Datasheet 1N6373, 1N6381 Datasheet (ON Semiconductor)

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1N6373 − 1N6381 Series
(ICTE−5 − ICTE−36,
MPTE−5 − MPTE−45)

1500 Watt Peak Power
Mosorbt Zener Transient
Voltage Suppressors

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Unidirectional*

Cathode Anode

Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable

AXIAL LEAD

CASE 41A

PLASTIC

Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.

Specification Features

• Working Peak Reverse Voltage Range − 5.0 V to 45 V

• Peak Power − 1500 Watts @ 1 ms

• ESD Rating of Class 3 (>16 KV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

MARKING DIAGRAMS

A

MPTE

−xx
1N

63xx

YYWWG

G

A

ICTE

−xx

YYWWG

G

• Low Leakage < 5 mA Above 10 V

• Response Time is Typically < 1 ns

• Pb−Free Packages are Available*

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16″ from the case for 10 seconds

POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MPTE−xx, G Axial Lead

MPTE−xxRL4, G Axial Lead

ICTE−xx, G Axial Lead

ICTE−xxRL4, G Axial Lead

1N63xx, G Axial Lead

1N63xxRL4, G Axial Lead

A = Assembly Location
MPTE−xx = ON Device Code
1N63xx = JEDEC Device Code
ICTE−xx = ON Device Code
YY = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location

ORDERING INFORMATION

Device Package Shipping

500 Units/Box

(Pb−Free)

1500/Tape & Ree

(Pb−Free)

500 Units/Box

(Pb−Free)

1500/Tape & Ree

(Pb−Free)

500 Units/Box

(Pb−Free)

1500/Tape & Ree

(Pb−Free)

†

© Semiconductor Components Industries, LLC, 2005

December, 2005 − Rev. 4

1 Publication Order Number:

1N6373/D

1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation (Note 1)

≤ 25°C

@ T

L

Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″

Derated above T

= 75°C

L

Thermal Resistance, Junction−to−Lead
Forward Surge Current (Note 2)

= 25°C

@ T

A

Operating and Storage Temperature Range TJ, T

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

1. Nonrepetitive current pulse per Figure 5 and derated above T

2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

= 25°C per Figure 2.

A

*Please see 1N6382 – 1N6389 (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) for Bidirectional Devices.

P

P

R
I

FSM

PK

q

1500 W

D

5.0
20

JL

20 °C/W

W

mW/°C

200 A

stg

− 65 to +175 °C

ELECTRICAL CHARACTERISTICS (T

otherwise noted, V

Symbol

I

PP

V

C

V

RWM

I

R

V

BR

I

T

QV

BR

I

F

V

F

= 3.5 V Max. @ IF (Note 3) = 100 A)

F

Parameter

Maximum Reverse Peak Pulse Current
Clamping Voltage @ I

PP

Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I

T

Test Current
Maximum Temperature Variation of V
Forward Current
Forward Voltage @ I

F

= 25°C unless

A

RWM

BR

VCV

I

F

V

RWM

BR

Uni−Directional TVS

I

I

V

R

F

I

T

I

PP

V

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2

1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)

)

ELECTRICAL CHARACTERISTICS (T

V

JEDEC

†

Device

(ON Device)

1N6373, G

(MPTE−5, G)

1N6374, G

(MPTE−8, G)

1N6375, G

(MPTE−10,G)

1N6376, G

(MPTE−12, G)

1N6377, G

(MPTE−15, G)

1N6379, G

(MPTE−22, G)

1N6380, G

(MPTE−36, G)

1N6381, G

(MPTE−45, G)

Device

Marking

1N6373

MPTE−5

1N6374

MPTE−8

1N6375

MPTE−10

1N6376

MPTE−12

1N6377

MPTE−15

1N6379

MPTE−22

1N6380

MPTE−36

1N6381

MPTE−45

RWM

(Note 4

(Volts)

5.0 300 6.0 − − 1.0 9.4 160 7.1 7.5 4.0

8.0 25 9.4 − − 1.0 15 100 11.3 11.5 8.0

10 2.0 11.7 − − 1.0 16.7 90 13.7 14.1 12

12 2.0 14.1 − − 1.0 21.2 70 16.1 16.5 14

15 2.0 17.6 − − 1.0 25 60 20.1 20.6 18

22 2.0 25.9 − − 1.0 37.5 40 29.8 32 26

36 2.0 42.4 − − 1.0 65.2 23 50.6 54.3 50

45 2.0 52.9 − − 1.0 78.9 19 63.3 70 60

= 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)

A

IR @

V

RWM

(mA)

Breakdown Voltage VC @ IPP (Note 6) VC (Volts) (Note 6)

VBR (Note 5) (Volts) @ I

Min Nom Max (mA) (Volts) (A) (mV/°C)

