BCW72LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
h
FE
200 — 450
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 50 mAdc, IB = 2.5 mAdc)
V
CE(sat)
—
—
—
0.21
0.25
—
Vdc
Base–Emitter Saturation Voltage
(IC = 50 mAdc, IB = 2.5 mAdc)
V
BE(sat)
— 0.85 —
Vdc
Base–Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
V
BE(on)
0.6 — 0.75
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
f
T
— 300 — MHz
Output Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
C
obo
— — 4.0 pF
Input Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
C
ibo
— 9.0 — pF
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz)
NF — — 10 dB
Figure 1. Turn–On Time Figure 2. Turn–Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
CS < 4.0 pF*
10 k
+3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
–0.5 V
<1.0 ns
10 < t1 < 500 µs
DUTY CYCLE = 2%
+10.9 V
0
–9.1 V
<1.0 ns
t
1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100 µA
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
30 µA
BANDWIDTH = 1.0 Hz
RS
≈ ∞
10 µA
300 µA
IC = 1.0 mA
300 µA
100 µA
30 µA
10 µA
10 20 50 100 200 500 1 k 2 k 5 k 10 k