ON Semiconductor CS8182 Technical data

ON Semiconductor CS8182 Technical data

CS8182YDF8

CS8182

Micropower 200 mA

Low Dropout Tracking

Regulator/Line Driver

The CS8182 is a monolithic integrated low dropout tracking regulator designed to provide adjustable buffered output voltage that closely tracks (±10 mV) the reference input. The output delivers up to 200 mA while being able to be configured higher, lower or equal to the reference voltages.

The output has been designed to operate over a wide range (2.8 V to 45 V) while still maintaining excellent DC characteristics. The CS8182 is protected from reverse battery, short circuit and thermal runaway conditions. The device also can withstand 45 V load dump transients and −50 V reverse polarity input voltage transients. This makes it suitable for use in automotive environments.

The VREF/ENABLE lead serves two purposes. It is used to provide the input voltage as a reference for the output and it also can be pulled low to place the device in sleep mode where it nominally draws less than 30 A from the supply.

Features

200 mA Source Capability

Output Tracks within ±10 mV Worst Case

Low Dropout (0.35 V Typ. @ 200 mA)

Low Quiescent Current

Thermal Shutdown

Short Circuit Protection

Wide Operating Range

Internally Fused Leads in SO−8 Package

For Automotive and Other Applications Requiring Site and Change Control

VIN

 

 

VOUT

 

 

Current Limit &

 

 

 

SAT Sense

 

 

 

Adj

 

 

 

 

 

ENABLE

 

 

 

+

VREF/ENABLE

 

 

 

 

 

 

+

 

 

 

GND

 

Thermal

 

 

Shutdown

 

 

 

 

 

 

 

2.0 V

Figure 1. Block Diagram

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8

1

1

5

 

SO−8

D2PAK−5

DF SUFFIX

DPS SUFFIX

CASE 751

CASE 936AC

PIN CONNECTIONS AND

MARKING DIAGRAMS

VOUT

1

 

 

 

 

VIN

 

 

 

8182 ALYW

 

 

 

GND

 

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

GND

 

 

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

Adj

 

 

 

 

 

VREF/ENABLE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tab

GND

 

 

 

 

 

Pin

1. VIN

CS8182

 

 

2. VOUT

AWLYWW

 

 

3. GND

 

 

4. Adj

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5. VREF

1

 

 

 

 

 

 

 

A

 

 

= Assembly Location

WL, L = Wafer Lot

 

YY, Y

 

 

= Year

 

 

 

WW, W = Work Week

ORDERING INFORMATION*

Device

Package

Shipping²

CS8182YDF8

SO−8

95 Units/Rail

CS8182YDFR8

SO−8

2500 Tape & Reel

 

 

 

CS8182YDPS5

D2PAK 5−PIN

50 Units/Rail

CS8182YDPSR5

D2PAK 5−PIN

750 Tape & Reel

*Consult your local sales representative for SO−8 with exposed pads package option.

²For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

1

Publication Order Number:

August, 2004 − Rev. 21

 

CS8182/D

CS8182

PACKAGE PIN DESCRIPTION

Package Lead Number

 

 

 

 

 

 

SO−8

D2PAK 5−PIN

Lead Symbol

Function

8

1

VIN

Input voltage.

1

2

VOUT

Regulated output.

2, 3, 6, 7

3

GND

Ground.

 

 

 

 

4

4

Adj

Adjust lead.

 

 

 

 

5

5

VREF/ENABLE

Reference voltage and ENABLE input.

MAXIMUM RATINGS

Rating

 

Value

Unit

 

 

 

 

Storage Temperature

 

−65 to 150

°C

 

 

 

 

Supply Voltage Range (continuous)

 

−15 to 45

V

 

 

 

 

Supply Voltage Range (normal, continuous)

 

3.4 to 45

V

 

 

 

 

Peak Transient Voltage (VIN = 14 V, Load Dump Transient = 31 V)

 

45

V

 

 

 

 

Voltage Range (Adj, VOUT, VREF/ENABLE)

 

−10 to 45

V

 

 

 

 

Maximum Junction Temperature

 

150

°C

 

 

 

 

Package Thermal Resistance, SO−8:

 

 

 

Junction−to−Case, R JC

 

25

°C/W

Junction−to−Ambient, R JA

 

110

°C/W

Package Thermal Resistance, D2PAK, 5−Pin:

 

 

 

Junction−to−Case, R JC

 

4.0

°C/W

Junction−to−Ambient, R JA

 

10−50**

°C/W

ESD Capability (Human Body Model)

 

2.0

kV

(Machine Model)

 

200

V

 

 

 

 

Lead Temperature Soldering:

Reflow: (SO−8)

240 peak

 

(Note 1)

(D2PAK)

225 peak

°C

 

 

(Note 2)

 

 

 

 

 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.60 second maximum above 183°C.

2.−5 °C/+0°C allowable conditions.

*Depending on thermal properties of substrate. R JA = R JC + R CA

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CS8182

ELECTRICAL CHARACTERISTICS (VIN = 14 V; VREF/ENABLE > 2.75 V; −40 °C < TJ < +125°C; COUT 10 F; 0.1 < COUT−ESR < 1.0 @ 10 kHz, unless otherwise specified.)

Parameter

Test Conditions

Min

Typ

Max

Unit

 

 

 

 

 

 

Regular Output

 

 

 

 

 

 

 

 

 

 

 

VREF − V OUT

4.5 V VIN 26 V, 100 A IOUT 200 mA, Note 3

−10

10

mV

VOUT Tracking Error

VIN = 12 V, IOUT = 30 mA, VREF = 5.0 V, Note 3

−5.0

5

mV

Dropout Voltage (VIN − V OUT)

IOUT = 100 A

100

150

mV

 

IOUT = 30 mA

500

mV

 

IOUT = 200 mA

350

600

mV

Line Regulation

4.5 V VIN 26 V, Note 3

10

mV

 

 

 

 

 

 

Load Regulation

100 A IOUT 200 mA, Note 3

10

mV

 

 

 

 

 

 

Adj Lead Current

Loop in Regulation

0.2

1.0

A

 

 

 

 

 

 

Current Limit

VIN = 14 V, VREF = 5.0 V, VOUT = 90% of VREF, Note 3

225

700

mA

 

 

 

 

 

 

Quiescent Current (IIN − I OUT)

VIN = 12 V, IOUT = 200 mA

15

25

mA

 

VIN = 12 V, IOUT = 100 A

75

150

A

 

VIN = 12 V, VREF/ENABLE = 0 V

30

55

A

Reverse Current

VOUT = 5.0 V, VIN = 0 V

0.2

1.5

mA

Ripple Rejection

f = 120 Hz, IOUT = 200 mA, 4.5 V VIN 26 V

60

dB

Thermal Shutdown

GBD

150

180

210

°C

 

 

 

 

 

 

VREF/ENABLE

 

 

 

 

 

 

 

 

 

 

 

Enable Voltage

0.80

2.00

2.75

V

 

 

 

 

 

 

Input Bias Current

VREF/ENABLE

0.2

1.0

A

3. VOUT connected to Adj lead.

 

 

 

 

 

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