ON Semiconductor BAS40-06LT1 Datasheet

BAS40-06LT1
Preferred Device
Common Anode Schottky Barrier Diodes
Extremely Fast Switching Speed
Low Forward Voltage — 0.50 Volts (Typ) @ I
Device Marking: L2
= 10 mAdc
F
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40 VOLTS
SCHOTTKY BARRIER DIODE
3
MAXIMUM RATINGS (T
Symbol
V
Reverse Voltage 40 Volts
R
= 150°C unless otherwise noted)
J
Rating Value Unit
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
TJ, T
Forward Power Dissipation
F
stg
@ TA = 25°C Derate above 25°C
Operating Junction and Storage
T emperature Range
225
1.8mWmW/°C
–55 to
+150
°C
1
2
PLASTIC
SOT–23 (TO–236AB)
CASE 318
ANODE
3
CATHODE
1 2
CATHODE
ORDERING INFORMATION
Device Package Shipping
BAS40–06LT1 SOT–23 3000 / Tape & Reel
Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 3
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
BAS40–06L T1/D
BAS40–06LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage (IR = 10 µA) V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C Reverse Leakage (VR = 25 V) I Forward Voltage (IF = 0.1 mAdc) V Forward Voltage (IF = 30 mAdc) V Forward Voltage (IF = 100 mAdc) V
100
10
150°C
1.0
125°C
, FORWARD CURRENT (mA)
85°C
F
I
25°C
0.1 0 0.1
–40°C
0.2 0.3 0.4 VF, FORWARD VOLTAGE (VOLTS)
–55°C
= 25°C unless otherwise noted)
A
0.6 0.7
0.5
0.8
, REVERSE CURRENT (µA)
R
I
100
1.0
0.1
0.01
0.001
10
0
TA = 150°C
125°C
85°C
25°C
Figure 1. T ypical Forward Voltage Figure 2. Reverse Current versus Reverse
Symbol Min Max Unit
(BR)R
T
R
F F F
5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS)
40 Volts — 5.0 pF — 1.0 µAdc — 380 mVdc — 500 mVdc — 1.0 Vdc
V oltage
25
, CAPACITANCE (pF)
T
C
3.5
3.0
2.5
2.0
1.5
1.0
0.5 0
5.0 10 15 40
0
VR, REVERSE VOLTAGE (VOLTS)
2520
Figure 3. T ypical Capacitance
30 35
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2
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