ON Semiconductor BC847BPDXV6T1-D Service Manual
BC847BPDXV6T1,
BC847BPDXV6T5
Dual General Purpose
Transistor
NPN/PNP Dual (Complementary)
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
• Lead−Free Solder Plating
MAXIMUM RATINGS − NPN
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current −
Continuous
CEO
CBO
EBO
I
C
MAXIMUM RATINGS − PNP
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current −
Continuous
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously . If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
CEO
CBO
EBO
I
C
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
= 25°C
A
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
Symbol Max Unit
P
D
R
q
JA
Symbol Max Unit
P
D
R
q
JA
TJ, T
stg
45 V
50 V
6.0 V
100 mAdc
−45 V
−50 V
−5.0 V
−100 mAdc
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55 to +150 °C
mW
mW/°C
°C/W
mW
mW/°C
°C/W
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(3)
Q
1
(4) (5) (6)
BC847BPDX6T1
4
5
6
2
1
SOT−563
CASE 463A
PLASTIC
(1)(2)
Q
2
3
MARKING DIAGRAM
4F MG
G
1
4F = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BC847BPDXV6T1 SOT−563 4 mm pitch
BC847BPDXV6T1G SOT−563
(Pb−Free)
BC847BPDXV6T5 SOT−563 4 mm pitch
BC847BPDXV6T5G SOT−563
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
4000/Tape & Reel
2 mm pitch
4000/Tape & Reel
8000/Tape & Reel
2 mm pitch
8000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 1
1 Publication Order Number:
BC847BPDXV6T1/D
BC847BPDXV6T1, BC847BPDXV6T5
ELECTRICAL CHARACTERISTICS (NPN) (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= 10 mA)
C
Collector−Emitter Breakdown Voltage
(I
= 10 μA, VEB = 0)
C
Collector−Base Breakdown Voltage
(I
= 10 mA)
C
Emitter−Base Breakdown Voltage
(I
= 1.0 mA)
E
Collector Cutoff Current (VCB = 30 V)
(V
= 30 V, TA = 150°C)
CB
ON CHARACTERISTICS
DC Current Gain
(I
= 10 μA, VCE = 5.0 V)
C
= 2.0 mA, VCE = 5.0 V)
(I
C
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base−Emitter Voltage (I
= 10 mA, VCE = 5.0 V)
C
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
C
Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Noise Figure
(I
= 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
C
Symbol Min Typ Max Unit
V
(BR)CEO
45 − −
V
(BR)CES
50 − −
V
(BR)CBO
50 − −
V
(BR)EBO
6.0 − −
I
V
CE(sat)
V
BE(sat)
V
BE(on)
CBO
h
FE
f
T
obo
NF
−
−
−
200
−
−
−
−
580
−
−
−
150
290
−
−
0.7
0.9
660
−
15
5.0
−
475
0.25
0.6
−
−
700
770
nA
μA
mV
100 − − MHz
− − 4.5 pF
dB
− − 10
V
V
V
V
−
V
V
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BC847BPDXV6T1, BC847BPDXV6T5
ELECTRICAL CHARACTERISTICS (PNP) (T
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= −10 mA)
C
Collector−Emitter Breakdown Voltage
(I
= −10 μA, VEB = 0)
C
Collector−Base Breakdown Voltage
(I
= −10 mA)
C
Emitter−Base Breakdown Voltage
(I
= −1.0 mA)
E
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (V
= −30 V, TA = 150°C)
CB
ON CHARACTERISTICS
DC Current Gain
(I
= −10 μA, VCE = −5.0 V)
C
= −2.0 mA, VCE = −5.0 V)
(I
C
Collector−Emitter Saturation Voltage
(I
= −10 mA, IB = −0.5 mA)
C
= −100 mA, IB = −5.0 mA)
(I
C
Base−Emitter Saturation Voltage
(I
= −10 mA, IB = −0.5 mA)
C
= −100 mA, IB = −5.0 mA)
(I
C
Base−Emitter On Voltage
(I
= −2.0 mA, VCE = −5.0 V)
C
= −10 mA, VCE = −5.0 V)
(I
C
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
C
Output Capacitance
(V
= −10 V, f = 1.0 MHz)
CB
Noise Figure
(I
= −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kΩ,
C
f = 1.0 kHz, BW = 200 Hz)
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
V
(BR)CEO
−45 − −
V
(BR)CES
−50 − −
V
(BR)CBO
−50 − −
V
(BR)EBO
−5.0 − −
I
CBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
C
FE
f
T
ob
−
−
−
200
−
−
−
−
−0.6
−
−
−
150
290
−
−
−0.7
−0.9
−
−
−15
−4.0
−
475
−0.3
−0.65
−
−
−0.75
−0.82
nA
μA
100 − − MHz
− − 4.5 pF
NF − − 10 dB
V
V
V
V
−
V
V
V
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