Datasheet BAS40-06LT1 Datasheet (ON Semiconductor)

BAS40-06LT1

Preferred Device

Common Anode Schottky
Barrier Diodes

These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand held and portable
applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.50 Volts (Typ) @ I

• Device Marking: L2

= 10 mAdc

F

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40 VOLTS

SCHOTTKY BARRIER DIODE

3

MAXIMUM RATINGS (T

Symbol

V

Reverse Voltage 40 Volts

R

= 150°C unless otherwise noted)

J

Rating Value Unit

THERMAL CHARACTERISTICS

Symbol Characteristic Max Unit

P

TJ, T

Forward Power Dissipation

F

stg

@ TA = 25°C
Derate above 25°C

Operating Junction and Storage

T emperature Range

225

1.8mWmW/°C

–55 to

+150

°C

1

2

PLASTIC

SOT–23 (TO–236AB)

CASE 318

ANODE

3

CATHODE

1
2

CATHODE

ORDERING INFORMATION

Device Package Shipping

BAS40–06LT1 SOT–23 3000 / Tape & Reel

 Semiconductor Components Industries, LLC, 2000

April, 2000 – Rev. 3

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

BAS40–06L T1/D

BAS40–06LT1

ELECTRICAL CHARACTERISTICS (T

Characteristic

Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V

100

10

150°C

1.0

125°C

, FORWARD CURRENT (mA)

85°C

F

I

25°C

0.1
0 0.1

–40°C

0.2 0.3 0.4
VF, FORWARD VOLTAGE (VOLTS)

–55°C

= 25°C unless otherwise noted)

A

0.6 0.7

0.5

0.8

, REVERSE CURRENT (µA)

R

I

100

1.0

0.1

0.01

0.001

10

0

TA = 150°C

125°C

85°C

25°C

Figure 1. T ypical Forward Voltage Figure 2. Reverse Current versus Reverse

Symbol Min Max Unit

(BR)R

T

R

F
F
F

5.0 10 15 20
VR, REVERSE VOLTAGE (VOLTS)

40 — Volts
— 5.0 pF
— 1.0 µAdc
— 380 mVdc
— 500 mVdc
— 1.0 Vdc

V oltage

25

, CAPACITANCE (pF)

T

C

3.5

3.0

2.5

2.0

1.5

1.0

0.5
0

5.0 10 15 40

0

VR, REVERSE VOLTAGE (VOLTS)

2520

Figure 3. T ypical Capacitance

30 35

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2

BAS40–06LT1

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection

0.037

0.95

0.035

0.9

SOT–23 POWER DISSIP ATION

The power dissipation of the SOT–23 is a function of
the drain pad size. This can vary from the minimum pad
size for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device
is determined by T
temperature of the die, R

, the maximum rated junction

J(max)

, the thermal resistance from

θJA

the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:

PD =

T

J(max)

R

θJA

– T

A

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device
which in this case is 225 milliwatts.

150°C – 25°C

PD =

556°C/W

= 225 milliwatts

The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–23 package.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the
same footprint.

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.037

0.95

0.079

2.0

0.031

0.8

inches

mm

SOT–23

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure.
Therefore, the following items should always be observed
in order to minimize the thermal stress to which the
devices are subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of

the leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.

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BAS40–06LT1

P ACKAGE DIMENSIONS

SOT–23 (TO–236AB)

PLASTIC PACKAGE

CASE 318–08

ISSUE AF

A

L

3

1

2

S

B

GV

C

D

H

K

Thermal Clad is a registered trademark of the Bergquist Company .

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.

INCHES

DIMAMIN MAX MIN MAX

0.1102 0.1197 2.80 3.04

B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64

J

V 0.0177 0.0236 0.45 0.60

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

MILLIMETERS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability ,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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BAS40–06L T1/D