ON Semiconductor 2N3442-D Service Manual
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
1 Publication Order Number:
2N3442/D
2N3442
High−Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
Features
• Collector −Emitter Sustaining Voltage − V
CEO(sus)
= 140 Vdc (Min)
• Excellent Second Breakdown Capability
• Pb−Free Package is Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
140 Vdc
Collector−Base Voltage V
CB
160 Vdc
Emitter−Base Voltage V
EB
7.0 Vdc
Collector Current − Continuous
− Peak
I
C
10
15
Adc
Base Current − Continuous
− Peak
I
B
7.0
−
Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C (Note 2)
P
D
117
0.67
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +200
_C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.17
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Indicates JEDEC Registered Data.
2. This data guaranteed in addition to JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS − 117 WATTS
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
2N3442 TO−204 100 Units / Tray
2N3442G TO−204
(Pb−Free)
100 Units / Tray
2N3442G
AYWW
MEX
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N3442 = Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
2N3442
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
ООООООООООООООООООО
Î
Collector−Emitter Sustaining Voltage
(I
C
= 200 mAdc, I
B
= 0)
ÎÎÎ
Î
V
CEO(sus)
ÎÎ
Î
140
Î
Î
−
ÎÎ
Î
Vdc
ООООООООООООООООООО
Î
Collector Cutoff Current
(V
CE
= 140 Vdc, I
B
= 0)
ÎÎÎ
Î
I
CEO
ÎÎ
Î
−
Î
Î
200
ÎÎ
Î
mAdc
ООООООООООООООООООО
Î
Collector Cutoff Current
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150_C)
ÎÎÎ
Î
I
CEX
ÎÎ
Î
−
−
Î
Î
5.0
30
ÎÎ
Î
mAdc
ООООООООООООООООООО
Î
Emitter Cutoff Current
(V
BE
= 7.0 Vdc, I
C
= 0)
ÎÎÎ
Î
I
EBO
ÎÎ
Î
−
Î
Î
5.0
ÎÎ
Î
mAdc
ON CHARACTERISTICS (Note 3)
ООООООООООООООООООО
Î
ООООООООООООООООООО
Î
DC Current Gain
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
ÎÎÎ
Î
ÎÎÎ
Î
h
FE
ÎÎ
Î
ÎÎ
Î
20
7.5
Î
Î
Î
Î
70
−
ÎÎ
Î
ÎÎ
Î
−
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 2.0 Adc)
V
CE(sat)
−
5.0
Vdc
ООООООООООООООООООО
Î
Base−Emitter On Voltage
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
ÎÎÎ
Î
V
BE(on)
ÎÎ
Î
−
Î
Î
5.7
ÎÎ
Î
Vdc
DYNAMIC CHARACTERISTICS
ООООООООООООООООООО
Î
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 2.0 Adc, V
CE
= 4.0 Vdc, f
test
= 40 kHz)
ÎÎÎ
Î
f
T
ÎÎ
Î
80
Î
Î
−
ÎÎ
Î
kHz
ООООООООООООООООООО
Î
Small−Signal Current Gain
(I
C
= 2.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 kHz)
ÎÎÎ
Î
h
fe
ÎÎ
Î
12
Î
Î
72
ÎÎ
Î
−
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
4. f
T
= |h
fe
| • f
test
1.0
0
0 25 50 75 100 125 150 175 200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
/P
D(MAX)
, POWER DISSIPATION (NORMALIZED)
0.8
0.6
0.4
0.2
P
D
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