Datasheet 2N3904, 2N3904ZL1, 2N3904RLRP, 2N3904RLRM, 2N3904RLRE Datasheet (ON Semiconductor)

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N3903/D

General Purpose Transistors

NPN Silicon

COLLECTOR

2

BASE

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C

Derate above 25°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction

T emperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

(1)

ELECTRICAL CHARACTERISTICS (T

Characteristic

CEO
CBO
EBO

C

P

D

P

D

TJ, T

stg

R

q

JA

R

q

JC

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

(2)

40 Vdc
60 Vdc

6.0 Vdc
200 mAdc
625

5.0

1.5

12

–55 to +150 °C

200 °C/W

83.3 °C/W

3

1

EMITTER

mW/°C

mW/°C

mW

Watts

2N3903
2N3904

*Motorola Preferred Device

1

2

3

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Symbol Min Max Unit

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

40 — Vdc

60 — Vdc

6.0 — Vdc

— 50 nAdc

— 50 nAdc

*

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996

1

2N3903 2N3904

(

CC BE

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903

(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903

(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903

(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903

(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

(1)

2N3904

2N3904

2N3904

2N3904

2N3904

(1)

(1)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3903

2N3904

2N3904

2N3904

2N3904

2N3904

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time

Fall Time t

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

(VCC = 3.0 Vdc, VBE = 0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)

(VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903

IB1 = IB2 = 1.0 mAdc) 2N3904

h

FE

V

CE(sat)

V

BE(sat)

f

C

obo

C

ibo

h

h

h

h

NF

t

t

t

oe

Vdc

Vdc

MHz

k Ω

X 10

m

mhos

—

–4

—

dB

ns

20
40

35
70

50

100

30
60

15
30

—
—

0.65
—

T

ie

re

fe

d

r

s

f

250
300

— 4.0 pF

— 8.0 pF

1.0

1.0

0.1

0.5

50

100

1.0 40

—
—

— 35 ns
— 35 ns
—

—
— 50 ns

—
—

—
—

150
300

—
—

—
—

0.2

0.3

0.85

0.95

—
—

8.0
10

5.0

8.0

200
400

6.0

5.0

175
200

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3903 2N3904

+3

+3

DUTY CYCLE = 2%

300 ns

–0.5 V

10

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

+10.9 V

10 k

< 1 ns

Figure 1. Delay and Rise Time

Equivalent T est Circuit

C

ibo

C

obo

0.2 0.3 0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE BIAS VOLTAGE (VOLTS)

V

275

* T otal shunt capacitance of test jig and connectors

10 < t1 < 500 ms

DUTY CYCLE = 2%

0

CS < 4 pF*

–9.1 V′

t

1

+10.9 V

< 1 ns

Figure 2. Storage and Fall Time

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

5000

VCC = 40 V

3000

IC/IB = 10

2000

1000

700
500

300

Q, CHARGE (pC)

200

100

70

30 40

50

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
IC, COLLECTOR CURRENT (mA)

10 k

1N916

Equivalent T est Circuit

Q

T

V

275

Q

A

CS < 4 pF*

Figure 3. Capacitance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 4. Charge Data

3

2N3903 2N3904

500
300

200

100

70
50

30

TIME (ns)

20

10

7

1.0 2.0 3.0 10 20

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

500
300

IC/IB = 20

200

100

70
50

30
20

′

s

t , STORAGE TIME (ns)

10

7

1.0 2.0 3.0 10 20

IC/IB = 10

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

td @ VOB = 0 V

IC/IB = 10

tr @ VCC = 3.0 V

40 V

15 V

2.0 V

705100

t′s = ts – 1/8 t
IB1 = I

B2

IC/IB = 20

IC/IB = 10

705100

200

f

200

500
300

200

100

70
50

30

r

20

t , RISE TIME (ns)

10

7

1.0 2.0 3.0 10 20

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise Time

500
300

200

100

70
50

30

f

t , FALL TIME (ns)

