ON Semiconductor BC846BPDW1T1-D Service Manual
BC846BPDW1T1G,
BC847BPDW1T1G,
BC848CPDW1T1G
Dual General Purpose
Transistors
NPN/PNP Duals (Complementary)
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These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS − NPN
Rating Symbol Value Unit
Collector-Emitter Voltage BC846
BC847
BC848
Collector-Base Voltage BC846
BC847
BC848
Emitter−Base Voltage V
Collector Current − Continuous I
MAXIMUM RATINGS − PNP
Rating Symbol Value Unit
Collector-Emitter Voltage BC846
BC847
BC848
Collector-Base Voltage BC846
BC847
BC848
Emitter−Base Voltage V
Collector Current − Continuous I
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Per Device
FR−5 Board (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
1. FR−5 = 1.0 x 0.75 x 0.062 in.
V
V
V
V
R
CEO
CBO
EBO
C
CEO
CBO
EBO
C
P
D
q
JA
−55 to +150 °C
stg
65
45
30
80
50
30
6.0 V
100 mAdc
−65
−45
−30
−80
−50
−30
−5.0 V
−100 mAdc
380
250
3.0
328 °C/W
V
V
V
V
mW
mW/°C
(3)
Q
1
(4) (5) (6)
(1)(2)
Q
2
MARKING
DIAGRAM
6
SOT−363
CASE 419B
1
(Note: Microdot may be in either location)
STYLE 1
XX = Device Code
M = Date Code
G = Pb−Free Package
XX
G
1
ORDERING INFORMATION
Device Package Shipping
BC846BPDW1T1G SOT−363
BC847BPDW1T1G SOT−363
BC847BPDW1T2G SOT−363
BC848CPDW1T1G SOT−363
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Mark
BB
BF
BF
BL
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
3000 /
Tape & Reel
3000 /
Tape & Reel
3000 /
Tape & Reel
3000 /
Tape & Reel
MG
†
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 5
1 Publication Order Number:
BC846BPDW1T1/D
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
ELECTRICAL CHARACTERISTICS (NPN) (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage
(I
= 10 mA) BC846 Series
C
Collector− Emitter Breakdown Voltage
(I
= 10 mA, VEB = 0) BC846 Series
C
Collector− Base Breakdown Voltage
(I
= 10 mA) BC846 Series
C
Emitter− Base Breakdown Voltage
(I
= 1.0 mA) BC846 Series
E
Collector Cutoff Current (VCB = 30 V)
(V
= 30 V, TA = 150°C)
CB
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B
BC848C
BC847 Series
BC848 Series
BC847B Only
BC848 Series
BC847 Series
BC848 Series
BC847 Series
BC848 Series
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
150
270
15
5.0
−
−
−
−
−
−
−
−
−
−
−
−
nA
mA
−
−
V
V
V
V
−
= 2.0 mA, VCE = 5.0 V) BC846B, BC847B
(I
C
BC848C
Collector− Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector− Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base − Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base − Emitter Voltage (I
= 10 mA, VCE = 5.0 V)
C
SMALL−SIGNAL CHARACTERISTICS
Current− Gain − Bandwidth Product
(I
= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
C
Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Noise Figure
(I
= 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
V
CE(sat)
V
BE(sat)
V
BE(on)
NF
f
T
obo
200
420
−
−
−
−
580
−
290
520
−
−
0.7
0.9
660
−
475
800
0.25
0.6
−
−
700
770
V
V
mV
100 − − MHz
− − 4.5 pF
dB
− − 10
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BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
ELECTRICAL CHARACTERISTICS (PNP) (T
Characteristic
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage
(I
= −10 mA) BC846 Series
C
Collector− Emitter Breakdown Voltage
(I
= −10 mA, VEB = 0) BC846 Series
C
Collector− Base Breakdown Voltage
(I
= −10 mA) BC846 Series
C
Emitter− Base Breakdown Voltage
(I
= −1.0 mA) BC846 Series
E
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (V
= −30 V, TA = 150°C)
CB
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V) BC846B, BC847B
BC848C
BC847 Series
BC848 Series
BC847 Series
BC848 Series
BC847 Series
BC848 Series
BC847 Series
BC848 Series
= 25°C unless otherwise noted)
A
Symbol Min Ty p Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
150
270
−
−
−
−
−
−
−
−
−
−
−
−
−15
−4.0
−
−
nA
mA
V
V
V
V
−
= −2.0 mA, VCE = −5.0 V) BC846B, BC847B
(I
C
BC848C
Collector− Emitter Saturation Voltage
(I
= −10 mA, IB = −0.5 mA)
C
= −100 mA, IB = −5.0 mA)
(I
C
Base − Emitter Saturation Voltage
(I
= −10 mA, IB = −0.5 mA)
C
= −100 mA, IB = −5.0 mA)
(I
C
Base − Emitter On Voltage
(I
= −2.0 mA, VCE = −5.0 V)
C
= −10 mA, VCE = −5.0 V)
(I
C
SMALL−SIGNAL CHARACTERISTICS
Current− Gain − Bandwidth Product
(I
= −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
C
Output Capacitance
(V
= −10 V, f = 1.0 MHz)
CB
Noise Figure
(I
= −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
C
f = 1.0 kHz, BW = 200 Hz)
V
CE(sat)
V
BE(sat)
V
BE(on)
C
200
420
−
−
−
−
−0.6
−
f
T
ob
100 − − MHz
− − 4.5 pF
290
520
−
−
−0.7
−0.9
−
−
475
800
−0.3
−0.65
−
−
−0.75
−0.82
NF − − 10 dB
V
V
V
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