ON Semiconductor CSPEMI202FCTAG User Manual

CSPEMI202FCTAG

_

_

2 Channel Headset
Microphone EMI Filter with
ESD Protection

Product Description

The CSPEMI202FCTAG is a dual low−pass filter array integrating
two pi−style filters (C−R−C) that reduce EMI/RFI emissions while at
the same time providing ESD protection. This part is custom−designed
to interface with a microphone port on a cellular telephone or similar
device. Each high quality filter provides more than 35 dB attenuation
in the 800−2700 MHz range. These pi−style filters support
bidirectional filtering, controlling EMI both to and from a microphone
element. They also support bipolar signals, enabling audio signals to
pass through without distortion.

In addition, the CSPEMI202AG provides a very high level of
protection for sensitive electronic components that may be subjected
to electrostatic discharge (ESD). The diodes safely dissipate ESD
strikes of ±8 kV, the maximum requirement of the IEC 61000−4−2
international standard. Using the MIL−STD−883 (Method 3015)
specification for Human Body Model (HBM) ESD, the device
provides protection for contact discharges to greater than ±15 kV.

The CSPEMI202FCTAG is particularly well−suited for portable
electronics (e.g. cellular telephones, PDAs, notebook computers)
because of its small package format and low weight. The
CSPEMI202FCTAG is available in a space−saving, low−profile Chip
Scale Package with RoHS compliant lead−free finishing.

Features

• Two Channels of EMI Filtering

• Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C)

Network

• Greater than 40 dB Attenuation at 1 GHz

• ±8 kV ESD Protection on each Channel

(IEC 61000−4−2 Level 4, Contact Discharge)

• ±15 kV ESD Protection on each Channel (HBM)

• Supports Bipolar Signals − Ideal for Audio Applications

• Chip Scale Package Features Extremely Low Lead Inductance for

Optimum Filter and ESD Performance

• 5−Bump, 0.930 x 1.410 mm Footprint Chip Scale Package (CSP)

• These Devices are Pb−Free and are RoHS Compliant

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onsemi.com

WLCSP5

AG SUFFIX

CASE 567LT

ELECTRICAL SCHEMATIC

A1

A3

MIC_IN2 MIC_IN1

B2

GND

MARKING DIAGRAM

AE = CSPEMI202FC

ORDERING INFORMATION

Device Package Shipping

68 W

47 pF 47 pF

68 W

47 pF 47 pF

+

AE

C1

C3

†

OUT1

MIC

OUT2

MIC

Applications

• EMI Filtering and ESD Protection for Headset Microphone Ports

• Wireless Handsets

• Handheld PCs / PDAs

• MP3 Players

• Digital Camcorders

• Notebooks

• Desktop PCs

© Semiconductor Components Industries, LLC, 2015

August, 2015 − Rev. 0

1 Publication Order Number:

CSPEMI202FCTAG CSP−5

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3500 / Tape &

Reel

CSPEMI202FC/D

CSPEMI202FCTAG

Table 1. PIN DESCRIPTIONS

5−bump CSP Package

Pin Name Description

A1 MIC_IN1 Microphone Input 1 (from microphone)

A3 MIC_IN2 Microphone Input 2 (from microphone)

B2 GND Device Ground

C1 MIC_OUT1 Microphone Output 1 (to audio circuitry)

C3 MIC_OUT1 Microphone Output 2 (to audio circuitry)

Orientation

Marking

PACKAGE / PINOUT DIAGRAMS

Top View

(Bumps Down View)

1 2 3

+

A

B

C

Orientation

Marking

(Pins Up View)

Bottom View

C1 C3

B2

A1

A1 A3

CSPEMI202FC

CSP Package

SPECIFICATIONS

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameter Rating Units

Storage Temperature Range −65 to +150 °C

DC Power per Resistor 100 mW

DC Package Power Rating 200 mW

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

Table 3. STANDARD OPERATING CONDITIONS

Parameter Rating Units

Operating Temperature Range −40 to +85 °C

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

R

C

I

LEAK

V

Resistance 61 68 75

1

Channel Capacitance 76 94 112 pF

1

Diode Leakage Current V

Signal Voltage

SIG

Positive Clamp
Negative Clamp

V

ESD

In−system ESD Withstand Voltage

a) Human Body Model, MIL−STD−883, Method 3015
b) Contact Discharge per IEC 61000−4−2 Level 4

V

Clamping Voltage during ESD Discharge

CL

MIL−STD−883 (Method 3015), 8 kV

Positive Transients
Negative Transients

f

Cut−off frequency

C

Z

SOURCE

= 50 W, Z

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. T

= 25°C unless otherwise specified.

A

2. ESD applied to input and output pins with respect to GND, one at a time.

3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping

voltage is measured at Pin C1.

Parameter Conditions Min Typ Max Units

W

= 5.0 V 1.0

IN

I

= 10 mA

LOAD

5

mA

V

−157−1015−5

(Note 2)

kV

±15

±8

(Notes 2 and 3)

V

+15

−19

60 MHz

= 50 W

LOAD

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