ON Semiconductor 2N3904, 2N3904ZL1, 2N3904RLRP, 2N3904RLRM, 2N3904RLRE Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N3903/D

General Purpose Transistors

NPN Silicon

COLLECTOR

2

BASE

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C

Derate above 25°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction

T emperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

(1)

ELECTRICAL CHARACTERISTICS (T

Characteristic

CEO
CBO
EBO

C

P

D

P

D

TJ, T

stg

R

q

JA

R

q

JC

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

(2)

40 Vdc
60 Vdc

6.0 Vdc
200 mAdc
625

5.0

1.5

12

–55 to +150 °C

200 °C/W

83.3 °C/W

3

1

EMITTER

mW/°C

mW/°C

mW

Watts

2N3903
2N3904

*Motorola Preferred Device

1

2

3

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Symbol Min Max Unit

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

40 — Vdc

60 — Vdc

6.0 — Vdc

— 50 nAdc

— 50 nAdc

*

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996

1

2N3903 2N3904

(

CC BE

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903

(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903

(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903

(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903

(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

(1)

2N3904

2N3904

2N3904

2N3904

2N3904

(1)

(1)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3903

2N3904

2N3904

2N3904

2N3904

2N3904

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time

Fall Time t

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

(VCC = 3.0 Vdc, VBE = 0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)

(VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903

IB1 = IB2 = 1.0 mAdc) 2N3904

h

FE

V

CE(sat)

V

BE(sat)

f

C

obo

C

ibo

h

h

h

h

NF

t

t

t

oe

Vdc

Vdc

MHz

k Ω

X 10

m

mhos

—

–4

—

dB

ns

20
40

35
70

50

100

30
60

15
30

—
—

0.65
—

T

ie

re

fe

d

r

s

f

250
300

— 4.0 pF

— 8.0 pF

1.0

1.0

0.1

0.5

50

100

1.0 40

—
—

— 35 ns
— 35 ns
—

—
— 50 ns

—
—

—
—

150
300

—
—

—
—

0.2

0.3

0.85

0.95

—
—

8.0
10

5.0

8.0

200
400

6.0

5.0

175
200

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3903 2N3904

+3

+3

DUTY CYCLE = 2%

300 ns

–0.5 V

10

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

+10.9 V

10 k

< 1 ns

Figure 1. Delay and Rise Time

Equivalent T est Circuit

C

ibo

C

obo

0.2 0.3 0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE BIAS VOLTAGE (VOLTS)

V

275

* T otal shunt capacitance of test jig and connectors

10 < t1 < 500 ms

DUTY CYCLE = 2%

0

CS < 4 pF*

–9.1 V′

t

1

+10.9 V

< 1 ns

Figure 2. Storage and Fall Time

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

5000

VCC = 40 V

3000

IC/IB = 10

2000

1000

700
500

300

Q, CHARGE (pC)

200

100

70

30 40

50

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
IC, COLLECTOR CURRENT (mA)

10 k

1N916

Equivalent T est Circuit

Q

T

V

275

Q

A

CS < 4 pF*

Figure 3. Capacitance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 4. Charge Data

3