This Schottky barrier diode is designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
The BAT54M3T5G device is a spin−off of our popular SOT−23
three−leaded device and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 Volts (Typ) @ I
• Reduces Board Space
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
t
< 10 msec
p
= 125°C unless otherwise noted)
J
SymbolValueUnit
P
I
FSM
I
FRM
stg
= 10 mAdc
F
R
F
F
J
200 MaxmA
−55 to +125°C
−55 to +150°C
30V
200
2.0
600mA
300mA
mW
mW/°C
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30 V
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODE
3
CATHODE
3
SOT−723
CASE 631AA
2
1
AP = Specific Device Code
M = Date Code
STYLE 2
ORDERING INFORMATION
DevicePackageShipping
BAT54M3T5GSOT−723
NSVBAT54M3T5G SOT−723
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
Reverse Breakdown Voltage (IR = 10 mA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)C
Reverse Leakage (VR = 25 V)I
Forward Voltage(IF = 0.1 mA
Reverse Recovery Time (IF = IR = 10 mA, I
= 25°C unless otherwise noted)
A
(IF = 1.0 mA
(IF = 10 mA
(IF = 30 mA
(IF = 100 mA
= 1.0 mA, Figure 1)t
R(REC)
SymbolMinTypMaxUnit
V
(BR)R
T
R
V
F
30−−V
−7.610pF
−0.52.0
−0.220.24
mA
V
−0.290.32
−0.350.40
−0.410.5
−0.520.8
rr
−−5.0ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
+10 V
820
d
0
Ω
2 k
100 μH
0.1 μF
BAT54M3T5G
I
0.1 μF
F
t
t
r
T
p
10%
I
F
t
rr
T
50 Ω OUTPUT
PULSE
GENERATOR
100
85°C
10
150°C
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.00.1
, FORWARD VOLTAGE (VOLTS)
V
F
Figure 2. Forward VoltageFigure 3. Leakage Current
DUT
50 Ω INPUT
90%
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
is equal to 10 mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
125°C
25°C
−40°C
0.20.30.4
−55°C
0.5
0.6
1000
, REVERSE CURRENT (μA)
R
I
0.001
100
10
1.0
0.1
0.01
TA = 150°C
0
510
V
, REVERSE VOLTAGE (VOLTS)
R
= 1 mA
i
I
R
R(REC)
OUTPUT PULSE
= IR = 10 mA; measure
(I
F
at i
R(REC)
= 1 mA)
TA = 125°C
TA = 85°C
TA = 25°C
15
20
25
3
14
12
10
8
6
4
, TOATAL CAP ACITANCE (pF)
T
2
C
0
0
5101530
, REVERSE VOLTAGE (VOLTS)
V
R
2520
Figure 4. Total Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 4:1
−X−
D
2X
b1
3
1
e
TOP VIEW
1
−Y−
E
2
b
2X
X0.08Y
3X
L
SOT−723
CASE 631AA−01
ISSUE D
A
H
E
C
SIDE VIEW
DATE 10 AUG 2009
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
DIM MINNOM MAX
A0.450.500.55
b0.150.210.27
b10.250.310.37
C0.070.120.17
D1.151.201.25
E0.750.800.85
e
H1.151.201.25
L
L20.150.200.25
0.40 BSC
E
0.29 REF
3X
L2
BOTTOM VIEW
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.36
DIMENSIONS: MILLIMETERS
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
GENERIC
MARKING DIAGRAM*
XX M
1
XX= Specific Device Code
M= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
DOCUMENT NUMBER:
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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