BAS40-06LT1
Preferred Device
Common Anode Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand held and portable
applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.50 Volts (Typ) @ I
• Device Marking: L2
= 10 mAdc
F
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40 VOLTS
SCHOTTKY BARRIER DIODE
3
MAXIMUM RATINGS (T
Symbol
V
Reverse Voltage 40 Volts
R
= 150°C unless otherwise noted)
J
Rating Value Unit
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
TJ, T
Forward Power Dissipation
F
stg
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage
T emperature Range
225
1.8mWmW/°C
–55 to
+150
°C
1
2
PLASTIC
SOT–23 (TO–236AB)
CASE 318
ANODE
3
CATHODE
1
2
CATHODE
ORDERING INFORMATION
Device Package Shipping
BAS40–06LT1 SOT–23 3000 / Tape & Reel
Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 3
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
BAS40–06L T1/D
BAS40–06LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V
100
10
150°C
1.0
125°C
, FORWARD CURRENT (mA)
85°C
F
I
25°C
0.1
0 0.1
–40°C
0.2 0.3 0.4
VF, FORWARD VOLTAGE (VOLTS)
–55°C
= 25°C unless otherwise noted)
A
0.6 0.7
0.5
0.8
, REVERSE CURRENT (µA)
R
I
100
1.0
0.1
0.01
0.001
10
0
TA = 150°C
125°C
85°C
25°C
Figure 1. T ypical Forward Voltage Figure 2. Reverse Current versus Reverse
Symbol Min Max Unit
(BR)R
T
R
F
F
F
5.0 10 15 20
VR, REVERSE VOLTAGE (VOLTS)
40 — Volts
— 5.0 pF
— 1.0 µAdc
— 380 mVdc
— 500 mVdc
— 1.0 Vdc
V oltage
25
, CAPACITANCE (pF)
T
C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5.0 10 15 40
0
VR, REVERSE VOLTAGE (VOLTS)
2520
Figure 3. T ypical Capacitance
30 35
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2