2N3442
High−Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
Features
• Collector −Emitter Sustaining Voltage − V
• Excellent Second Breakdown Capability
• Pb−Free Package is Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous
− Peak
Base Current − Continuous
− Peak
Total Device Dissipation @ TC = 25_C
Derate above 25_C (Note 2)
Operating and Storage Junction
Temperature Range
CEO
P
TJ, T
CB
EB
I
C
I
CEO(sus)
B
D
stg
= 140 Vdc (Min)
140 Vdc
160 Vdc
7.0 Vdc
10
15
7.0
−
117
0.67
−65 to +200
W/_C
Adc
Adc
W
_C
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10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS − 117 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Indicates JEDEC Registered Data.
2. This data guaranteed in addition to JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
R
q
JC
1.17
_C/W
2N3442G
AYWW
MEX
2N3442 = Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device Package Shipping
2N3442 TO−204 100 Units / Tray
2N3442G TO−204
(Pb−Free)
100 Units / Tray
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
1 Publication Order Number:
2N3442/D
2N3442
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ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
ООООООООООООООООООО
(I
= 200 mAdc, IB = 0)
C
Collector Cutoff Current
ООООООООООООООООООО
(VCE = 140 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 140 Vdc, V
ООООООООООООООООООО
(VCE = 140 Vdc, V
Emitter Cutoff Current
ООООООООООООООООООО
(VBE = 7.0 Vdc, IC = 0)
= 1.5 Vdc)
BE(off)
= 1.5 Vdc, TC = 150_C)
BE(off)
ON CHARACTERISTICS (Note 3)
DC Current Gain
ООООООООООООООООООО
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
ООООООООООООООООООО
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
Base−Emitter On Voltage
ООООООООООООООООООО
(IC = 10 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Symbol
V
CEO(sus)
ÎÎÎ
I
CEO
ÎÎÎ
I
CEX
ÎÎÎ
I
EBO
ÎÎÎ
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
V
BE(on)
ÎÎÎ
Min
140
ÎÎ
−
ÎÎ
−
ÎÎ
−
−
ÎÎ
ÎÎ
20
7.5
ÎÎ
−
−
ÎÎ
Max
−
Î
200
Î
5.0
Î
30
5.0
Î
Î
70
−
Î
5.0
5.7
Î
Unit
Vdc
ÎÎ
mAdc
ÎÎ
mAdc
ÎÎ
mAdc
ÎÎ
−
ÎÎ
ÎÎ
Vdc
Vdc
ÎÎ
Current−Gain − Bandwidth Product (Note 4)
ООООООООООООООООООО
(IC = 2.0 Adc, VCE = 4.0 Vdc, f
= 40 kHz)
test
Small−Signal Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ООООООООООООООООООО
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • f
test
1.0
0.8
0.6
0.4
, POWER DISSIPATION (NORMALIZED)
0.2
D(MAX)
/P
0
D
P
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
f
T
ÎÎÎ
h
fe
ÎÎÎ
80
ÎÎ
12
ÎÎ
−
Î
72
Î
kHz
ÎÎ
−
ÎÎ
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2
20
)
10
7.0
5.0
3.0
2.0
1.0
0.7
, COLLECTOR CURRENT (AMP)
0.5
C
I
0.3
0.2
ACTIVE REGION SAFE OPERATING AREA INFORMATION
dc
30 ms
50 ms
TJ = 200°C
CURRENT LIMIT
THERMAL LIMIT @ TC = 25°C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
2.0
5.0 20 100 200
3.0 7.0 10 30 50 70
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. 2N3442
100 ms
1.0 ms
100 ms
10 ms
2N3442
ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves i ndi cat e
IC − VCE limits of the transistor that must be observed
for reliable operation, i.e., the transistor must not be
subjected to greater dissipation t han t he c urves i ndicate.
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.
There are two limitations on the power−handling
The data of Figure 2 is based on T
= 200_C; T
J(pk)
C
400
200
100
, DC CURRENT GAIN
FE
h
6.0
4.0
, COLLECTOR−EMITTER VOLTAGE (VOLTS
V
CE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IC = 1.0 A
TJ = 25°C
0
2.0
5.0 10 20 50 100 200 500 1.0k 2.0k
2.0 A
IB, BASE CURRENT (mA)
4.0 A 8.0 A
Figure 4. Collector−Saturation Region
TJ = 150°C
60
40
20
10
0.1
25°C
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10
−55 °C
IC, COLLECTOR CURRENT (AMP)
VCE = 4.0 V
7.0
Figure 3. DC Current Gain
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3
2N3442
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
E
2 PLD
0.13 (0.005) Y
U
V
H
L
2
1
G
−T−
K
M
−Y−
B
T
SEATING
PLANE
M
Q
M
−Q−
0.13 (0.005) T
M
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIMETERSINCHES
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2N3442/D
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