ON Semiconductor 1PMT5920B Technical data

1PMT5920B Series
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3.2 Watt Plastic Surface Mount POWERMITE® Package
This complete new line of 3.2 Watt Zener Diodes are offered in highly effici ent m icro m i niature, space saving surface mount with i ts unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 50% smaller in footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/consumer applications.
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PLASTIC SURFACE MOUNT
3.2 WATT ZENER DIODES
6.2 − 47 VOLTS
Features
Zener Breakdown Voltage: 6.2 − 47 V
DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C
Low Leakage < 5 mA
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile − Maximum Height of 1.1 mm
Integral Heat Sink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint − Footprint Area of 8.45 mm
2
Supplied in 12 mm Tape and Reel
T1 = 3,000 Units per Reel T3 = 12,000 Units per Reel
Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes
POWERMITE is JEDEC Registered as DO−216AA
Cathode Indicated by Polarity Band
Pb−Free Packages are Available
Mechanical Characteristics CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
12
1: CATHODE 2: ANODE
1
2
MARKING DIAGRAM
1
CATHODE
M = Date Code xxB = Specific Device Code
(See Table on Page 2)
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
1PMT59xxBT1 POWERMITE 3,000/Tape&Ree 1PMT59xxBT1G POWERMITE
(Pb−Free) 1PMT59xxBT3 POWERMITE 12,000/Tape&Ree 1PMT59xxBT3G POWERMITE
(Pb−Free)
Individual devices are listed on page 2 of this data sheet.
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
M
xxBG
G
POWERMITE
CASE 457
PLASTIC
2
ANODE
3,000/Tape&Ree
12,000/Tape&Ree
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 3
1 Publication Order Number:
1PMT5920B/D
1PMT5920B Series
MAXIMUM RATINGS
Rating Symbol Value Unit
DC Power Dissipation @ TA = 25°C (Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead (Anode)
Maximum DC Power Dissipation (Note 2)
Thermal Resistance from Junction−to−Tab (Cathode)
Operating and Storage Temperature Range TJ, T
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Mounted with recommended minimum pad size, PC board FR−4.
2. At Tab (Cathode) temperature, T
= 75°C
tab
R
R
q
R
q
Jcathode
°P
D
q
JA
Janode
°P
D
stg
°
500
4.0
248
°mW
mW/°C
°C/W
35 °C/W
°
3.2 23
W
°C/W
−55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types)
Symbol Parameter
V I
ZT
Z
I
ZK
Z
I
V
I
V
Reverse Zener Voltage @ I
Z
Reverse Current Maximum Zener Impedance @ I
ZT
Reverse Current Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Reverse Voltage
R
Forward Current
F
Forward Voltage @ I
F
F
ELECTRICAL CHARACTERISTICS (T
Device
Device*
Marking
= 25°C unless
L
ZT
VRV
ZT
ZK
R
Z
Zener Voltage Regulator
= 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
L
Zener Voltage (Note 3)
ZT
(Volts)
I
IR @ V
ZT
R
(mA)
VZ @ I
Min Nom Max (mA)
V (V)
I
I
F
ZK
V
I
ZK
(mA)
I
V
R
F
I
ZT
ZZT @ I
(Note 4)
R
ZT
ZZK @ I
(Note 4)
(W) (W)
1PMT5920BT1, T3,G 20B 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0 1PMT5921BT1, T3,G 21B 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0 1PMT5922BT1, T3,G 22B 7.12 7.5 7.88 50 5.0 6.0 3.0 400 0.5 1PMT5923BT1, T3,G 23B 7.79 8.2 8.61 45.7 5.0 6.5 3.5 400 0.5 1PMT5924BT1, T3,G 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5 1PMT5925BT1, T3,G 25B 9.5 10 10.5 37.5 5.0 8.0 4.5 500 0.25 1PMT5927BT1, T3,G 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25 1PMT5929BT1, T3,G 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25 1PMT5930BT1, T3,G 30B 15.2 16 16.8 23.4 1.0 12.2 10 600 0.25 1PMT5931BT1, T3,G 31B 17.1 18 18.9 20.8 1.0 13.7 12 650 0.25 1PMT5933BT1, T3,G 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25 1PMT5934BT1, T3,G 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25 1PMT5935BT1, T3,G 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25 1PMT5936BT1, T3,G 36B 28.5 30 31.5 12.5 1.0 22.8 28 750 0.25 1PMT5939BT1, T3,G 39B 37.05 39 40.95 9.6 1.0 29.7 45 900 0.25 1PMT5941BT1, T3,G 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C.
4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
*The “G” suffix indicates Pb−Free package available.
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