ON Semiconductor BCP53 Technical data

BCP53 Series

PNP Silicon
Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT‐223 package
which is designed for medium power surface mount applications.

•High Current: 1.5 Amps

•NPN Complement is BCP56

•The SOT‐223 Package can be soldered using wave or reflow. The

formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die

•Device Marking:

BCP53T1 = AH
BCP53-10T1 = AH-10
BCP53-16T1 = AH-16

•Pb-Free Packages are Available

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MEDIUM POWER HIGH

CURRENT SURFACE MOUNT

PNP TRANSISTORS

COLLECTOR 2,4

BASE

1

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Collector‐Emitter Voltage V

Collector‐Base Voltage V

Emitter‐Base Voltage V

Collector Current I

Total Power Dissipation

@ TA = 25°C (Note 1.)
Derate above 25°C

Operating and Storage

Temperature Range

= 25°C unless otherwise noted)

C

CEO

CBO

EBO

C

P

D

TJ, T

stg

-80 Vdc

-100 Vdc

-5.0 Vdc

1.5 Adc

1.5
12

-65 to
+150

Watts

mW/°C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Ambient
(surface mounted)

Lead Temperature for Soldering,

0.0625″ from case

Time in Solder Bath

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

R

θ

JA

T

L

83.3 °C/W

260

10

°C

Sec

EMITTER 3

MARKING DIAGRAM

4

1

2

3

SOT-223

CASE 318E

STYLE 1

A = Assembly Location
Y = Year
W = Work Week
XXXXX = Specific Device Code
G = Pb-Free Package

(Note: Microdot may be in either location)

AYW

XXXXXG

G

1

ORDERING INFORMATION

Device Package Shipping

BCP53T1 SOT-223

BCP53T1G SOT-223

(Pb-Free)

BCP53-10T1 SOT-223 1000/Tape & Reel

BCP53-10T1G SOT-223

(Pb-Free)

BCP53-16T1 SOT-223 1000/Tape & Reel

BCP53-16T1G SOT-223

(Pb-Free)

BCP53-16T3 SOT-223 4000/Tape & Reel

BCP53-16T3G SOT-223

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1000/Tape & Reel

1000/Tape & Reel

1000/Tape & Reel

1000/Tape & Reel

4000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2008

February, 2008 - Rev. 6

1 Publication Order Number:

BCP53T1/D

BCP53 Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector‐Base Breakdown Voltage (IC = -100 μAdc, IE = 0) V

Collector‐Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V

Collector‐Emitter Breakdown Voltage (IC = -100 μAdc, RBE = 1.0 kohm) V

Emitter‐Base Breakdown Voltage (IE = -10 μAdc, IC = 0) V

Collector‐Base Cutoff Current (VCB = -30 Vdc, IE = 0) I

Emitter‐Base Cutoff Current (VEB = -5.0 Vdc, IC = 0) I

ON CHARACTERISTICS

DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) All Part Types

(IC = -150 mAdc, VCE = -2.0 Vdc) BCP53

BCP53-10
BCP53-16

(IC = -500 mAdc, VCE = -2.0 Vdc) All Part Types

Collector‐Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) V

Base‐Emitter On Voltage (IC = -500 mAdc, VCE = -2.0 Vdc) V

DYNAMIC CHARACTERISTICS

Current‐Gain - Bandwidth Product

(IC = -10 mAdc, VCE = -5.0 Vdc, f = 35 MHz)

(BR)CBO

(BR)CEO

(BR)CER

(BR)EBO

CBO

EBO

h

FE

CE(sat)

BE(on)

f

T

-100 - - Vdc

-80 - - Vdc

-100 - - Vdc

-5.0 - - Vdc

- - -100 nAdc

- - -10 μAdc

25
40
63

100

25

-

-

-

-

-

­250
160
250

-

-

- - -0.5 Vdc

- - -1.0 Vdc

- 50 - MHz

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BCP53 Series

TYPICAL CHARACTERISTICS

2.0
IC/IB = 10 BCP53, -10, -16

1.8

1.6

1.4

1.2

1.0

0.8

0.6

, COLLECTOR EMITTER

0.4

SATURATION VOLTAGE (V)

ce(sat)

V

0.2

0

IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (A)

