ON Semiconductor BC846BM3-D Service Manual
BC846BM3T5G
General Purpose Transistor
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating: Human Body Model: >4000 V
Machine Model: >400 V
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2)
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
P
R
P
R
TJ, T
D
q
JA
D
q
JA
stg
65 Vdc
80 Vdc
6.0 Vdc
100 mAdc
265
2.1
470 °C/W
640
5.1
195 °C/W
−55 to
+150
mW
mW/°C
mW
mW/°C
°C
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COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
2
1
STYLE 1
1B = Specific Device Code
M = Date Code
1B M
ORDERING INFORMATION
Device Package Shipping
BC846BM3T5G SOT−723
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
8000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 1
1 Publication Order Number:
BC846BM3/D
BC846BM3T5G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= 10 mA)
C
Collector−Emitter Breakdown Voltage
(I
= 10 mA, VEB = 0)
C
Collector−Base Breakdown Voltage
(I
= 10 mA)
C
Emitter−Base Breakdown Voltage
(I
= 1.0 mA)
E
Collector Cutoff Current (VCB = 30 V)
(V
= 30 V, TA = 150°C)
CB
ON CHARACTERISTICS
DC Current Gain
(I
= 10 mA, VCE = 5.0 V)
C
= 2.0 mA, VCE = 5.0 V)
(I
C
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base −Emitter Voltage (IC = 1.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (I
Base −Emitter Voltage (I
= 2.0 mA, VCE = 5.0 V)
C
= 10 mA, VCE = 5.0 V)
C
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
C
Output Capacitance
(V
= 10 V, f = 1.0 MHz)
CB
Noise Figure
(I
= 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
Symbol Min Typ Max Unit
V
(BR)CEO
65 − −
V
(BR)CES
80 − −
V
(BR)CBO
80 − −
V
(BR)EBO
6.0 − −
I
CBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
f
T
−
−
−
200
−
−
−
−
550
580
−
−
−
150
290
−
−
0.7
0.9
645
660
−
15
5.0
−
450
0.25
0.6
−
−
700
700
770
nA
mA
mV
MHz
100 − −
C
obo
pF
− − 4.5
NF
dB
− − 10
V
V
V
V
−
V
V
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