ON Semiconductor CM6305 User Manual

CM6305

EMI Filter with ESD
Protection for SIM Card
Applications

Product Description

The CM6305 is a 3 x 3, 8−bump EMI filter with ESD protection
device for SIM card applications in a 0.4 mm pitch CSP form factor. It
is fully compliant with IEC 61000−4−2. The CM6305 is also RoHS II
compliant.

ELECTRICAL SCHEMATIC

V (C2) {External}

GND (B2)

A

B

C

R1
R2
R3

Bottom View

(Bumps Up View)

23

A2A3

B2B3

C1C2C3

1

B1

I1 (A2)
I2 (B1)
I3 (C1)

A1

A1 Corner
Indicator

O1 (A3)
O2 (B3)
O3 (C3)

Internal

Orientation

Marking

PACKAGE / PINOUT DIAGRAMS

Top View

(Bumps Down View)

123

+

A

B

C

65

External

http://onsemi.com

WLCSP8

CASE 567CE

MARKING DIAGRAM

65

YWW

65 = CM6305
YWW = Date Code

ORDERING INFORMATION

Device Package Shipping

WLCSP−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

5000/Tape & ReelCM6305

†

Table 1. PIN DESCRIPTIONS

Pin Description Pin Description

A2 Channel 1 External A3 Channel 1 Internal

B1 Channel 2 External B3 Channel 2 Internal

C1 Channel 3 External C3 Channel 3 Internal

B2 GND C2 V External

© Semiconductor Components Industries, LLC, 2011

August, 2011 − Rev. 2

1 Publication Order Number:

CM6305/D

CM6305

ELECTRICAL SPECIFICATIONS AND CONDITIONS

Table 2. PARAMETERS AND OPERATING CONDITIONS

Parameter Rating Units

Storage Temperature Range –55 to +150 °C

Operating Temperature Range –40 to +85 °C

Power Dissipation at 70°C per Channel 60 mW

Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol Parameter Conditions Min Typ Max Units

R

Resistance 80 100 120

1

R

Resistance 37.6 47 56.4

2

R

Resistance 80 100 120

3

I

LEAK

V

1. All parameters specified at TA = 25°C unless otherwise noted.

2. Standard IEC 61000−4−2 with C

Leakage Current per Channel VIN = 3.0 V 10 100 nA

C

Capacitance on Filter Channels 1, 2 and 3 At 1 MHz, V

Capacitance on Clamp Channel (pin C2) At 1 MHz, V

V

Breakdown Voltage (Positive) I

B

ESD Protection Peak Discharge Voltage at A2, B1 and C1 pins

ESD

a) Contact Discharge per IEC 61000−4−2 standard
b) Air Discharge per IEC 61000−4−2 standard

ESD Protection Peak Discharge Voltage at C2 pin

a) Contact Discharge per IEC 61000−4−2 standard
b) Air Discharge per IEC 61000−4−2 standard

ESD Protection Peak Discharge Voltage at A3, B3 and C3 pins

a) Contact Discharge per IEC 61000−4−2 standard
b) Air Discharge per IEC 61000−4−2 standard

Discharge

= 150 pF, R

Discharge

= 330 W.

= 1 mA 6 7 9 V

R

(Note 2)

(Note 2)

(Note 2)

= 0 V 8 10 12 pF

IN

= 0 V 8 10 12 pF

IN

±8

±15

±15
±15

±2
±2

W

W

W

kV

kV

kV

Table 4. CSP TAPE AND REEL SPECIFICATIONS

Pocket Size (mm)

Part Number Chip Size (mm)

†

B0 X A0 X K

Tape Width

0

W

Reel Dia. Qty Per Reel P

P

0

1

CM6305 1.16 X 1.16 X 0.60 1.27 X 1.27 X 0.69 8 mm 178 mm (7″) 5000 4 mm 4 mm

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

http://onsemi.com

2