ON Semiconductor BC847BPDXV6T1-D Service Manual

BC847BPDXV6T1,
BC847BPDXV6T5

Dual General Purpose
Transistor

NPN/PNP Dual (Complementary)

This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.

• Lead−Free Solder Plating

MAXIMUM RATINGS − NPN

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current −

Continuous

CEO
CBO
EBO

I

C

MAXIMUM RATINGS − PNP

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current −

Continuous

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously . If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

CEO
CBO
EBO

I

C

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation TA = 25°C

Derate above 25°C

Thermal Resistance −

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation

T

= 25°C

A

Derate above 25°C

Thermal Resistance −

Junction-to-Ambient

Junction and Storage

Temperature Range

1. FR−4 @ Minimum Pad

Symbol Max Unit

P

D

R

q

JA

Symbol Max Unit

P

D

R

q

JA

TJ, T

stg

45 V
50 V

6.0 V

100 mAdc

−45 V

−50 V

−5.0 V

−100 mAdc

357

(Note 1)

2.9

(Note 1)

350

(Note 1)

500

(Note 1)

4.0

(Note 1)

250

(Note 1)

−55 to +150 °C

mW

mW/°C

°C/W

mW

mW/°C

°C/W

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(3)

Q

1

(4) (5) (6)

BC847BPDX6T1

4

5

6

2

1

SOT−563

CASE 463A

PLASTIC

(1)(2)

Q

2

3

MARKING DIAGRAM

4F MG

G

1

4F = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

BC847BPDXV6T1 SOT−563 4 mm pitch

BC847BPDXV6T1G SOT−563

(Pb−Free)

BC847BPDXV6T5 SOT−563 4 mm pitch

BC847BPDXV6T5G SOT−563

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

4000/Tape & Reel

2 mm pitch

4000/Tape & Reel

8000/Tape & Reel

2 mm pitch

8000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2005

September, 2005 − Rev. 1

1 Publication Order Number:

BC847BPDXV6T1/D

BC847BPDXV6T1, BC847BPDXV6T5

ELECTRICAL CHARACTERISTICS (NPN) (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

= 10 mA)

C

Collector−Emitter Breakdown Voltage

(I

= 10 μA, VEB = 0)

C

Collector−Base Breakdown Voltage

(I

= 10 mA)

C

Emitter−Base Breakdown Voltage

(I

= 1.0 mA)

E

Collector Cutoff Current (VCB = 30 V)

(V

= 30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain

(I

= 10 μA, VCE = 5.0 V)

C

= 2.0 mA, VCE = 5.0 V)

(I

C

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector−Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base−Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base−Emitter Voltage (I

= 10 mA, VCE = 5.0 V)

C

SMALL− SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

C

Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Noise Figure

(I

= 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

C

Symbol Min Typ Max Unit

V

(BR)CEO

45 − −

V

(BR)CES

50 − −

V

(BR)CBO

50 − −

V

(BR)EBO

6.0 − −

I

V

CE(sat)

V

BE(sat)

V

BE(on)

CBO

h

FE

f

T

obo

NF

−

−

−

200

−

−

−

−

580

−

−

−

150
290

−

−

0.7

0.9

660

−

15

5.0

−

475

0.25

0.6

−

−

700
770

nA
μA

mV

100 − − MHz

− − 4.5 pF
dB

− − 10

V

V

V

V

−

V

V

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2

BC847BPDXV6T1, BC847BPDXV6T5

ELECTRICAL CHARACTERISTICS (PNP) (T

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

= −10 mA)

C

Collector−Emitter Breakdown Voltage

(I

= −10 μA, VEB = 0)

C

Collector−Base Breakdown Voltage

(I

= −10 mA)

C

Emitter−Base Breakdown Voltage

(I

= −1.0 mA)

E

Collector Cutoff Current (VCB = −30 V)

Collector Cutoff Current (V

= −30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain

(I

= −10 μA, VCE = −5.0 V)

C

= −2.0 mA, VCE = −5.0 V)

(I

C

Collector−Emitter Saturation Voltage

(I

= −10 mA, IB = −0.5 mA)

C

= −100 mA, IB = −5.0 mA)

(I

C

Base−Emitter Saturation Voltage

(I

= −10 mA, IB = −0.5 mA)

C

= −100 mA, IB = −5.0 mA)

(I

C

Base−Emitter On Voltage

(I

= −2.0 mA, VCE = −5.0 V)

C

= −10 mA, VCE = −5.0 V)

(I

C

SMALL− SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

= −10 mA, VCE = −5.0 Vdc, f = 100 MHz)

C

Output Capacitance

(V

= −10 V, f = 1.0 MHz)

CB

Noise Figure

(I

= −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kΩ,

C

f = 1.0 kHz, BW = 200 Hz)

= 25°C unless otherwise noted)

A

Symbol Min Typ Max Unit

V

(BR)CEO

−45 − −

V

(BR)CES

−50 − −

V

(BR)CBO

−50 − −

V

(BR)EBO

−5.0 − −

I

CBO

h

V

CE(sat)

V

BE(sat)

V

BE(on)

C

FE

f

T

ob

−

−

−

200

−

−

−

−

−0.6

−

−

−

150
290

−

−

−0.7

−0.9

−

−

−15

−4.0

−

475

−0.3

−0.65

−

−

−0.75

−0.82

nA
μA

100 − − MHz

− − 4.5 pF

NF − − 10 dB

V

V

V

V

−

V

V

V

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3

BC847BPDXV6T1, BC847BPDXV6T5

TYPICAL NPN CHARACTERISTICS

2.0

1.5

1.0

0.8

0.6

0.4

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

0.2 0.5 1.0 10 20

2.0 5.0

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

2.0

1.6

1.2
IC =

10 mA

0.8

IC = 50 mA IC = 100 mA

IC =

20 mA

TA = 25°C

IC = 200 mA

VCE = 10 V
T

= 25°C

A

50

100

200

V, VOLTAGE (VOLTS)

