ON Semiconductor 2N7002W User Manual

Enhancement Mode Field
Effect Transistor

N−Channel

2N7002W

Features

• Low On−Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra−Small Surface Mount Package

• These Devices are Pb−Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Drain−Gate Voltage RGS ≤ 1.0 MW

Gate−Source Voltage

Gate−Source Voltage

Continuous
Continuous @ 100°C
Pulsed

Junction and Storage Temperature Range TJ, T

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

Continuous
Pulsed

THERMAL CHARACTERISTICS

Parameter Symbol Max Unit

Total Device Dissipation

Derating above T

Thermal Resistance, Junction−to−Ambient
(Note 1)

1. Device mounted on FR−4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land
pad size.

= 25°C

A

= 25°C unless otherwise noted)

A

Symbol Value Unit

60 V

60 V

±20
±40

mA

115

73

800

−55 to
+150

200

1.6mWmW/°C

625 °C/W

V

V

R

DSS

DGR

GSS

I

D

P

D

q

JA

STG

V

°C

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SC−70/SOT−323

CASE 419

SIMPLIFIED SCHEMATIC

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

3

D

&E&Y

S

G

Line 1:
&E = Space
&Y = Binary Year Code

Line 2:
&Z = Designates the Assembly Plant Code
2N = Specific Device Code
&G = 1−digit Week Code

&Z2N&G

21

Gate Source

© Semiconductor Components Industries, LLC, 2020

March, 2021 − Rev. 2

ORDERING INFORMATION

Device Package Shipping

2N7002W 3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

SC−70

(Pb−Free)

2N7002W−FCS/D

†

2N7002W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

A

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS (Note 2)

Drain−Source Breakdown Voltage

Zero Gate Voltage Drain Current I

Gate−Body Leakage Current I

BV

DSS

DSS

GSS

VGS = 0 V, ID = 10 mA

VGS = 0 V,
V

= 60 V

DS

TC = 25°C 0.001 1.0 mA

TC = 125°C 7 500

VGS = ±20 V, VDS = 0 V 0.2 ±10 nA

60 78 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Static Drain−Source On−Resistance R

V

GS(th)

DS(ON)

VGS = VDS, ID = 250 mA

VGS = 5 V, ID = 0.05 A 1.6 7.5 W

1.0 1.76 2.0 V

VGS = 10 V, ID = 0.5 A, @ TJ = 125°C 2.53 13.5

On−State Drain Current I

Forward Transconductance g

D(ON)

FS

VGS = 10 V, VDS = 7.5 V 0.5 1.43 A

VDS = 10 V, ID = 0.2 A 80 356.5 mS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

C

ISS

OSS

RSS

VGS = 0 V, VDS = 25 V, f = 1.0 MHz

37.8 50

12.4 25

6.5 7.0

pF

SWITCHING CHARACTERISTICS

Turn−On Delay Time

Turn−Off Delay Time t

t

D(ON)

D(OFF)

V

= 10 V, VDD = 30 V, ID = 0.2 A,

GEN

= 150 W, R

R

L

GEN

= 25 W

5.85 20

12.5 20

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Short duration test pulse used to minimize self−heating effect.

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