Datasheet BC846BPDW1T1-D Datasheet (ON Semiconductor)

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

Dual General Purpose Transistors

NPN/PNP Duals (Complementary)

http://onsemi.com

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS − NPN

Rating Symbol Value Unit

Collector-Emitter Voltage BC846

BC847 BC848

Collector-Base Voltage BC846

BC847 BC848

Emitter−Base Voltage V

Collector Current − Continuous I

MAXIMUM RATINGS − PNP

Rating Symbol Value Unit

Collector-Emitter Voltage BC846

BC847 BC848

Collector-Base Voltage BC846

BC847 BC848

Emitter−Base Voltage V

Collector Current − Continuous I

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

Per Device FR−5 Board (Note 1) TA = 25°C Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Junction and Storage Temperature TJ, T

1. FR−5 = 1.0 x 0.75 x 0.062 in.

V

R

CEO

CBO

EBO

C

CEO

CBO

EBO

C

P

D

q

JA

−55 to +150 °C

stg

65 45 30

80 50 30

6.0 V

100 mAdc

−65

−45

−30

−80

−50

−30

−5.0 V

−100 mAdc

380 250

3.0

328 °C/W

V

mW

mW/°C

(3)

Q

1

(4) (5) (6)

(1)(2)

Q

2

MARKING DIAGRAM

6

SOT−363

CASE 419B

1

(Note: Microdot may be in either location)

STYLE 1

XX = Device Code M = Date Code G = Pb−Free Package

XX

G

1

ORDERING INFORMATION

Device Package Shipping

BC846BPDW1T1G SOT−363

BC847BPDW1T1G SOT−363

BC847BPDW1T2G SOT−363

BC848CPDW1T1G SOT−363

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Mark

BB

BF

BL

(Pb−Free)

3000 /

Tape & Reel

3000 /

Tape & Reel

3000 /

Tape & Reel

3000 /

Tape & Reel

MG

†

October, 2009 − Rev. 5

1 Publication Order Number:

BC846BPDW1T1/D

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

ELECTRICAL CHARACTERISTICS (NPN) (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage

(I

= 10 mA) BC846 Series

C

Collector− Emitter Breakdown Voltage

(I

= 10 mA, VEB = 0) BC846 Series

C

Collector− Base Breakdown Voltage

(I

= 10 mA) BC846 Series

C

Emitter− Base Breakdown Voltage

(I

= 1.0 mA) BC846 Series

E

Collector Cutoff Current (VCB = 30 V)

(V

= 30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B

BC848C

BC847 Series BC848 Series

BC847B Only BC848 Series

BC847 Series BC848 Series

Symbol Min Typ Max Unit

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

65 45 30

80 50 30

6.0

5.0

−

150 270

15

5.0

−

nA mA

−

V

−

= 2.0 mA, VCE = 5.0 V) BC846B, BC847B

(I

C

BC848C

Collector− Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector− Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base − Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base − Emitter Voltage (I

= 10 mA, VCE = 5.0 V)

C

SMALL−SIGNAL CHARACTERISTICS

Current− Gain − Bandwidth Product

(I

= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

C

Output Capacitance (VCB = 10 V, f = 1.0 MHz) C

Noise Figure

(I

= 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

C

V

CE(sat)

V

BE(sat)

V

BE(on)

NF

f

T

obo

200 420

−

580

−

290 520

−

0.7

0.9

660

−

475 800

0.25

0.6

−

700 770

V

mV

100 − − MHz

− − 4.5 pF

dB

− − 10

http://onsemi.com

2

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

ELECTRICAL CHARACTERISTICS (PNP) (T

Characteristic

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage

(I

= −10 mA) BC846 Series

C

Collector− Emitter Breakdown Voltage

(I

= −10 mA, VEB = 0) BC846 Series

C

Collector− Base Breakdown Voltage

(I

= −10 mA) BC846 Series

C

Emitter− Base Breakdown Voltage

(I

= −1.0 mA) BC846 Series

E

Collector Cutoff Current (VCB = −30 V)

Collector Cutoff Current (V

= −30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mA, VCE = −5.0 V) BC846B, BC847B

BC848C

BC847 Series BC848 Series

= 25°C unless otherwise noted)

A

Symbol Min Ty p Max Unit

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

−65

−45

−30

−80

−50

−30

−80

−50

−30

−5.0

−

150 270

−

−15

−4.0

−

nA mA

V

−

= −2.0 mA, VCE = −5.0 V) BC846B, BC847B

(I

C

BC848C

Collector− Emitter Saturation Voltage

(I

= −10 mA, IB = −0.5 mA)

C

= −100 mA, IB = −5.0 mA)

(I

C

Base − Emitter Saturation Voltage

(I

= −10 mA, IB = −0.5 mA)

C

= −100 mA, IB = −5.0 mA)

(I

C

Base − Emitter On Voltage

(I

= −2.0 mA, VCE = −5.0 V)

