ON Semiconductor BAV70M3 Users manual

BAV70M3

l

s

Dual Switching Diode
Common Cathode

The BAV70M3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for switching applications and is
housed in the SOT−723 surface mount package. This device is ideal
for low−power surface mount applications where board space is at a
premium.

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Features

• Reduces Board Space

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (EACH DIODE)

Rating

Reverse Voltage V
Forward Current I

Peak Forward Surge Current I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation

Alumina Substrate, (Note 2) T
Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Junction and Storage Temperature TJ, T

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

= 25°C

A

Symbol Value Unit

stg

100 Vdc
200 mAdc

500 mAdc

265

mW/°C

2.1

470 °C/W

640

5.1mWmW/°C

195 °C/W

−55 to
+150

mW

°C

R

F

FM(surge)

P

D

R

q

JA

P

D

R

q

JA

70 V

DUAL COMMON CATHODE

SWITCHING DIODES

1

ANODE

3

CATHODE

3

SOT−723

CASE 631AA

2

1

AL = Specific Device Code
M = Date Code

STYLE 3

ORDERING INFORMATION

Device Package Shipping

BAV70M3T5G SOT−723

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

(Pb−Free)

2

ANODE

MARKING
DIAGRAM

AL M

1

8000/Tape & Ree

†

© Semiconductor Components Industries, LLC, 2015

April, 2015 − Rev. 2

1

Publication Order Number:

BAV70M3/D

BAV70M3

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Each Diode)

A

Characteristic

Reverse Breakdown Voltage

(I

(BR)

Reverse Voltage Leakage Current (Note 3)

= 25 V, TJ = 150°C)

(V

R

(V

= 100 V)

R

(V

= 70 V, TJ = 150°C)

R

Diode Capacitance

= 0 V, f = 1.0 MHz)

(V

R

Forward Voltage

= 1.0 mA)

(I

F

(I

= 10 mA)

F

(I

= 50 mA)

F

(I

= 150 mA)

F

Reverse Recovery Time RL = 100 W

= IR = 10 mA, I

(I

F

= 1.0 mA) (Figure 1)

R(REC)

3. For each individual diode while second diode is unbiased.

= 100 mA)

Symbol Min Max Unit

V

(BR)

I

R

C

V

t

rr

D

F

100 − V

−

−

−

60

1.0

100

− 1.5 pF

mV

−

−

−

−

715

855
1000
1250

− 6.0 ns

mA

+10 V

50 W OUTPUT

PULSE

GENERATOR

820

W

I

2.0 k

100 mH

t

t

r

I

0.1 mF

F

p

10%

t

F

t

rr

t

0.1 mF

D.U.T.

50 W INPUT

SAMPLING

V

R

OSCILLOSCOPE

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. t

» t

p

rr

is equal to 10 mA.

R(peak)

90%

INPUT SIGNAL

= 1.0 mA

i

I

R

R(REC)

OUTPUT PULSE

= IR = 10 mA; MEASURED

(I

F

at i

= 1.0 mA)

R(REC)

Figure 1. Recovery Time Equivalent Test Circuit

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2

BAV70M3

Curves Applicable to Each Anode

I

, FORWARD CURRENT (mA)

0

100

TA = 125°C

10

1

0.1

F

0.01

TA = 55°C

TA = 25°C

TA = 150°C

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

TA = 85°C

V

, FORWARD VOLTAGE (V)

F

TA = −40°C

TA = −55°C

Figure 2. Forward Voltage Figure 3. Leakage Current

0.6

0.58

0.56

0.54

10

TA = 150°C

1.0

0.1

0.01

, REVERSE CURRENT (mA)

R

I

0.001
0 1020304050607

VF, REVERSE VOLTAGE (V)

TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

0.52

, DIODE CAPACITANCE (pF)

0.5

d

C

0.48
012345678

V

, REVERSE VOLTAGE (V)

R

Figure 4. Capacitance

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3

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 4:1

−X−

D

2X

b1

3

1

e

TOP VIEW

1

−Y−

E

2

b

2X

X0.08 Y

3X

L

SOT−723

CASE 631AA−01

ISSUE D

A

H

E

C

SIDE VIEW

DATE 10 AUG 2009

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

DIM MIN NOM MAX

A 0.45 0.50 0.55
b 0.15 0.21 0.27

b1 0.25 0.31 0.37

C 0.07 0.12 0.17
D 1.15 1.20 1.25
E 0.75 0.80 0.85
e

H 1.15 1.20 1.25

L

L2 0.15 0.20 0.25

0.40 BSC

E

0.29 REF

3X

L2

BOTTOM VIEW

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 2:

PIN 1. ANODE

2. N/C

3. CATHODE

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 4:

PIN 1. CATHODE

RECOMMENDED

SOLDERING FOOTPRINT*

2X

0.40

2X

0.27

PACKAGE

OUTLINE

1.50

3X

0.52

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

0.36

DIMENSIONS: MILLIMETERS

2. CATHODE

3. ANODE

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

GENERIC

MARKING DIAGRAM*

XX M

1

XX = Specific Device Code
M = Date Code

*This information is generic. Please refer

to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.

DOCUMENT NUMBER:

DESCRIPTION:

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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019

98AON12989D

SOT−723

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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