ON Semiconductor BAS21XV2 User Manual
High Voltage
Switching Diode
BAS21XV2
The BAS21XV2 Switching Diode is a spin−off of our popular
SOT−23 three−leaded device. It is designed for switching applications
and is housed in the SOD−523 surface mount package. This device is
ideal for low−power surface mount applications, where board space is
at a premium.
Features
• Extremely Small SOD−523 Package
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
Repetitive Peak Reverse Voltage V
Continuous Forward Current I
Peak Forward Surge Current I
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
Non−Repetitive Peak Forward Current
(Square Wave, T
t = 1 s
t = 1 ms
t = 1 s
= 25°C prior to surge)
J
R
RRM
F
FM(surge)
I
FRM
I
FSM
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
T
= 25°C
A
Thermal Resistance Junction−to−Ambient
(Note 1)
Junction and Storage Temperature Range TJ, T
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06″ thick single
sided. Operating to steady state.
P
D
R
JA
stg
250 Vdc
250 Vdc
200 mAdc
625 mAdc
500 mA
5.0
2.0
0.5
250 mW
500 °C/W
−55 to
+150
A
°C
www.onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
1
CATHODE
2
1
SOD−523
CASE 502
XX = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device Package Shipping
BAS21XV2T5G SOD−523
NSVBAS21XV2T5G SOD−523
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2
ANODE
MARKING
DIAGRAM
XX
M
12
(Pb−Free)
(Pb−Free)
8000 / Tape &
Reel
8000 / Tape &
Reel
†
© Semiconductor Components Industries, LLC, 2019
February, 2021 − Rev. 0
1 Publication Order Number:
BAS21XV2/D
BAS21XV2
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
= 200 Vdc)
R
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 Adc)
Forward Voltage
(IF = 100 mAdc)
(I
= 200 mAdc)
F
Diode Capacitance
(V
= 0, f = 1.0 MHz)
R
Reverse Recovery Time
= IR = 30 mAdc, RL = 100 )
(I
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820
+10 V
2.0 k
100 H
I
0.1 F
F
t
r
10%
0.1 F
I
R
V
(BR)
V
F
C
D
t
rr
t
p
t
0.01
10
0.1
100
Adc
250 − Vdc
600
1000
1000
1250
mV
− 5.0
− 50
I
F
t
rr
pF
ns
t
50 OUTPUT
PULSE
GENERATOR
D.U.T.
90%
50 INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
is equal to 30 mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
I
R
) of 30 mA.
F
= 3.0 mA
i
R(REC)
OUTPUT PULSE
= IR = 30 mA; MEASURED
(I
F
at i
= 3.0 mA)
R(REC)
www.onsemi.com
2
Loading...