C

= −10 mA, VCE = −5.0 V)

(I

C

SMALL−SIGNAL CHARACTERISTICS

Current− Gain − Bandwidth Product

(I

= −10 mA, VCE = −5.0 Vdc, f = 100 MHz)

C

Output Capacitance

(V

= −10 V, f = 1.0 MHz)

CB

Noise Figure

(I

= −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,

C

f = 1.0 kHz, BW = 200 Hz)

V

CE(sat)

V

BE(sat)

V

BE(on)

C

200 420

−

−0.6

−

f

T

ob

100 − − MHz

− − 4.5 pF

290 520

−

−0.7

−0.9

−

475 800

−0.3

−0.65

−

−0.75

−0.82

NF − − 10 dB

V

http://onsemi.com

3

VCE = 5 V T

= 25°C

A

2.0

1.0

0.5

, DC CURRENT GAIN (NORMALIZED)

0.2

FE

h

0.1 1.0

0.2

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

TYPICAL NPN CHARACTERISTICS − BC846

1.0

TA = 25°C

0.8 V

@ IC/IB = 10

BE(sat)

0.6 VBE @ VCE = 5.0 V

0.4

V, VOLTAGE (VOLTS)

0.2

V

@ IC/IB = 10

CE(sat)

10 100

IC, COLLECTOR CURRENT (mA)

0

0.2 1.0

0.5 2.0 5.0

IC, COLLECTOR CURRENT (mA)

10 200

20 50 100

Figure 1. DC Current Gain

2.0

1.6

20 mA

1.2

0.8

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0.05 0.2 0.5 2.0 5.0

0.02 1.0

0.1

50 mA

IC =

10 mA

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

40

20

10

Figure 2. “On” Voltage

-1.0

TA = 25°C

-1.4

100 mA

200 mA

10020

-1.8

-2.2

-2.6

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

-3.0

0.2 2.0

0.5 5.0 20

qVB for V

BE

1.0

IC, COLLECTOR CURRENT (mA)

-55°C to 125°C

10 200

50 100

Figure 4. Base−Emitter Temperature Coefficient

TA = 25°C

C

ib

500

200

100

VCE = 5 V T

= 25°C

A

6.0

C, CAPACITANCE (pF)

4.0

2.0

0.1 0.2 1.0 50

0.5 5.0 20

VR, REVERSE VOLTAGE (VOLTS)

C

ob

2.0 10

Figure 5. Capacitance

50

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT

100

http://onsemi.com

4

1.0 10 50

IC, COLLECTOR CURRENT (mA)

5.0

100

Figure 6. Current−Gain − Bandwidth Product

VCE = -5.0 V T

= 25°C

A

2.0

1.0

0.5

, DC CURRENT GAIN (NORMALIZED)

0.2

FE

h

-0.1 -1.0

-0.2

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

TYPICAL PNP CHARACTERISTICS — BC846

-1.0

TJ = 25°C

-2.0

IC, COLLECTOR CURRENT (AMP)

-10 -200

-5.0

-20

-50

-100

-0.8

-0.6

-0.4

V, VOLTAGE (VOLTS)

-0.2

0

-0.2 -1.0

V

@ IC/IB = 10

BE(sat)

VBE @ VCE = -5.0 V

V

@ IC/IB = 10

CE(sat)

-0.5 -2.0 -5.0

IC, COLLECTOR CURRENT (mA)

-20 -50 -100

-10 -200

Figure 7. DC Current Gain

-2.0

-1.6

IC =

-10 mA

-1.2

-0.8

-0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

T

= 25°C

J

-0.05 -0.2 -0.5 -2.0 -5.0

-0.02 -1.0

-20 mA

-0.1

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

40

20

C

ib

-50 mA

-100 mA

TJ = 25°C

-200 mA

-100-20

Figure 8. “On” Voltage

-1.0

-1.4

-1.8

-2.2

-2.6

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

-3.0

qVB for V

BE

-0.2 -2.0

-1.0

-0.5 -5.0 -20

IC, COLLECTOR CURRENT (mA)

-55°C to 125°C

-10 -200

Figure 10. Base−Emitter Temperature Coefficient

VCE = -5.0 V

500

200

-50 -100

10

8.0

6.0

C, CAPACITANCE (pF)

4.0

2.0

-0.1 -0.2 -1.0 -50

-0.5 -5.0 -20

-2.0 -10

VR, REVERSE VOLTAGE (VOLTS)

C

ob

Figure 11. Capacitance

100

50

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT

-100

http://onsemi.com

5

-1.0 -10

IC, COLLECTOR CURRENT (mA)

-100

Figure 12. Current−Gain − Bandwidth Product

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

TYPICAL NPN CHARACTERISTICS − BC847 SERIES & BC848 SERIES

2.0

1.5

1.0

0.8

0.6

0.4

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

0.2 0.5 1.0 10 20

2.0 5.0

IC, COLLECTOR CURRENT (mAdc)