20

10

7

1.0 2.0 3.0 10 20

IC/IB = 10

5.0 7.0

IC, COLLECTOR CURRENT (mA)

IC/IB = 20

30 50

VCC = 40 V
IC/IB = 10

705100

VCC = 40 V
IB1 = I

B2

705100

200

200

12

10

8

6

4

NF , NOISE FIGURE (dB)

2

0

SOURCE RESISTANCE = 200
IC = 1.0 mA

SOURCE RESISTANCE = 500
IC = 100 mA

0.1

0.2 0.4

Figure 7. Storage Time

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

W

SOURCE RESISTANCE = 200
IC = 0.5 mA

SOURCE RESISTANCE = 1.0 k
IC = 50 mA

W

1.0 2.0 4.0 10 20
f, FREQUENCY (kHz)

Figure 9.

NOISE FIGURE V ARIATIONS

14

12

W

40

100

10

8

6

NF , NOISE FIGURE (dB)

4

2

0

Figure 8. Fall Time

f = 1.0 kHz

0.1 1.0 2.0 4.0 10 20

0.2 0.4

IC = 1.0 mA

IC = 0.5 mA

IC = 100 mA

RS, SOURCE RESISTANCE (k OHMS)

Figure 10.

IC = 50 mA

40

100

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

h PARAMETERS

3

1

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

2N3903 2N3904

00

200

100

70

fe

h , CURRENT GAIN

50

30

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

20

10

5.0

2.0

5.0 10

00

50

m

20

10

5

oe

h , OUTPUT ADMITTANCE ( mhos)

2

1

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

Figure 12. Output Admittance

10

–4

7.0

5.0

3.0

2.0

5.0 10

1.0

ie

0.5

h , INPUT IMPEDANCE (k OHMS)

0.2

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance

5.0 10

1.0

0.7

re

h , VOLTAGE FEEDBACK RATIO (X 10 )

0.5

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

Figure 14. V oltage Feedback Ratio

5.0

10

TYPICAL STATIC CHARACTERISTICS

2.0

1.0

0.7

0.5

0.3

0.2

FE

h , DC CURRENT GAIN (NORMALIZED)

0.1

0.1

0.2 0.3

0.5 2.0 3.0 10 50

TJ = +125°C

1.00.7

+25°C

–55°C

IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE = 1.0 V

70

30205.0 7.0

100

200

Motorola Small–Signal Transistors, FETs and Diodes Device Data

5

2N3903 2N3904

1.2

1

1.0

CE

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

0.8

0.6

0.4

0.2

0

TJ = 25°C

1.0

0.8

0.6

0.4

0.2

IC = 1.0 mA

V

CE(sat)

10 mA 30 mA 100 mA

0.1

0.070.050.030.020.01
IB, BASE CURRENT (mA)

0.5 2.0 3.0 100.2 0.3

1.00.7 5.0 7.0

Figure 16. Collector Saturation Region

.0

V

@ IC/IB =10

BE(sat)

VBE @ VCE =1.0 V

@ IC/IB =10

0.5

°

0

–0.5

–1.0

COEFFICIENT (mV/ C)

–1.5

qVC FOR V

qVB FOR V

CE(sat)

BE(sat)

TJ = 25°C

+25°C TO +125°C

–55°C TO +25°C

–55°C TO +25°C

+25°C TO +125°C

1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages

500100

200

–2.0

0 60 80 120 140 160

20 40

IC, COLLECTOR CURRENT (mA)

100

180

200

Figure 18. T emperature Coefficients

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

SEATING
PLANE

2N3903 2N3904

P ACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

A

B

R

P

L

F

K

D

XX

G

J

H

V

1

C

N

SECTION X–X

N

CASE 029–04

(TO–226AA)

ISSUE AD

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

MILLIMETERSINCHES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

7

2N3903 2N3904

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8

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3903/D