ON Semiconductor BCW72LT1 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

  

NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

45 Vdc

Collector–Base Voltage V

CBO

50 Vdc

Emitter–Base Voltage V

EBO

5.0 Vdc

Collector Current — Continuous I

C

100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

(1)

TA = 25°C Derate above 25°C

P

D

225

1.8

mW

mW/°C

Thermal Resistance, Junction to Ambient

R

q

JA

556 °C/W

Total Device Dissipation

Alumina Substrate,

(2)

TA = 25°C

Derate above 25°C

P

D

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient

R

q

JA

417 °C/W

Junction and Storage Temperature TJ, T

stg

–55 to +150 °C

DEVICE MARKING

BCW72LT1 = K2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 2.0 mAdc, VEB = 0)

V

(BR)CEO

45 — — Vdc

Collector–Emitter Breakdown Voltage

(IC = 2.0 mAdc, VEB = 0)

V

(BR)CES

45 — — Vdc

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V

(BR)CBO

50 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V

(BR)EBO

5.0 — — Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100°C)

I

CBO

— —

100

10

nAdc

m

Adc

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Order this document

by BCW72LT1/D



SEMICONDUCTOR TECHNICAL DATA



1

2

3

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

 Motorola, Inc. 1996

COLLECTOR

3

1

BASE

2

EMITTER

BCW72LT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

h

FE

200 — 450

—

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 2.5 mAdc)

V

CE(sat)

— —

—

0.21

0.25 —

Vdc

Base–Emitter Saturation Voltage

(IC = 50 mAdc, IB = 2.5 mAdc)

V

BE(sat)

— 0.85 —

Vdc

Base–Emitter On Voltage

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

V

BE(on)

0.6 — 0.75

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

f

T

— 300 — MHz

Output Capacitance

(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)

C

obo

— — 4.0 pF

Input Capacitance

(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)

C

ibo

— 9.0 — pF

Noise Figure

(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

NF — — 10 dB

Figure 1. Turn–On Time Figure 2. Turn–Off Time

EQUIVALENT SWITCHING TIME TEST CIRCUITS

*Total shunt capacitance of test jig and connectors

10 k

+3.0 V

275

CS < 4.0 pF*

10 k

+3.0 V

275

CS < 4.0 pF*

1N916

300 ns

DUTY CYCLE = 2%

+10.9 V

–0.5 V

<1.0 ns

10 < t1 < 500 µs

DUTY CYCLE = 2%

+10.9 V

0

–9.1 V

<1.0 ns

t

1

TYPICAL NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

Figure 3. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

10

20

3.0

Figure 4. Noise Current

f, FREQUENCY (Hz)

2.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k

100

50 20

10

5.0

2.0

1.0

0.5

0.2

0.1

BANDWIDTH = 1.0 Hz

RS = 0

IC = 1.0 mA

100 µA

e

n

, NOISE VOLTAGE (nV)

I

n

, NOISE CURRENT (pA)

30 µA

BANDWIDTH = 1.0 Hz

RS

≈ ∞

10 µA

300 µA

IC = 1.0 mA

300 µA

100 µA

30 µA

10 µA

10 20 50 100 200 500 1 k 2 k 5 k 10 k

BCW72LT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NOISE FIGURE CONTOURS

(VCE = 5.0 Vdc, TA = 25°C)

Figure 5. Narrow Band, 100 Hz

IC, COLLECTOR CURRENT (µA)

500 k

Figure 6. Narrow Band, 1.0 kHz

IC, COLLECTOR CURRENT (µA)

10

2.0 dB

BANDWIDTH = 1.0 Hz

R

S

, SOURCE RESISTANCE (OHMS)

R

S

, SOURCE RESISTANCE (OHMS)

Figure 7. Wideband

IC, COLLECTOR CURRENT (µA)

10

10 Hz to 15.7 kHz

R

S

, SOURCE RESISTANCE (OHMS)

Noise Figure is defined as:

NF+20 log

10

ǒ

e

n

2

)

4KTRS)

I

n

2

R

S

2

4KTR

S

Ǔ

1ń2

= Noise Voltage of the T ransistor referred to the input. (Figure 3) = Noise Current of the Transistor referred to the input. (Figure 4) = Boltzman’s Constant (1.38 x 10

–23

j/°K) = Temperature of the Source Resistance (°K) = Source Resistance (Ohms)

e

n

I

n

K T R

S

3.0 dB

4.0 dB

6.0 dB

10 dB

50

100

200

500

1 k

10 k

5 k

20 k

50 k

100 k

200 k

2 k

20 30 50 70 100 200 300 500 700 1 k 10 20 30 50 70 100 200 300 500 700 1 k

500 k

100

200

500

1 k

10 k

5 k

20 k

50 k

100 k

200 k

2 k

1 M

500 k

50

100

200

500

1 k

10 k

5 k

20 k

50 k

100 k

200 k

2 k

20 30 50 70 100 200 300 500 700 1 k

BANDWIDTH = 1.0 Hz

1.0 dB

2.0 dB

3.0 dB

5.0 dB

8.0 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

8.0 dB