ON Semiconductor BAS21SLT1G Technical data
BAS21SLT1G
Dual Series High Voltage
Switching Diode
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
Repetitive Peak Reverse Voltage V
Peak Forward Current I
Peak Forward Surge Current I
R
RRM
F
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
P
R
P
R
TJ, T
D
JA
D
JA
stg
250 Vdc
250 Vdc
225 mAdc
625 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
−55 to
+150
mW/°C
mW/°C
mW
mW
°C
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ANODE
1
3
CATHODE/ANODE
1
2
SOT−23
CASE 318
STYLE 11
CATHODE
2
3
MARKING DIAGRAM
JT M G
G
1
JT = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
BAS21SLT1G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1 Publication Order Number:
BAS21SLT1/D
BAS21SLT1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
= 100 Adc)
(I
BR
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(V
= 0, f = 1.0 MHz)
R
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 )
820
+10 V
50 OUTPUT
PULSE
GENERATOR
0.1 F
2.0 k
100 H
I
F
D.U.T.
= 25°C unless otherwise noted)
A
0.1 F
50 INPUT
SAMPLING
V
R
OSCILLOSCOPE
Symbol Min Max Unit
I
R
V
(BR)
V
F
C
D
t
rr
t
t
r
p
10%
−
−
0.1
100
250 − Vdc
−
−
1000
1250
− 5.0 pF
− 50 ns
I
t
F
t
rr
90%
i
R(REC)
OUTPUT PULSE
at i
= 3.0 mA)
R(REC)
INPUT SIGNAL
I
R
(IF = IR = 30 mA; MEASURED
Adc
mV
t
= 3.0 mA
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
Figure 1. Recovery Time Equivalent Test Circuit
1200
TA = −55°C
1000
800
155°C
600
400
FORWARD VOLTAGE (mV)
200
1
1 10 100 1000
FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Reverse Leakage
25°C
is equal to 30 mA.
R(peak)
7000
6000
5000
4000
3000
6
5
4
3
REVERSE CURRENT (nA)
2
1
0
21
TA = 155°C
TA = 25°C
TA = −55°C
5 10 20 50 100 200
REVERSE VOLTAGE (V)
300
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