Datasheet BC846BM3-D Datasheet (ON Semiconductor)

BC846BM3T5G

General Purpose Transistor

NPN Silicon

• Moisture Sensitivity Level: 1

• ESD Rating: Human Body Model: >4000 V

Machine Model: >400 V

• This is a Pb−Free Device

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

CEO

CBO

EBO

C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board

(Note 1)
TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction to Ambient (Note 1)

Total Device Dissipation

Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction to Ambient (Note 2)

Junction and Storage

Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. FR− 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

P

R

P

R

TJ, T

D

q

JA

D

q

JA

stg

65 Vdc

80 Vdc

6.0 Vdc

100 mAdc

265

2.1

470 °C/W

640

5.1

195 °C/W

−55 to
+150

mW

mW/°C

mW

mW/°C

°C

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COLLECTOR

3

1

BASE

2

EMITTER

MARKING
DIAGRAM

3

SOT−723

CASE 631AA

2

1

STYLE 1

1B = Specific Device Code
M = Date Code

1B M

ORDERING INFORMATION

Device Package Shipping

BC846BM3T5G SOT−723

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

8000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 1

1 Publication Order Number:

BC846BM3/D

BC846BM3T5G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

= 10 mA)

C

Collector−Emitter Breakdown Voltage

(I

= 10 mA, VEB = 0)

C

Collector−Base Breakdown Voltage

(I

= 10 mA)

C

Emitter−Base Breakdown Voltage

(I

= 1.0 mA)

E

Collector Cutoff Current (VCB = 30 V)

(V

= 30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain

(I

= 10 mA, VCE = 5.0 V)

C

= 2.0 mA, VCE = 5.0 V)

(I

C

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector−Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base −Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base −Emitter Voltage (IC = 1.0 mA, VCE = 5.0 V)

Base −Emitter Voltage (I
Base −Emitter Voltage (I

= 2.0 mA, VCE = 5.0 V)

C

= 10 mA, VCE = 5.0 V)

C

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

C

Output Capacitance

(V

= 10 V, f = 1.0 MHz)

CB

Noise Figure

(I

= 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

C

Symbol Min Typ Max Unit

V

(BR)CEO

65 − −

V

(BR)CES

80 − −

V

(BR)CBO

80 − −

V

(BR)EBO

6.0 − −

I

CBO

h

V

CE(sat)

V

BE(sat)

V

BE(on)

FE

f

T

−

−

−

200

−

−

−

−

550
580

−

−

−

150
290

−

−

0.7

0.9

645
660

−

15

5.0

−

450

0.25

0.6

−

−

700
700
770

nA
mA

mV

MHz

100 − −

C

obo

pF

− − 4.5

NF

dB

− − 10

V

V

V

V

−

V

V

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2

BC846BM3T5G

TYPICAL CHARACTERISTICS

2.0

1.5

1.0

0.8

0.6

0.4

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

0.2 0.5 1.0 10 20

2.0 5.0

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

2.0

1.6

1.2
IC =

10 mA

0.8

IC = 50 mA IC = 100 mA

IC =

20 mA

VCE = 10 V
T

= 25°C

A

50

IC = 200 mA

100

200

V, VOLTAGE (VOLTS)

1.0
TA = 25°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.2 0.5 1.0 10 20

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

2.0

IC, COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” Voltages

1.0

-55°C to +125°CTA = 25°C

1.2

1.6

2.0

2.4

50

307.05.03.00.70.30.1

10070

0.4

, COLLECTOR-EMITTER VOLTAGE (V)

CE

V

0.02 1.0

0.1

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

0.4 0.6 1.0 10 20

0.8 4.0 8.0

VR, REVERSE VOLTAGE (VOLTS)

C

ib

C

ob

2.0 6.0

Figure 5. Capacitances

TA = 25°C

10020

2.8

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

0.2 1.0

IC, COLLECTOR CURRENT (mA)

10 100

Figure 4. Base−Emitter Temperature Coefficient

400

300

200

100

80

60

40

30

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

40

0.7 1.0 10 202.0

IC, COLLECTOR CURRENT (mAdc)

VCE = 10 V
T

= 25°C

A

307.05.03.00.5

50

Figure 6. Current−Gain − Bandwidth Product

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3

VCE = 5 V
T

= 25°C

A

2.0

1.0

0.5

, DC CURRENT GAIN (NORMALIZED)

0.2

FE

h

0.1 1.0

0.2

TYPICAL CHARACTERISTICS

10 100

IC, COLLECTOR CURRENT (mA)

BC846BM3T5G

1.0

0.8

0.6

0.4

V, VOLTAGE (VOLTS)

0.2

0

0.2 1.0

TA = 25°C

V

@ IC/IB = 10

BE(sat)

VBE @ VCE = 5.0 V

V

@ IC/IB = 10

CE(sat)

0.5 2.0 5.0

IC, COLLECTOR CURRENT (mA)

10 200

20 50 100

Figure 7. DC Current Gain

2.0

1.6

20 mA

1.2

0.8

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0.05 0.2 0.5 2.0 5.0

0.02 1.0

0.1

50 mA

IC =

10 mA

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

40

20

10

Figure 8. “On” Voltage

-1.0

TA = 25°C

-1.4

100 mA

200 mA

10020

-1.8

-2.2

-2.6

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

-3.0

0.2 2.0

0.5 5.0 20

qVB for V

BE

-55°C to 125°C

1.0

IC, COLLECTOR CURRENT (mA)

10 200

50 100

Figure 10. Base−Emitter Temperature Coefficient

TA = 25°C

C

ib

500

200

100

VCE = 5 V
T

= 25°C

A

6.0

C, CAPACITANCE (pF)

4.0

2.0

0.1 0.2 1.0 50

0.5 5.0 20

VR, REVERSE VOLTAGE (VOLTS)

C

ob

2.0 10

Figure 11. Capacitance

50

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT

100

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4

1.0 10 50

IC, COLLECTOR CURRENT (mA)

5.0

100

Figure 12. Current−Gain − Bandwidth Product

b1

BC846BM3T5G

PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

−X−

D

3

1

2

e

−Y−

E

2X

b

X0.08 (0.0032) Y

A

H

L

E

C

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOLDERING FOOTPRINT*

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

DIM MIN NOM MAX

A 0.45 0.50 0.55
b 0.15 0.21 0.27

b1 0.25 0.31 0.37

C 0.07 0.12 0.17
D 1.15 1.20 1.25
E 0.75 0.80 0.85
e 0.40 BSC

H 1.15 1.20 1.25

E

L 0.15 0.20 0.25

INCHES

MIN NOM MAX

0.018 0.020 0.022

0.0059 0.0083 0.0106

0.010 0.012 0.015

0.0028 0.0047 0.0067

0.045 0.047 0.049

0.03 0.032 0.034

0.016 BSC

0.045 0.047 0.049

0.0059 0.0079 0.0098

0.40

0.0157

0.40

0.0157

1.0

0.039

0.40

0.0157

0.40

0.0157

0.40

0.0157

SCALE 20:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BC846BM3/D