V

T

C

I

PP

@ IPP =

1 A

@ IPP =

10 A

ICTE−5, G ICTE−5 5.0 300 6.0 − − 1.0 9.4 160 7.1 7.5 4.0
ICTE−10, G ICTE−10 10 2.0 11.7 − − 1.0 16.7 90 13.7 14.1 8.0
ICTE−12, G ICTE−12 12 2.0 14.1 − − 1.0 21.2 70 16.1 16.5 12

ICTE−15, G ICTE−15 15 2.0 17.6 − − 1.0 25 60 20.1 20.6 14
ICTE−18, G ICTE−18 18 2.0 21.2 − − 1.0 30 50 24.2 25.2 18
ICTE−22, G ICTE−22 22 2.0 25.9 − − 1.0 37.5 40 29.8 32 21
ICTE−36, G ICTE−36 36 2.0 42.4 − − 1.0 65.2 23 50.6 54.3 26

3. Square waveform, PW = 8.3 ms, non−repetitive duty cycle.

4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
greater than the dc or continuous peak operating voltage level.

measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.

5. V

BR

6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.

), which should be equal to or

RWM

†The “G’’ suffix indicates Pb−Free package available.

QV

BR

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3

1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)

100

10

, PEAK POWER (kW)

PK

P

1

0.1ms

1ms 10ms 100ms

NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5

1 ms 10 ms

t

, PULSE WIDTH

P

Figure 1. Pulse Rating Curve

1N6389, ICTE-45, C, MPTE-45, C

10,000

= 25 C°

A

100

80

60

40

PEAK PULSE DERATING IN % OF

20

PEAK POWER OR CURRENT @ T

0

0 25 50 75 100 125 150 175 200

1N6373, ICTE-5, MPTE-5,

through

MEASURED @
ZERO BIAS

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Pulse Derating Curve

, STEADY STATE POWER DISSIPATION (WATTS)

D

P

1000

100

C, CAPACITANCE (pF)

10

1 10 100 1000

Figure 3. Capacitance versus Breakdown Voltage

5

4

3

2

1

0

25 50 75 100 125 150 175 200

0

TL, LEAD TEMPERATURE (°C)

Figure 4. Steady State Power Derating Figure 5. Pulse Waveform

MEASURED @ V

RWM

VBR, BREAKDOWN VOLTAGE (VOLTS)

3/8″

3/8″

PULSE WIDTH (tP) IS DEFINED AS

t

≤ 10 ms

r

100

, VALUE (%)

PP

I

50

PEAK VALUE − I

HALF VALUE −

t

P

0

01 2 3 4

THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.

PP

I

PP

2

t, TIME (ms)

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4

1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)

1N6373, ICTE-5, MPTE-5,

through

1N6389, ICTE-45, C, MPTE-45, C

1000

TL=25°C

500

=10ms

t

P

200

100

50

20

10

, TEST CURRENT (AMPS)

5

T

I

2

1

0.3 0.5 0.7 1 2 3 5 7 10 20 30
, INSTANTANEOUS INCREASE IN VBR ABOVE V

DV

BR

V

BR(MIN)

=6.0 to 11.7V

19V

21.2V

BR(NOM)

Figure 6. Dynamic Impedance

1

0.7

0.5

0.3

0.2

0.1

0.07

0.05

DERATING FACTOR

0.03

0.02

0.01

0.1 0.2 0.5 2 5 10 501 20 100

Figure 7. Typical Derating Factor for Duty Cycle

1000

42.4V

, TEST CURRENT (AMPS)

T

I

(VOLTS)

D, DUTY CYCLE (%)

1.5KE6.8CA
through

1.5KE200CA

V

=6.8 to 13V

TL=25°C

500

=10ms

t

P

200

100

50

20

10

5

2

1

0.3 0.5 0.7 1 2 3 5 7 10 20 30
DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE V

PULSE WIDTH

10 ms

1 ms

100 ms

10 ms

BR(NOM)

20V

24V

BR(NOM)

43V

75V

180V

120V

(VOLTS)

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5

1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)

APPLICATION NOTES

RESPONSE TIME

In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.

The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper

circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.

Some input impedance represented by Z

is essential to

in

prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.

At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

V

V

in

t

d

t

= TIME DELAY DUE TO CAPACITIVE EFFECT

D

TYPICAL PROTECTION CIRCUIT

Z

in

V

in

Vin (TRANSIENT)

V

L

t

LOAD

V

V

L

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

Vin (TRANSIENT)

V

L

t

Figure 8. Figure 9.

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6

1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)

MOSORB

CASE 41A−04

ISSUE D

B

NOTES:

D

K

P

P

A

K

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.

4. 041A−01 THRU 041A−03 OBSOLETE, NEW
STANDARD 041A−04.

INCHES

DIMAMIN MAX MIN MAX

0.335 0.374 8.50 9.50

B 0.189 0.209 4.80 5.30
D 0.038 0.042 0.96 1.06
K 1.000 −−− 25.40 −−−
P −−− 0.050 −−− 1.27

MILLIMETERS

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7

1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)

Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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1N6373/D

8