1PMT5920B Series
l
l
l
s
l
3.2 Watt Plastic
Surface Mount
POWERMITE® Package
This complete new line of 3.2 Watt Zener Diodes are offered in
highly effici ent m icro m i niature, space saving surface mount with i ts
unique heat sink design. The POWERMITE package has the same
thermal performance as the SMA while being 50% smaller in
footprint area and delivering one of the lowest height profiles
(1.1 mm) in the industry. Because of its small size, it is ideal for use
in cellular phones, portable devices, business machines and many
other industrial/consumer applications.
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PLASTIC SURFACE MOUNT
3.2 WATT ZENER DIODES
6.2 − 47 VOLTS
Features
• Zener Breakdown Voltage: 6.2 − 47 V
• DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C
• Low Leakage < 5 mA
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Low Profile − Maximum Height of 1.1 mm
• Integral Heat Sink/Locking Tabs
• Full Metallic Bottom Eliminates Flux Entrapment
• Small Footprint − Footprint Area of 8.45 mm
2
• Supplied in 12 mm Tape and Reel
T1 = 3,000 Units per Reel
T3 = 12,000 Units per Reel
• Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes
• POWERMITE is JEDEC Registered as DO−216AA
• Cathode Indicated by Polarity Band
• Pb−Free Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MOUNTING POSITION: Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
12
1: CATHODE
2: ANODE
1
2
MARKING DIAGRAM
1
CATHODE
M = Date Code
xxB = Specific Device Code
(See Table on Page 2)
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
1PMT59xxBT1 POWERMITE 3,000/Tape&Ree
1PMT59xxBT1G POWERMITE
(Pb−Free)
1PMT59xxBT3 POWERMITE 12,000/Tape&Ree
1PMT59xxBT3G POWERMITE
(Pb−Free)
Individual devices are listed on page 2 of this data sheet.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
M
xxBG
G
POWERMITE
CASE 457
PLASTIC
2
ANODE
†
3,000/Tape&Ree
12,000/Tape&Ree
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 3
1 Publication Order Number:
1PMT5920B/D
1PMT5920B Series
MAXIMUM RATINGS
Rating Symbol Value Unit
DC Power Dissipation @ TA = 25°C (Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Lead (Anode)
Maximum DC Power Dissipation (Note 2)
Thermal Resistance from Junction−to−Tab (Cathode)
Operating and Storage Temperature Range TJ, T
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with recommended minimum pad size, PC board FR−4.
2. At Tab (Cathode) temperature, T
= 75°C
tab
R
R
q
R
q
Jcathode
°P
D
q
JA
Janode
°P
D
stg
°
500
4.0
248
°mW
mW/°C
°C/W
35 °C/W
°
3.2
23
W
°C/W
−55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types)
Symbol Parameter
V
I
ZT
Z
I
ZK
Z
I
V
I
V
Reverse Zener Voltage @ I
Z
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Reverse Voltage
R
Forward Current
F
Forward Voltage @ I
F
F
ELECTRICAL CHARACTERISTICS (T
Device
Device*
Marking
= 25°C unless
L
ZT
VRV
ZT
ZK
R
Z
Zener Voltage Regulator
= 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
L
Zener Voltage (Note 3)
ZT
(Volts)
I
IR @ V
ZT
R
(mA)
VZ @ I
Min Nom Max (mA)
V
(V)
I
I
F
ZK
V
I
ZK
(mA)
I
V
R
F
I
ZT
ZZT @ I
(Note 4)
R
ZT
ZZK @ I
(Note 4)
(W) (W)
1PMT5920BT1, T3,G 20B 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0
1PMT5921BT1, T3,G 21B 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0
1PMT5922BT1, T3,G 22B 7.12 7.5 7.88 50 5.0 6.0 3.0 400 0.5
1PMT5923BT1, T3,G 23B 7.79 8.2 8.61 45.7 5.0 6.5 3.5 400 0.5
1PMT5924BT1, T3,G 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5
1PMT5925BT1, T3,G 25B 9.5 10 10.5 37.5 5.0 8.0 4.5 500 0.25
1PMT5927BT1, T3,G 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25
1PMT5929BT1, T3,G 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25
1PMT5930BT1, T3,G 30B 15.2 16 16.8 23.4 1.0 12.2 10 600 0.25
1PMT5931BT1, T3,G 31B 17.1 18 18.9 20.8 1.0 13.7 12 650 0.25
1PMT5933BT1, T3,G 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25
1PMT5934BT1, T3,G 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25
1PMT5935BT1, T3,G 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25
1PMT5936BT1, T3,G 36B 28.5 30 31.5 12.5 1.0 22.8 28 750 0.25
1PMT5939BT1, T3,G 39B 37.05 39 40.95 9.6 1.0 29.7 45 900 0.25
1PMT5941BT1, T3,G 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C.
