Î
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ON Semiconductor
Complementary Silicon Plastic
PNP
2N6107
Power Transistors
. . . designed for use in general–purpose amplifier and switching
applications.
• DC Current Gain Specified to 7.0 Amperes
hFE = 30–150 @ IC
= 3.0 Adc — 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc — All Devices
• Collector–Emitter Sustaining Voltage —
V
CEO(sus)
• High Current Gain — Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc — 2N6288, 90, 92
= 10 MHz (Min) @ IC = 500 mAdc — 2N6107, 09, 11
• TO–220AB Compact Package
*MAXIMUM RATINGS
ООООООООО
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Base Current
Total Power Dissipation @ TC = 25C
Derate above 25C
ООООООООО
Operating and Storage Junction
Temperature Range
Rating
= 30 Vdc (Min) — 2N6111, 2N6288
= 50 Vdc (Min) — 2N6109
= 70 Vdc (Min) — 2N6107, 2N6292
CB
EB
I
I
2N6111
Î
2N6288
30
40
C
B
D
ОООООО
stg
Peak
ÎÎ
Symbol
V
CEO
V
V
P
ÎÎ
TJ, T
ÎÎ
2N6109
50
60
5.0
7.0
10
3.0
40
0.32
–65 to +150
2N6107
Î
2N6292
70
80
Î
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/C
Î
C
2N6109
*
2N6111
NPN
2N6288
2N6292
*ON Semiconductor Preferred Device
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
30–50–70 VOLTS
40 WATTS
STYLE 1:
PIN 1. BASE
1
2
3
CASE 221A–09
TO–220AB
*
4
2. COLLECTOR
3. EMITTER
4. COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 5
Symbol
R
θJC
Max
3.125
1 Publication Order Number:
Unit
C/W
2N6107/D
2N6107 2N6109 2N6111 2N6288 2N6292
40
30
20
10
, POWER DISSIPATION (WATTS)
D
P
0
0 20 40 60 80 100 120 160
T
, CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
140
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2
2N6107 2N6109 2N6111 2N6288 2N6292
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
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Î
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*ELECTRICAL CHARACTERISTICS (T
= 25C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0) 2N6111, 2N6288
ОООООООООООООООООООО
ОООООООООООООООООООО
2N6109
2N6107, 2N6292
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0) 2N6111, 2N6288
ОООООООООООООООООООО
(VCE = 40 Vdc, IB = 0) 2N6109
ОООООООООООООООООООО
(VCE = 60 Vdc, IB = 0) 2N6107, 2N6292
Collector Cutoff Current
ОООООООООООООООООООО
(VCE = 40 Vdc, V
(VCE = 60 Vdc, V
ОООООООООООООООООООО
(VCE = 80 Vdc, V
(VCE = 30 Vdc, V
ОООООООООООООООООООО
(VCE = 50 Vdc, V
ОООООООООООООООООООО
(VCE = 70 Vdc, V
= 1.5 Vdc) 2N6111, 2N6288
EB(off)
= 1.5 Vdc) 2N6109
EB(off)
= 1.5 Vdc) 2N6107, 2N6292
EB(off)
= 1.5 Vdc, TC = 150C) 2N6111, 2N6288
EB(off)
= 1.5 Vdc, TC = 150C) 2N6109
EB(off)
= 1.5 Vdc, TC = 150C) 2N6107, 2N6292
EB(off)
Emitter Cutoff Current
ОООООООООООООООООООО
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc) 2N6107, 2N6292
ОООООООООООООООООООО
(IC = 2.5 Adc, VCE = 4.0 Vdc) 2N6109
ОООООООООООООООООООО
(IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6111, 2N6288
(IC = 7.0 Adc, VCE = 4.0 Vdc) All Devices
ОООООООООООООООООООО
Collector–Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 3.0 Adc)
Base–Emitter On Voltage
ОООООООООООООООООООО
(IC = 7.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 4.0 Vdc, f
ОООООООООООООООООООО
= 1.0 MHz) 2N6288, 92
test
2N6107, 09, 11
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| • f
test
.
