ON Semiconductor BCP53 Technical data

BCP53 Series

PNP Silicon Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT‐223 package which is designed for medium power surface mount applications.

•High Current: 1.5 Amps

•NPN Complement is BCP56

•The SOT‐223 Package can be soldered using wave or reflow. The

formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die

•Device Marking:

BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16

•Pb-Free Packages are Available

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MEDIUM POWER HIGH

CURRENT SURFACE MOUNT

PNP TRANSISTORS

COLLECTOR 2,4

BASE

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Collector‐Emitter Voltage V

Collector‐Base Voltage V

Emitter‐Base Voltage V

Collector Current I

Total Power Dissipation

@ TA = 25°C (Note 1.) Derate above 25°C

Operating and Storage

Temperature Range

= 25°C unless otherwise noted)

CEO

CBO

EBO

TJ, T

stg

-80 Vdc

-100 Vdc

-5.0 Vdc

1.5 Adc

1.5 12

-65 to +150

Watts

mW/°C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Ambient (surface mounted)

Lead Temperature for Soldering,

0.0625″ from case

Time in Solder Bath

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

83.3 °C/W

260

°C

Sec

EMITTER 3

MARKING DIAGRAM

SOT-223

CASE 318E

STYLE 1

A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb-Free Package

(Note: Microdot may be in either location)

AYW

XXXXXG

ORDERING INFORMATION

Device Package Shipping

BCP53T1 SOT-223

BCP53T1G SOT-223

(Pb-Free)

BCP53-10T1 SOT-223 1000/Tape & Reel

BCP53-10T1G SOT-223

(Pb-Free)

BCP53-16T1 SOT-223 1000/Tape & Reel

BCP53-16T1G SOT-223

(Pb-Free)

BCP53-16T3 SOT-223 4000/Tape & Reel

BCP53-16T3G SOT-223

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1000/Tape & Reel

4000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2008

February, 2008 - Rev. 6

1 Publication Order Number:

BCP53T1/D

BCP53 Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector‐Base Breakdown Voltage (IC = -100 μAdc, IE = 0) V

Collector‐Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V

Collector‐Emitter Breakdown Voltage (IC = -100 μAdc, RBE = 1.0 kohm) V

Emitter‐Base Breakdown Voltage (IE = -10 μAdc, IC = 0) V

Collector‐Base Cutoff Current (VCB = -30 Vdc, IE = 0) I

Emitter‐Base Cutoff Current (VEB = -5.0 Vdc, IC = 0) I

ON CHARACTERISTICS

DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) All Part Types

(IC = -150 mAdc, VCE = -2.0 Vdc) BCP53

BCP53-10 BCP53-16

(IC = -500 mAdc, VCE = -2.0 Vdc) All Part Types

Collector‐Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) V

Base‐Emitter On Voltage (IC = -500 mAdc, VCE = -2.0 Vdc) V

DYNAMIC CHARACTERISTICS

Current‐Gain - Bandwidth Product

(IC = -10 mAdc, VCE = -5.0 Vdc, f = 35 MHz)

(BR)CBO

(BR)CEO

(BR)CER

(BR)EBO

CBO

EBO

CE(sat)

BE(on)

-100 - - Vdc

-80 - - Vdc

-100 - - Vdc

-5.0 - - Vdc

- - -100 nAdc

- - -10 μAdc

25 40 63

100

250 160 250

- - -0.5 Vdc

- - -1.0 Vdc

- 50 - MHz

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