ON Semiconductor BAS40-04LT1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.50 Volts (Typ) @ IF = 10 mAdc

ANODE

1

CATHODE/ANODE

CATHODE

2

3



Motorola Preferred Device

40 VOLTS

SCHOTTKY BARRIER DIODES

3

1

2

CASE 318–08, STYLE 11

SOT–23 (TO–236AB)

MAXIMUM RATINGS

Reverse Voltage V
Forward Power Dissipation

@ TA = 25°C
Derate above 25°C

Operating Junction and Storage Temperature Range TJ, T

ELECTRICAL CHARACTERISTICS (T

Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a registered trademark of the Bergquist Company .

(TJ = 150°C unless otherwise noted)

Rating Symbol Value Unit

R

P

F

stg

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

(BR)R

T

R

F
F
F

40 Volts

225

1.8

–55 to +150 °C

40 — Volts
— 5.0 pF
— 1.0 µAdc
— 380 mVdc
— 500 mVdc
— 1.0 Vdc

mW

mW/°C

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1998

1

BAS40-04LT1

100

1.0

, FORWARD CURRENT (mA)

F

I

0.1

10

0 0.1

100

TA = 150°C

125°C
85°C

25°C

150°C

–40°C

0.2 0.3 0.4
VF, FORWARD VOLTAGE (VOLTS)

–55°C

0.5

0.6 0.7

0.8

A)

µ

, REVERSE CURRENT (

R

I

0.001

10

1.0

0.1

0.01

125°C

85°C

25°C

0

5.0 10 15 20
VR, REVERSE VOLTAGE (VOLTS)

Figure 1. T ypical Forward Voltage Figure 2. Reverse Current versus Reverse

V oltage

3.5

3.0

2.5

2.0

25

, CAPACITANCE (pF)

T

C

1.5

1.0

0.5
0

5.0 10 15 40

0

VR, REVERSE VOLTAGE (VOLTS)

2520

Figure 3. T ypical Capacitance

30 35

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data