1 FILTER1 Filter Channel 1
A2 A2 FILTER2 Filter Channel 2 C2 C2 FILTER2 Filter Channel 2
A3 A3 FILTER3 Filter Channel 3 C3 C3 FILTER3 Filter Channel 3
A4 A4 FILTER4 Filter Channel 4 C4 C4 FILTER4 Filter Channel 4
A5 A5 FILTER5 Filter Channel 5 C5 C5 FILTER5 Filter Channel 5
A6 A6 FILTER6 Filter Channel 6 C6 C6 FILTER6 Filter Channel 6
A7 FILTER7 Filter Channel 7 C7 FILTER7 Filter Channel 7
A8 FILTER8 Filter Channel 8 C8 FILTER8 Filter Channel 8
B1B3 B1B4 GND Device Ground
Name Description
Pin(s)
Name Description
B4
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CSPEMI606/608
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Storage Temperature Range 65 to +150 °C
DC Power per Resistor 100 mW
DC Package Power Rating 500 mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range −40 to +85 °C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
R Resistance 80 100 120
C Capacitance At 2.5 V DC, 1 MHz,
V
DIODE
I
LEAK
V
Diode Standoff Voltage
Diode Leakage Current (reverse bias) V
Signal Voltage
SIG
Positive Clamp Negative Clamp
V
ESD
Insystem ESD Withstand Voltage
a) Human Body Model, MILSTD883, Method 3015 b) Contact Discharge per IEC 61000−4−2 Level 4
V
Clamping Voltage during ESD Discharge
CL
MILSTD883 (Method 3015), 8 kV
Positive Transients Negative Transients
f
1. T
A
2. ESD applied to input and output pins with respect to GND, one at a time.
Cutoff Frequency
C
= 25°C unless otherwise specified.
Z
SOURCE
= 50 , Z
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping
voltage is measured at Pin C1.
4. Unused pins are left open.
Parameter Conditions Min Typ Max Units
12 15 18 pF
30 mV AC
I
= 10 A
DIODE
= 3.3 V 200 nA
DIODE
I
= 10 mA
LOAD
5.6
1.5
(Notes 2 and 4)
6.0 V
6.8
0.8
9.0
0.4
V
kV
±30 ±15
(Notes 2, 3 and 4)
V
+12
7
120 MHz
LOAD
= 50
R = 100 , C = 15 pF
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CSPEMI606/608
PERFORMANCE INFORMATION
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
Figure 1. Insertion Loss vs. Frequency (A1C1 to GND B1)
Figure 2. Insertion Loss vs. Frequency (A2C2 to GND B1)
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