Symbol
V
CEO(sus)
ÎÎÎ
ÎÎÎ
I
CEO
ÎÎÎ
ÎÎÎ
I
CEX
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
I
EBO
ÎÎÎ
h
FE
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
CE(sat)
V
BE(on)
ÎÎÎ
f
T
ÎÎÎ
C
ob
h
fe
Min
30
Î
50
Î
70
Î
—
—
Î
—
Î
—
—
Î
—
Î
—
—
Î
—
—
Î
30
Î
30
Î
30
2.3
Î
—
—
Î
4.0
Î
10
—
20
Max
—
ÎÎ
—
ÎÎ
—
ÎÎ
1.0
1.0
ÎÎ
1.0
ÎÎ
100
100
ÎÎ
100
ÎÎ
2.0
2.0
ÎÎ
2.0
1.0
ÎÎ
150
ÎÎ
150
ÎÎ
150
—
ÎÎ
3.5
3.0
ÎÎ
—
ÎÎ
—
250
—
Unit
Vdc
Î
Î
mAdc
Î
Î
µAdc
Î
Î
Î
mAdc
Î
mAdc
Î
—
Î
Î
Î
Vdc
Vdc
Î
MHz
Î
pF
—
3
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2N6107 2N6109 2N6111 2N6288 2N6292
V
CC
+30 V
2.0
25 µs
+11 V
0
-9.0 V
tr, t
≤ 10 ns
f
DUTY CYCLE = 1.0%
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
R
B
-4 V
D
1
51
Figure 2. Switching Time Test Circuit
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
0.02 0.1 0.50.2
0.05 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
0.01
R
C
SCOPE
t, TIME (ms)
1.0
0.7
0.5
0.3
0.2
t, TIME (s)µ
0.1
0.07
0.05
0.03
0.02
0.1 0.2 0.3 0.5 2.0 3.0 7.0
0.07
Z
= r(t) R
θJC(t)
R
= 3.125°C/W MAX
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
- TC = P
J(pk)
Figure 4. Thermal Response
td @ V
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
θJC
(pk)
1
Z
(t)
θJC
P
T
= 25°C
J
VCC = 30 V
IC/IB = 10
t
r
≈ 5.0 V
BE(off)
1.0 5.0
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
15
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
, COLLECTOR CURRENT (AMPS)
C
I
0.3
0.2
0.15
1.0
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ T
= 25°C (SINGLE PULSE)
C
2.0 3.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0
5.0 10
dc
20 30 50 70 100
Figure 5. Active–Region Safe Operating Area
0.5 ms
0.1 ms
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
0.1
ms
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
5.0 ms
limits are valid for duty cycles to 10% provided T
150C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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4
There are two limitations on the power handling ability of
CE
The data of Figure 5 is based on T
= 150C; TC is
J(pk)
J(pk)
may be calculated from the data in
J(pk)
2N6107 2N6109 2N6111 2N6288 2N6292
t, TIME (s)µ
5.0
3.0
2.0
t
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1 0.2 0.3 0.5 2.0 3.0 7.0
0.07
s
t
r
1.0 5.0
IC, COLLECTOR CURRENT (AMP)
T
VCC = 30 V
IC/IB = 10
IB1 = I
Figure 6. Turn–Off Time
= 25°C
J
B2
300
200
100
70
C, CAPACITANCE (pF)
50
30
0.5
T
C
ib
C
ob
3.0 5.0 501.0 2.0
VR, REVERSE VOLTAGE (VOLTS)
10 20 30
Figure 7. Capacitance
= 25°C
J
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5
2N6107 2N6109 2N6111 2N6288 2N6292
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
SEATING
–T–
PLANE
B
4
Q
123
F
T
A
U
C
S
H
K
Z
L
V
R
J
G
D
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
MILLIMETERSINCHES
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6
Notes
2N6107 2N6109 2N6111 2N6288 2N6292
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7
2N6107 2N6109 2N6111 2N6288 2N6292
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2N6107/D
8
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