BC489, BC489A
High Current Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
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COLLECTOR
1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Collector−Emitter Voltage V
Collector Current − Continuous I
Total Power Dissipation @ TA = 25°C
Derate above T
Total Power Dissipation @ TA = 25°C
Derate above T
Operating and Storage Junction
Temperature Range
= 25°C
A
= 25°C
A
TJ, T
CEO
CBO
EBO
C
P
D
P
D
stg
80 Vdc
80 Vdc
5.0 Vdc
0.5 Adc
625
5.0
1.5
12
−55 to +150 °C
mW
mW/°C
W
mW/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
TO−92
CASE 29
STYLE 17
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
BC
489x
AYWWG
G
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1 Publication Order Number:
489x = 489A
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BC489G TO−92
BC489RL1G TO−92
BC489AG TO−92
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
(Pb−Free)
(Pb−Free)
(Pb−Free)
5000 Units / Bulk
2000 / Tape & Reel
5000 Units / Bulk
†
BC489/D
BC489, BC489A
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
= 10 mAdc, IB = 0)
C
Collector−Base Breakdown Voltage
= 100 mAdc, IE = 0)
(I
C
Emitter−Base Breakdown Voltage
= 10 mAdc, IC = 0)
(I
E
Collector Cutoff Current
(V
= 60 V, IE = 0)
CB
ON CHARACTERISTICS
DC Current Gain
(I
= 10 mAdc, VCE = 2.0 Vdc)
C
(IC = 100 mAdc, VCE = 2.0 Vdc) BC489
(I
= 1.0 Adc, VCE = 5.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I
= 500 mAdc, IB = 50 mAdc)
C
= 1.0 Adc, IB = 100 mAdc)
(I
C
Collector−Emitter Saturation Voltage
(I
= 500 mAdc, IB = 50 mAdc)
C
= 1.0 Adc, IB = 100 mAdc) (Note 1)
(I
C
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
C
Output Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
Input Capacitance
(V
= 0.5 Vdc, IC = 0, f = 1.0 MHz)
EB
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
BC489A
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(sat)
f
C
C
FE
80 − −
Vdc
Vdc
80 − −
5.0 − − Vdc
nAdc
− − 100
−
40
60
100
15
−
−
160
−
−
400
250
−
Vdc
−
−
0.2
0.3
0.5
−
Vdc
−
−
T
ob
ib
− 200 − MHz
− 7.0 − pF
− 50 − pF
0.85
0.9
1.2
−
+10 V
0
5.0 ms
= 3.0 ns
t
r
TURN−ON TIME
V
in
5.0 mF
−1.0 V
100
100
V
CC
+40 V
R
L
R
B
OUTPUT
*CS < 6.0 pF
V
in
5.0 mF
TURN−OFF TIME
+V
BB
100
R
B
100
5.0 ms
= 3.0 ns
t
r
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All V oltage Polarities
Figure 1. Switching Time Test Circuits
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2
V
CC
+40 V
R
L
OUTPUT
*CS < 6.0 pF