ON Semiconductor CM1406 User Manual

CM1406
*
4 and 8-Channel EMI Filter Arrays with ESD Protection
Product Description
integrates either four or eight pi filters (C−R−C). Each CM1406 filter has component values of 15 pF − 200 W 15 pF. These parts include ESD protection diodes on every pin, providing a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The ESD diodes connected to the filter ports safely dissipate ESD strikes of ±15 kV contact discharge, twice the specification requirement of the IEC 61000−4−2, Level 4 international standard. Using the MIL−STD−883 (Method 3015) specification for Human Body Model (HBM) ESD, the pins are protected for contact discharges at greater than ±30 kV.
This device is particularly well suited for portable electronics (e.g. mobile handsets, PDAs, notebook computers) because of its small package and easy−to−use pin assignments. In particular, the CM1406 is ideal for EMI filtering and protecting data lines from ESD in wireless handsets.
The CM1406 is available in space−saving, low−profile, 8−lead and 16lead WDFN packages. It is fabricated with Centuriont process and available with lead−free finishing.
DE SUFFIX
CASE 511BE
FILTERn*
GND
http://onsemi.com
WDFN8
BLOCK DIAGRAM
15 pF
WDFN16
DE SUFFIX
CASE 511AU
200 W
FILTERn*
15 pF
Features
Four and Eight Channels of EMI Filtering with ESD Protection
1 of 4/8 EMI Filtering + ESD Channels
See Package/Pinout Diagrams for Expanded Pin Information.
Greater than 30 dB of Attenuation from 800 MHz to 3 GHz
±15 kV ESD Protection (IEC 6100042, Contact Discharge)
MARKING DIAGRAM
±30 kV ESD Protection (HBM)
Fabricated with Centuriont Advanced Low Capacitance Zener
Process Technology
N06
4E
N68E M
Space Saving, LowProfile 8 and 16Lead WDFN Packages
These Devices are PbFree and are RoHS Compliant
Applications
N06 4E = CM1406−04DE N68E = CM1406−08DE
I/O Port Protection for Mobile Handsets, Notebook Computers,
PDAs etc.
EMI Filtering for Data Ports in Cell Phones, PDAs or Notebook
Computers
EMI Filtering for LCD, Camera and ChiptoChip Data Lines
CM140604DE WDFN8
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
ORDERING INFORMATION
Device Package Shipping
(PbFree)
WDFN16
(PbFree)
3000/Tape & Reel
3000/Tape & ReelCM140608DE
© Semiconductor Components Industries, LLC, 2011
March, 2011 Rev. 3
1 Publication Order Number:
CM1406/D
CM1406
PACKAGE / PINOUT DIAGRAMS
CM140604DE
8Lead WDFN Package
CM140608DE
16Lead WDFN Package
with Exposed End Pads
Pin 1 Marking
Top View
(Pins Down View)
87 65
N06
Pin 1
Marking
16 15 14 13 12 11 10 9
12 345678
4E
12 34
N68E
16 15 14 13 12 11 10 9
Bottom View
(Pins Up View)
1234
GND
PAD
8765
12345678
GND PAD
Table 1. PIN DESCRIPTIONS
Pins
140604Dx 140608Dx 140604Dx 140608Dx
1 1 FILTER1 Filter Channel 1 8 16 FILTER1 Filter Channel 1
2 2 FILTER2 Filter Channel 2 7 15 FILTER2 Filter Channel 2
3 3 FILTER3 Filter Channel 3 6 14 FILTER3 Filter Channel 3
4 4 FILTER4 Filter Channel 4 5 13 FILTER4 Filter Channel 4
5 FILTER5 Filter Channel 5 12 FILTER5 Filter Channel 5
6 FILTER6 Filter Channel 6 11 FILTER6 Filter Channel 6
7 FILTER7 Filter Channel 7 10 FILTER7 Filter Channel 7
8 FILTER8 Filter Channel 8 9 FILTER8 Filter Channel 8
GND Pad GND Device Ground
Name Description
Pins
Name Description
http://onsemi.com
2
CM1406
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Storage Temperature Range –65 to +150 °C
DC Power per Resistor 100 mW
Package DC Power Rating 300 mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range –40 to +85 °C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol Parameter Conditions Min Typ Max Units
R Resistance 160 200 240
C Capacitance At 2.5 V DC, 1 MHz, 30 mV AC 12 15 18 pF
V
DIODE
I
LEAK
V
V
SIG
ESD
Diode Standoff Voltage
Diode Leakage Current (Reverse Bias) V
Signal Voltage
Positive Clamp Negative Clamp
Insystem ESD Withstand Voltage
a) Human Body Model, MILSTD883,
I
= 10 mA
DIODE
= 3.3 V 0.1 1
DIODE
I
LOAD
I
LOAD
= 10 mA = 10 mA
5.6
1.5
(Note 2)
30
6.0 V
6.8
0.8
Method 3015
b) Contact Discharge per
15
IEC 61000−4−2 Level 4
f
C
1. T
= 25°C unless otherwise specified.
A
2. ESD applied to input and output pins with respect to GND, one at a time.
Cutoff Frequency
SOURCE
= 50 W, Z
Z
LOAD
= 50 W
R = 200 W, C = 15 pF
105
9.0
0.4
W
mA
V
kV
MHz
http://onsemi.com
3
CM1406
PERFORMANCE INFORMATION
Typical Filter Performance (nominal conditions unless specified otherwise, 0 V DC Bias, 50 W Environment)
Figure 1. Channel 1 EMI Filter Performance (CM140604 only)
Figure 2. Channel 2 EMI Filter Performance (CM140604 only)
http://onsemi.com
4
Loading...
+ 9 hidden pages