ON Semiconductor 2N7002W User Manual

Enhancement Mode Field

Effect Transistor

N−Channel

2N7002W

Features

•Low On−Resistance

•Low Gate Threshold Voltage

•Low Input Capacitance

•Fast Switching Speed

•Low Input/Output Leakage

•Ultra−Small Surface Mount Package

•These Devices are Pb−Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Parameter	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	60	V
Drain−Gate Voltage RGS ≤ 1.0 MW	VDGR	60	V
Gate−Source Voltage	VGSS	±20	V
Continuous
Pulsed		±40
Gate−Source Voltage	ID		mA
Continuous		115
Continuous @ 100°C		73
Pulsed		800
Junction and Storage Temperature Range	TJ, TSTG	−55 to	°C
		+150

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Parameter	Symbol	Max	Unit
Total Device Dissipation	PD	200	mW
Derating above TA = 25°C		1.6	mW/°C
Thermal Resistance, Junction−to−Ambient	RqJA	625	°C/W
(Note 1)

1.Device mounted on FR−4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

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SC−70/SOT−323

CASE 419

SIMPLIFIED SCHEMATIC

MARKING DIAGRAM & PIN ASSIGNMENT

Drain

3

D

&E&Y

&Z2N&G

S

G

1

2

Gate

Source

Line 1:

&E

= Space

&Y

= Binary Year Code

Line 2:

&Z = Designates the Assembly Plant Code

2N = Specific Device Code

&G = 1−digit Week Code

ORDERING INFORMATION

Device	Package	Shipping†
2N7002W	SC−70	3000 / Tape & Reel
	(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

♥ Semiconductor Components Industries, LLC, 2020	1	Publication Order Number:
March, 2021 − Rev. 2		2N7002W−FCS/D

2N7002W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Parameter	Symbol	Test Condition		Min	Typ	Max	Units
OFF CHARACTERISTICS (Note 2)
Drain−Source Breakdown Voltage	BVDSS	VGS = 0 V, ID = 10 mA		60	78		V
Zero Gate Voltage Drain Current	IDSS	VGS = 0 V,	TC = 25°C		0.001	1.0	mA
		VDS = 60 V	T = 125°C		7	500
			C
Gate−Body Leakage Current	IGSS	VGS = ±20 V, VDS = 0 V			0.2	±10	nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage	VGS(th)	VGS = VDS, ID = 250 mA		1.0	1.76	2.0	V
Static Drain−Source On−Resistance	RDS(ON)	VGS = 5 V, ID = 0.05 A			1.6	7.5	W
		VGS = 10 V, ID = 0.5 A, @ TJ = 125°C			2.53	13.5
On−State Drain Current	ID(ON)	VGS = 10 V, VDS = 7.5 V		0.5	1.43		A
Forward Transconductance	gFS	VDS = 10 V, ID = 0.2 A		80	356.5		mS
DYNAMIC CHARACTERISTICS
Input Capacitance	CISS				37.8	50	pF
Output Capacitance	COSS	VGS = 0 V, VDS = 25 V, f = 1.0 MHz			12.4	25
Reverse Transfer Capacitance	CRSS				6.5	7.0
SWITCHING CHARACTERISTICS
Turn−On Delay Time	tD(ON)	VGEN = 10 V, VDD	= 30 V, ID = 0.2 A,		5.85	20	ns
Turn−Off Delay Time	tD(OFF)	RL = 150 W, RGEN	= 25 W		12.5	20

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Short duration test pulse used to minimize self−heating effect.

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