1.0
TA = 25°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.2 0.5 1.0 10 20

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

2.0

IC, COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” Voltages

1.0

−55°C to +125°C

1.2

1.6

2.0

2.4

50

307.05.03.00.70.30.1

10070

0.4

, COLLECTOR−EMITTER VOLTAGE (V)

CE

V

0.02 1.0

0.1

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

0.4 0.6 1.0 10 20

0.8 4.0 8.0

C

ib

C

ob

2.0 6.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

TA = 25°C

10020

2.8

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

0.2 1.0

IC, COLLECTOR CURRENT (mA)

10 100

Figure 4. Base−Emitter Temperature Coefficient

400

300

200

100

80

60

40

30

20

T

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

40

0.7 1.0 10 202.0

IC, COLLECTOR CURRENT (mAdc)

VCE = 10 V
T

= 25°C

A

307.05.03.00.5

50

Figure 6. Current−Gain − Bandwidth Product

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4

BC847BPDXV6T1, BC847BPDXV6T5

TYPICAL PNP CHARACTERISTICS

2.0

1.5

1.0

0.7

0.5

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

−2.0

−1.6

−1.2

−0.8

−0.4

, COLLECTOR−EMITTER VOLTAGE (V)

CE

V

VCE = −10 V
T

= 25°C

A

−0.2

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1

IC, COLLECTOR CURRENT (mAdc)

Figure 7. Normalized DC Current Gain

TA = 25°C

−10 mA

IC = −20 mA

−0.02 −1.0

−0.1

IB, BASE CURRENT (mA)

IC = −200 mAIC = −50 mAIC =

IC = −100 mA

−100−20

V, VOLTAGE (VOLTS)

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

−1.0

−0.9

−0.8

−0.7

−0.6

−0.5

−0.4

−0.3

−0.2

−0.1

1.0

1.2

1.6

2.0

2.4

2.8

TA = 25°C

V

@ IC/IB = 10

BE(sat)

V

@ VCE = −10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

0

−0.2 −0.5

−1.0

−2.0 −5.0

IC, COLLECTOR CURRENT (mAdc)

−10

Figure 8. “Saturation” and “On” Voltages

−55°C to +125°C

−0.2

−1.0

IC, COLLECTOR CURRENT (mA)

−10 −100

−20 −50

−100

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

−0.4

Figure 9. Collector Saturation Region

C

ib

TA = 25°C

C

ob

−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40

VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitances

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Figure 10. Base−Emitter Temperature

Coefficient

400

300

200

150

100

80

60

40

30

20

T

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

−0.5

−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50

IC, COLLECTOR CURRENT (mAdc)

VCE = −10 V
T

= 25°C

A

Figure 12. Current−Gain − Bandwidth Product

5

BC847BPDXV6T1, BC847BPDXV6T5

INFORMATION FOR USING THE SOT−563 SURFACE MOUNT PACKAGE

e

n

e

s

g

-

n

s

e

.

-

e

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection

1.35

interface between the board and the package. With th
correct pad geometry, the packages will self align whe
subjected to a solder reflow process.

0.3

0.45

1.0

0.50.5

Dimensions in mm

SOT−563

SOT−563 POWER DISSIPATION

The power dissipation of the SOT−563 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa­tion. Power dissipation for a surface mount device is deter­mined by T
of the die, R
junction to ambient, and the operating temperature, T

, the maximum rated junction temperature

J(max)

, the thermal resistance from the device

JA

θ

A

Using the values provided on the data sheet for the
SOT−563 package, P

can be calculated as follows:

D

T

− T

PD =

J(max)

R

A

θ

JA

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T

of 25°C,

A

one can calculate the power dissipation of the device which
in this case is 150 milliwatts.

The melting temperature of solder is higher than th
rated temperature of the device. When the entire device i
heated to a high temperature, failure to complete solderin
within a short time could result in device failure. There
fore, the following items should always be observed i
order to minimize the thermal stress to which the device

.

are subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of th

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.

SOLDERING PRECAUTIONS

• The soldering temperature and time shall not exceed

150°C − 25°C

PD =

833°C/W

= 150 milliwatts

The 833°C/W for the SOT−563 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 150 milli­watts. There are other alternatives to achieving higher
power dissipation from the SOT−563 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad

®

. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause exces
sive thermal shock and stress which can result in damag

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6

D

−X−

6

12 3

e

45

b

0.08 (0.003) X

E

−Y−

6 5 PL

BC847BPDXV6T1, BC847BPDXV6T5

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

A

L

H

E

C

M

Y

SOLDERING FOOTPRINT*

0.3

0.0118

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.

DIM MIN NOM MAX

A 0.50 0.55 0.60
b 0.17 0.22 0.27
C

0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70
E 1.10 1.20 1.30
e 0.5 BSC
L 0.10 0.20 0.30

H

1.50 1.60 1.70

E

MILLIMETERS

INCHES

MIN NOM MAX

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

0.45

0.0177

1.0

1.35

0.0394

0.0531

0.5

0.5

0.0197

0.0197

mm

ǒ

SCALE 20:1

inches

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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7

BC847BPDXV6T1, BC847BPDXV6T5

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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For additional information, please contact your
local Sales Representative.

BC847CBPDXV6T1/D

8