4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The
specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
*The “G” suffix indicates Pb−Free package available.
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2
1PMT5920B Series
3.5
P , MAXIMUM POWER DISSIPATION (W)
2
1
100
I , ZENER CURRENT (mA)
0
, TEMPERATURE COEFFICIENT (mV/
C)
TYPICAL CHARACTERISTICS
3
2.5
2
T
L
1.5
1
0.5
D
0
25 50 75 100 125 175
150
T, TEMPERATURE (°C)
Figure 1. Steady State Power Derating Figure 2. VZ to 10 Volts
100
50
30
20
10
5
3
2
1
0.5
Z
0.3
0.2
0.1
0 102030405060708090100
VZ, ZENER VOLTAGE (VOLTS)
Figure 3. VZ = 12 thru 47 Volts
10
1
, ZENER CURRENT (mA)
Z
I
0.1
56 910
78 1
VZ, ZENER VOLTAGE (VOLTS)
10
8
VZ @ I
ZT
6
4
2
0
−2
, TEMPERATURE COEFFICIENT (mV/°C)
−4
VZ
2 4 6 8 10 1
q
VZ, ZENER VOLTAGE (VOLTS)
Figure 4. Zener Voltage − To 12 Volts
°
200
100
70
50
30
20
10
VZ
10 20 30 50 70 100 200
q
200
I
= 1mA
VZ @ I
ZT
100
Z(dc)
70
50
30
20
10
7
10 mA
5
Z
3
Z , DYNAMIC IMPEDANCE (OHMS)
2
20 mA
i
Z(rms)
= 0.1 I
5 7 10 20 30 50 70 10
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
Figure 5. Zener Voltage − 14 To 47 Volts Figure 6. Effect of Zener Voltage
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3
Z(dc)
1PMT5920B Series
1 k
500
200
100
50
20
10
5
2
Z
Z , DYNAMIC IMPEDANCE (OHMS)
1
0.5 1 2 5 10 20 50 100 200 500
IZ, ZENER TEST CURRENT (mA)
Figure 7. Effect of Zener Current
10,000
TJ = 25°C
i
Z(rms)
22 V
= 0.1 I
12 V
Z(dc)
6.8 V
1000
MEASURED @ 0 V BIAS
MEASURED @ 50% V
100
C, CAPACITANCE (pF)
10
110
VZ, REVERSE ZENER VOLTAGE (VOLTS)
R
Figure 8. Capacitance versus Reverse
Zener Voltage
100
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4
1PMT5920B Series
OUTLINE DIMENSIONS
POWERMITE)
CASE 457−04
ISSUE D
−A−
C
J
F
0.08 (0.003) C
M
S
B
T
S
−B−
TERM. 1
K
TERM. 2
R
L
J
H
−T−
0.08 (0.003) C
D
M
S
B
T
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
S
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
DIM MIN MAX MIN MAX
A 1.75 2.05 0.069 0.081
B 1.75 2.18 0.069 0.086
C 0.85 1.15 0.033 0.045
D 0.40 0.69 0.016 0.027
F 0.70 1.00 0.028 0.039
H −0.05 +0.10 −0.002 +0.004
J 0.10 0.25 0.004 0.010
K 3.60 3.90 0.142 0.154
L 0.50 0.80 0.020 0.031
R 1.20 1.50 0.047 0.059
S
0.50 REF 0.019 REF
INCHESMILLIMETERS
SOLDERING FOOTPRINT*
0.635
2.67
0.105
0.025
0.762
0.030
2.54
0.100
SCALE 10:1
1.27
0.050
mm
ǒ
inches
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
1PMT5920B Series
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your
local Sales Representative.
1PMT5920B/D
6
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