Figure 13. Normalized DC Current Gain

2.0

1.6

1.2 IC =

10 mA

0.8

IC = 50 mA IC = 100 mA

IC =

20 mA

TA = 25°C

IC = 200 mA

VCE = 10 V T

= 25°C

A

50

100

200

V, VOLTAGE (VOLTS)

1.0 TA = 25°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.2 0.5 1.0 10 20

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

2.0

IC, COLLECTOR CURRENT (mAdc)

Figure 14. “Saturation” and “On” Voltages

1.0

-55°C to +125°C

1.2

1.6

2.0

2.4

50

307.05.03.00.70.30.1

10070

0.4

, COLLECTOR-EMITTER VOLTAGE (V)

CE

V

0.02 1.0

0.1

IB, BASE CURRENT (mA)

Figure 15. Collector Saturation Region

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

0.4 0.6 1.0 10 20

0.8 4.0 8.0

C

ib

C

ob

2.0 6.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 17. Capacitances

TA = 25°C

10020

2.8

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

0.2 1.0

IC, COLLECTOR CURRENT (mA)

10 100

Figure 16. Base−Emitter Temperature

Coefficient

400

300

200

100

80

60

40

30

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

40

0.7 1.0 10 202.0

IC, COLLECTOR CURRENT (mAdc)

VCE = 10 V T

= 25°C

A

307.05.03.00.5

50

Figure 18. Current−Gain − Bandwidth Product

http://onsemi.com

6

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

TYPICAL PNP CHARACTERISTICS — BC847 SERIES & BC848 SERIES

2.0

1.5

1.0

0.7

0.5

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

-2.0

-1.6

-1.2

-0.8

-0.4

, COLLECTOR-EMITTER VOLTAGE (V)

CE

V

VCE = -10 V T

= 25°C

A

-0.2

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1

IC, COLLECTOR CURRENT (mAdc)

Figure 19. Normalized DC Current Gain

TA = 25°C

-10 mA

IC = -20 mA

-0.02 -1.0

-0.1

IB, BASE CURRENT (mA)

IC = -200 mAIC = -50 mAIC =

IC = -100 mA

-100-20

V, VOLTAGE (VOLTS)

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

-1.0 TA = 25°C

-0.9

V

@ IC/IB = 10

-0.8

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

0

-0.2 -0.5

BE(sat)

V

@ VCE = -10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

-1.0

-2.0 -5.0

IC, COLLECTOR CURRENT (mAdc)

Figure 20. “Saturation” and “On” Voltages

1.0

-55°C to +125°C

1.2

1.6

2.0

2.4

2.8

-0.2

-1.0

IC, COLLECTOR CURRENT (mA)

-10

-20 -50

-10 -100

-100

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

-0.4

Figure 21. Collector Saturation Region

C

ib

TA = 25°C

C

ob

-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40

VR, REVERSE VOLTAGE (VOLTS)

Figure 23. Capacitances

http://onsemi.com

Figure 22. Base−Emitter Temperature

Coefficient

400

300

200

150

100

80

60

40

30

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

-0.5

-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50

IC, COLLECTOR CURRENT (mAdc)

VCE = -10 V T

= 25°C

A

Figure 24. Current−Gain − Bandwidth Product

7

1.0 D = 0.5

0.2

0.1

0.05

0.02

0.01

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

SINGLE PULSE

0.001

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

Z

(t) = r(t) R

q

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

1.00

10 100 1.0k 10k 100k

2

t, TIME (ms)

Figure 25. Thermal Response

JA

R

= 328°C/W MAX

q

JA

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

− TC = P

J(pk)

q

JA

(pk)

1

R

(t)

q

JC

1.0M

-200 1 s

-100

T

-50

TA = 25°C

= 25°C

J

BC558

-10

, COLLECTOR CURRENT (mA)

-5.0

C

I

-2.0

-1.0

BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

-5.0 -10 -30 -45 -65 -100

BC557 BC556

VCE, COLLECTOR-EMITTER VOLTAGE (V)

Figure 26. Active Region Safe Operating Area

3 ms

The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.

The data of Figure 26 is based upon T

= 150°C; T

J(pk)

or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T ≤ 150°C. T

may be calculated from the data in Figure

J(pk)

25. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.

C

http://onsemi.com

8

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

PACKAGE DIMENSIONS

SC−88/SOT−363/SC70−6

CASE 419B−02

ISSUE W

D

e

654

H

E

123

−E−

b

6 PL

MM

E0.2 (0.008)

A3

C

A

A1

L

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

H

STYLE 1:

PIN 1. EMITTER 2

0.20 REF 0.008 REF

2.00 2.10 2.20

E

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

ǒ

inches

mm

Ǔ

SC−88/SC70−6/SOT−363

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

http://onsemi.com

9

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local Sales Representative

BC846BPDW1T1/D

Datasheet BC846BPDW1T1-D Datasheet (ON Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual