ON Semiconductor BAT54M3T5G User Manual

BAT54M3T5G

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Schottky Barrier Diode

This Schottky barrier diode is designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.

The BAT54M3T5G device is a spin−off of our popular SOT−23
three−leaded device and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.

Features

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 Volts (Typ) @ I

• Reduces Board Space

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

Rating

Reverse Voltage V
Forward Power Dissipation

= 25°C

@ T

A

Derate above 25°C

Forward Current (DC) I

Non−Repetitive Peak Forward Current

Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%

Junction Temperature T
Storage Temperature Range T

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

t

< 10 msec

p

= 125°C unless otherwise noted)

J

Symbol Value Unit

P

I

FSM

I

FRM

stg

= 10 mAdc

F

R
F

F

J

200 Max mA

−55 to +125 °C

−55 to +150 °C

30 V

200

2.0

600 mA

300 mA

mW

mW/°C

http://onsemi.com

30 V

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODE

3

CATHODE

3

SOT−723

CASE 631AA

2

1

AP = Specific Device Code
M = Date Code

STYLE 2

ORDERING INFORMATION

Device Package Shipping

BAT54M3T5G SOT−723

NSVBAT54M3T5G SOT−723

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

(Pb−Free)

(Pb−Free)

1

ANODE

MARKING
DIAGRAM

AP M

1

8000/Tape & Ree

8000/Tape & Ree

†

© Semiconductor Components Industries, LLC, 2014

July, 2014 − Rev. 2

Publication Order Number:

BAT54M3/D

BAT54M3T5G

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ELECTRICAL CHARACTERISTICS (T

Characteristic

Reverse Breakdown Voltage (IR = 10 mA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mA

Reverse Recovery Time (IF = IR = 10 mA, I

= 25°C unless otherwise noted)

A

(IF = 1.0 mA

(IF = 10 mA
(IF = 30 mA

(IF = 100 mA

= 1.0 mA, Figure 1) t

R(REC)

Symbol Min Typ Max Unit

V

(BR)R

T

R

V

F

30 − − V

− 7.6 10 pF

− 0.5 2.0

− 0.22 0.24

mA

V

− 0.29 0.32

− 0.35 0.40

− 0.41 0.5

− 0.52 0.8

rr

− − 5.0 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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