ON Semiconductor 2SA1774G, S2SA1774G User Manual
2SA1774G, S2SA1774G
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SC−75/SOT−416/SC−90
package which is designed for low power surface mount
applications, where board space is at a premium.
Features
• Reduces Board Space
• High h
• Low V
• Available in 8 mm, 7−inch/3000 Unit Tape and Reel
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
, 210−460 (typical)
FE
, < 0.5 V
CE(sat)
www.
CASE 463
COLLECTOR
onsemi.com
SC−75
STYLE 1
3
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
= 25°C)
A
(BR)CBO
(BR)CEO
(BR)EBO
C
−60 Vdc
−50 Vdc
−6.0 Vdc
−100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation (Note 1) P
Junction Temperature T
Storage Temperature Range T
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
D
J
stg
150 mW
150 °C
−55 ~ + 150 °C
1
BASE
2
EMITTER
MARKING DIAGRAM
F9 M G
G
1
F9 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
2SA1774G SC−75
(Pb−Free)
S2SA1774G SC−75
(Pb−Free)
2SA1774T1G SC−75
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2012
February, 2019 − Rev. 10
1 Publication Order Number:
2SA1774/D
2SA1774G, S2SA1774G
ELECTRICAL CHARACTERISTICS (T
A
Characteristic Symbol Min Ty p Max Unit
Collector−Base Breakdown Voltage
(IC = −50 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage
(IE = −50 mAdc, IE = 0)
Collector−Base Cutoff Current
(VCB = −30 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = −5.0 Vdc, IB = 0)
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
Output Capacitance
(VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
= 25°C)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat )
h
f
C
FE
T
OB
V
−60 − −
V
−50 − −
V
−6.0 − −
mA
− − −0.5
mA
− − −0.5
V
− − −0.5
−
120 − 560
MHz
− 140 −
pF
− 3.5 −
www.onsemi.com
2
Loading...