+150°C

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

180

160

140

120

100

80

60

, DC CURRENT GAIN

FE

40

h

20

0

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

150°C, 2 V

25°C, 5 V

25°C, 2 V

-55°C, 5 V

-55°C, 2 V

150°C, 5 V

Figure 3. DC Current Gain vs. Collector

Current (BCP53-10)

-55°C

+25°C

200

180

160

140

120

100

80

60

, DC CURRENT GAIN

FE

h

40

20

1010.10.010.001

300

250

200

150

100

, DC CURRENT GAIN

FE

h

50

1010.10.010.001

150°C, 5 V

150°C, 2 V

25°C, 5 V

25°C, 2 V

-55°C, 5 V

-55°C, 2 V

0

1010.10.010.001

Figure 2. DC Current Gain vs. Collector

Current (BCP53)

150°C, 5 V

150°C, 2 V

25°C, 5 V

25°C, 2 V

-55°C, 5 V

-55°C, 2 V

0

1010.10.010.001

Figure 4. DC Current Gain vs. Collector

Current (BCP53-16)

1.2
IC/IB = 10 BCP53, -10

1.1

1.0

0.9

-55°C

0.8

, BASE EMITTER

0.7

+25°C

0.6

be(sat)

V

SATURATION VOLTAGE (V)

0.5
+150°C

0.4

IC, COLLECTOR CURRENT (A)

Figure 5. BCP53, -10 Base Emitter Saturation

Voltage vs. Collector Current

1.2

1.1

1.0

0.9

0.8

, BASE EMITTER

0.7

0.6

be(sat)

V

SATURATION VOLTAGE (V)

0.5

1010.10.010.001

0.4

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IC/IB = 10 BCP53 -16

-55°C

+25°C

+150°C

1010.10.010.001

IC, COLLECTOR CURRENT (A)

Figure 6. BCP53-16 Base Emitter Saturation

Voltage vs. Collector Current

BCP53 Series

TYPICAL CHARACTERISTICS

1.2

Vce = 2 V

1.1

1.0

0.9

-55°C

0.8

0.7

VOLTAGE (V)

+25°C

0.6

, BASE EMITTER TURN-ON

0.5

be(on)

0.4

V

0.3

+150°C

BCP53, -10

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 7. BCP53, -10 Base Emitter Turn-On

Voltage vs. Collector Current V

1.0
BCP53, -10, -16

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

, COLLECTOR-EMITTER VOLTAGE (V)

0

ce

V

IC = 500 mA

IC = 100 mA

Ib, BASE CURRENT (A) VOLTAGE (V)

Figure 9. BCP53, -10, -16 Saturation Region Figure 10. Input Capacitance

BE(on)

IC = 1.5 AIC = 1.0 A

1.2

1.1

1.0

0.9

0.8

0.7

0.6

, BASE EMITTER

0.5

be(sat)

V

0.4

SATURATION VOLTAGE (V)

0.3

1010.10.010.001

10.10.010.001

0.2

110

100

90

80

70

60

CAPACITANCE (pF)

50

40

Vce = 2 V

-55°C

+25°C

+150°C

BCP53 -16

Figure 8. BCP53-16 Base Emitter Turn-On

Voltage vs. Collector Current

BCP53-10

BCP53

BCP53-16

1010.10.010.001

543210

25

20

15

10

CAPACITANCE (pF)

BCP53-16

5

0

BCP53-10

10

1

BCP53

CONTINUOUS THERMAL LIMIT

0.1

Ic, COLLECTOR CURRENT (A)

12 16 18

VOLTAGE (V) Vce, COLLECTOR EMITTER VOLTAGE (V)

20141086420

SINGLE PULSE TEST AT T

0.01

100 ms

amb

Figure 11. Output Capacitance Figure 12. Standard Operating Area

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4

10 ms

1 ms1 s

= 25°C

1001010.1

BCP53 Series

PACKAGE DIMENSIONS

0.08 (0003)

H

e1

E

A1

D

b1

4

123

e

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

E

DIMAMIN NOM MAX MIN

A1 0.02 0.06 0.10 0.001

b

MILLIMETERS

1.50 1.63 1.75 0.060

INCHES

b

C

A

L1

SOLDERING FOOTPRINT

3.8

0.15

2.0

0.079

2.0

0.079

1.5

0.059

2.3

0.091

2.3

0.091

SCALE 6:1

6.3

0.248

mm

ǒ

inches

Ǔ

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