ON Semiconductor 1N6373, 1N6381 Technical data
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1N6373 − 1N6381 Series
(ICTE−5 − ICTE−36,
MPTE−5 − MPTE−45)
1500 Watt Peak Power
Mosorbt Zener Transient
Voltage Suppressors
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Unidirectional*
Cathode Anode
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
AXIAL LEAD
CASE 41A
PLASTIC
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features
• Working Peak Reverse Voltage Range − 5.0 V to 45 V
• Peak Power − 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
MARKING DIAGRAMS
A
MPTE
−xx
1N
63xx
YYWWG
G
A
ICTE
−xx
YYWWG
G
• Low Leakage < 5 mA Above 10 V
• Response Time is Typically < 1 ns
• Pb−Free Packages are Available*
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MPTE−xx, G Axial Lead
MPTE−xxRL4, G Axial Lead
ICTE−xx, G Axial Lead
ICTE−xxRL4, G Axial Lead
1N63xx, G Axial Lead
1N63xxRL4, G Axial Lead
A = Assembly Location
MPTE−xx = ON Device Code
1N63xx = JEDEC Device Code
ICTE−xx = ON Device Code
YY = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location
ORDERING INFORMATION
Device Package Shipping
500 Units/Box
(Pb−Free)
1500/Tape & Ree
(Pb−Free)
500 Units/Box
(Pb−Free)
1500/Tape & Ree
(Pb−Free)
500 Units/Box
(Pb−Free)
1500/Tape & Ree
(Pb−Free)
†
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 4
1 Publication Order Number:
1N6373/D
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1)
≤ 25°C
@ T
L
Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″
Derated above T
= 75°C
L
Thermal Resistance, Junction−to−Lead
Forward Surge Current (Note 2)
= 25°C
@ T
A
Operating and Storage Temperature Range TJ, T
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above T
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
= 25°C per Figure 2.
A
*Please see 1N6382 – 1N6389 (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) for Bidirectional Devices.
P
P
R
I
FSM
PK
q
1500 W
D
5.0
20
JL
20 °C/W
W
mW/°C
200 A
stg
− 65 to +175 °C
ELECTRICAL CHARACTERISTICS (T
otherwise noted, V
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
= 3.5 V Max. @ IF (Note 3) = 100 A)
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Variation of V
Forward Current
Forward Voltage @ I
F
= 25°C unless
A
RWM
BR
VCV
I
F
V
RWM
BR
Uni−Directional TVS
I
I
V
R
F
I
T
I
PP
V
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2
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
)
ELECTRICAL CHARACTERISTICS (T
V
JEDEC
†
Device
(ON Device)
1N6373, G
(MPTE−5, G)
1N6374, G
(MPTE−8, G)
1N6375, G
(MPTE−10,G)
1N6376, G
(MPTE−12, G)
1N6377, G
(MPTE−15, G)
1N6379, G
(MPTE−22, G)
1N6380, G
(MPTE−36, G)
1N6381, G
(MPTE−45, G)
Device
Marking
1N6373
MPTE−5
1N6374
MPTE−8
1N6375
MPTE−10
1N6376
MPTE−12
1N6377
MPTE−15
1N6379
MPTE−22
1N6380
MPTE−36
1N6381
MPTE−45
RWM
(Note 4
(Volts)
5.0 300 6.0 − − 1.0 9.4 160 7.1 7.5 4.0
8.0 25 9.4 − − 1.0 15 100 11.3 11.5 8.0
10 2.0 11.7 − − 1.0 16.7 90 13.7 14.1 12
12 2.0 14.1 − − 1.0 21.2 70 16.1 16.5 14
15 2.0 17.6 − − 1.0 25 60 20.1 20.6 18
22 2.0 25.9 − − 1.0 37.5 40 29.8 32 26
36 2.0 42.4 − − 1.0 65.2 23 50.6 54.3 50
45 2.0 52.9 − − 1.0 78.9 19 63.3 70 60
= 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)
A
IR @
V
RWM
(mA)
Breakdown Voltage VC @ IPP (Note 6) VC (Volts) (Note 6)
VBR (Note 5) (Volts) @ I
Min Nom Max (mA) (Volts) (A) (mV/°C)
V
T
C
I
PP
@ IPP =
1 A
@ IPP =
10 A
ICTE−5, G ICTE−5 5.0 300 6.0 − − 1.0 9.4 160 7.1 7.5 4.0
ICTE−10, G ICTE−10 10 2.0 11.7 − − 1.0 16.7 90 13.7 14.1 8.0
ICTE−12, G ICTE−12 12 2.0 14.1 − − 1.0 21.2 70 16.1 16.5 12
ICTE−15, G ICTE−15 15 2.0 17.6 − − 1.0 25 60 20.1 20.6 14
ICTE−18, G ICTE−18 18 2.0 21.2 − − 1.0 30 50 24.2 25.2 18
ICTE−22, G ICTE−22 22 2.0 25.9 − − 1.0 37.5 40 29.8 32 21
ICTE−36, G ICTE−36 36 2.0 42.4 − − 1.0 65.2 23 50.6 54.3 26
3. Square waveform, PW = 8.3 ms, non−repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
greater than the dc or continuous peak operating voltage level.
measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.
5. V
BR
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
), which should be equal to or
RWM
†The “G’’ suffix indicates Pb−Free package available.
QV
BR
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