ON Semiconductor CM1241 User Manual

CM1241

4-Channel Low Capacitance
Dual-Voltage ESD Protection
Array

Features

• 3 Channels of Low Voltage ESD Protection

• 1 Channel of High Voltage ESD Protection

• Provides ESD Protection to IEC61000−4−2 Level 4:

±8 kV Contact Discharge (Pins 1−3)
±15 kV Contact Discharge (Pin 4)

• Low Channel Input Capacitance

• Minimal Capacitance Change with Temperature and Voltage

• High Voltage Zener Diode Protects Supply Rail

• No Need for External Bypass Capacitors

• Each I/O Pin Can Withstand Over 1000 ESD Strikes*

• These Devices are Pb−Free and are RoHS Compliant

TYPICAL APPLICATION

CH1

CH2

CH3

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1

WDFN−8

D4 SUFFIX

CASE 511BF

BLOCK DIAGRAM

(Internal)

V

P

Pin 1

Pin 2

Pin 3

Pins 6 − 8

V

N

MARKING DIAGRAM

8

V

CC

Pin 4

Pin 5

GND

AW1 MG

G

AW1 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

WDFN−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

*Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges

are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production
test to verify that all of the tested parameters are within spec after the 1000 strikes.

© Semiconductor Components Industries, LLC, 2011

February, 2011 − Rev. 4

1 Publication Order Number:

3000/Tape & ReelCM1241−04D4

†

CM1241/D

CM1241

Table 1. PIN DESCRIPTIONS

4−Channel, 8−Lead, WDFN−8 Package

Pin Name Type Description

1 CH1 I/O LV Low−capacitance ESD Channel

2 CH2 I/O LV Low−capacitance ESD Channel

3 CH3 I/O LV Low−capacitance ESD Channel

4 V

5 GND Ground

6 V

7 V

8 V

DAP GND Die Attach Pad (Ground)

HV VDDHV ESD Channel

CC

N

N

N

Negative Voltage Supply Rail

Negative Voltage Supply Rail

Negative Voltage Supply Rail

Pin 1

Marking

PACKAGE / PINOUT DIAGRAMS

Top View

(Pins Down View)

8 7 6 5

1 2 3 4

8−Lead WDFN

Bottom View

(Pins Up View)

1234

DAPAW1

8765

SPECIFICATIONS

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameter Rating Units

DC Voltage on Low−voltage Pins 6.0 V

DC Voltage on High−voltage Pins (VCC pin) 14.5 V

Operating Temperature Range –40 to +85 °C

Storage Temperature Range –65 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

Table 3. STANDARD OPERATING CONDITIONS

Parameter Rating Units

Operating Temperature Range –40 to +85 °C

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CM1241

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note1)

Symbol

V

F

I

LEAK

C

IN

ΔC

IN

I

LEAK_HV

C

IN_HV

V

F_HV

LV Diode Reverse Voltage

(Positive Voltage)

LV Diode Forward Voltage

(Negative Voltage)

LV Channel Leakage Current
(Pins 1 and 2)

LV Channel Leakage Current
(Pin 3 only)

LV Channel Input Capacitance At 1 MHz, V

LV Channel Input Capacitance
Matching

HV Channel Leakage Current T

HV Channel Input Capacitance At 1 MHz, V

HV Diode Breakdown Voltage

Positive Voltage

Parameter Conditions Min Typ Max Units

I

= 10 mA; T

F

I

= 10 mA; T

F

= 25°C 6.8 8.2 9.2 V

A

= 25°C –1.05 –0.9 –0.6 V

A

TA = −30°C to 65°C; VIN = 3.3 V,
V

= 0 V

N

TA = −30°C to 65°C; VIN = 3.3 V,
V

= 0 V

N

= 0 V, VIN = 1.65 V 1.2 1.5 pF

N

At 1 MHz, V

= 25°C; V

A

I

= 10 mA; T

F

= 0 V, VIN = 1.65 V 0.02 pF

N

= 11 V, V

CC

= 0 V, VIN = 2.5 V 53 pF

N

= 25°C 14.6 17.7 V

A

= 0 V 0.1 1.0

N

100 nA

100 nA

mA

V

ESD

ESD Protection

Peak Discharge Voltage at any
channel input, in system

Contact discharge per
IEC 61000−4−2 standard

V

LV Channel Clamp Voltage (Pin 1−3)

CL

Positive Transients
Negative Transients

R

DYN

Dynamic Resistance

LV Channel Positive Transients
LV Channel Negative Transients
HV Channel Positive Transients
HV Channel Negative Transients

1. All parameters specified at T

T

= 25°C ±8 (Pin 1−3)

A

T

= 25°C, I

A

I

= 1 A, tP = 8/20 mS

PP

Any I/O pin to Ground

= –40°C to +85°C unless otherwise noted.

A

= 1 A, tP = 8/20 mS

PP

kV

±15 (Pin 4)

V

+9.64
–1.75

W

0.72

0.59

1.20

0.36

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