ON Semiconductor 1N5333B Technical data

1N5333B Series

Preferred Device

5 Watt Surmetict 40 Zener Voltage Regulators

This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-molded plastic package that offers protection in all common environmental conditions.

http://onsemi.com

Features

•Zener Voltage Range - 3.3 V to 200 V

•ESD Rating of Class 3 (>16 kV) per Human Body Model

•Surge Rating of up to 180 W @ 8.3 ms

•Maximum Limits Guaranteed on up to Six Electrical Parameters

•Pb-Free Packages are Available*

Mechanical Characteristics

CASE: Void free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

260°C, 1/16 in. from the case for 10 seconds

POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any

MAXIMUM RATINGS

Rating Symbol Value Unit

Max. Steady State Power Dissipation

= 75°C, Lead Length = 3/8 in

@ T

Derate above 75°C

Operating and Storage

Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

TJ, T

-65 to +200 °C

stg

mW/°C

Cathode Anode

AXIAL LEAD

CASE 017AA

PLASTIC

MARKING DIAGRAM

53xxB

YYWWG

A = Assembly Location 1N53xxB = Device Number

YY = Year WW = Work Week G = Pb-Free Package

(Note: Microdot may be in either location)

(Refer to Tables on Pages 3 & 4)

ORDERING INFORMATION

Device Package Shipping

1N53xxB, G Axial Lead

(Pb-Free)

1N53xxBRL, G Axial Lead

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

1000 Units/Box

4000/Tape & Reel

†

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 10

1 Publication Order Number:

1N5333B/D

1N5333B Series

ELECTRICAL CHARACTERISTICS (T

otherwise noted, V

Symbol

= 1.2 V Max @ IF = 1.0 A for all types)

Parameter

Reverse Zener Voltage @ I

Reverse Current

Maximum Zener Impedance @ I

Reverse Current

Maximum Zener Impedance @ I

Reverse Leakage Current @ V

Breakdown Voltage

Forward Current

Forward Voltage @ I

Maximum Surge Current @ TA = 25°C

Reverse Zener Voltage Change

Maximum DC Zener Current

ELECTRICAL CHARACTERISTICS (T

= 25°C unless

VRV

Zener Voltage Regulator

= 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)

Leakage

Current

IR @ V

mA Max

(Note 3)

(Note 4)

(Note 5)

Volts A Volts mA

Device

(Note 1)

Zener Voltage (Note 2) Zener Impedance (Note 2)

†

Device

Marking

VZ (Volts) @ IZTZZT @ IZTZZK @ IZKI

Min Nom Max mA

W W

1N5333B, G 1N5333B 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440

1N5334BG 1N5334B 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320 1N5335BG 1N5335B 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220 1N5336BG 1N5336B 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100

1N5337BG 1N5337B 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010

1N5338BG 1N5338B 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930 1N5339B, G 1N5339B 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865

1N5340B, G 1N5340B 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790

1N5341B, G 1N5341B 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765 1N5342BG 1N5342B 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700

1N5343BG 1N5343B 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630 1N5344B, G 1N5344B 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580 1N5345B, G 1N5345B 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545 1N5346BG 1N5346B 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520

1N5347B, G 1N5347B 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

1. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.

2. ZENER VOLTAGE (V

40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode

= 25°C +8°C, -2°C).

3. SURGE CURRENT (I

PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between

) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied

): Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width,

1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located as specified in Note 2 (T

4. VOLTAGE REGULATION (DV

max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting

of the I

contact located as specified in Note 2 (T

5. MAXIMUM REGULATOR CURRENT (I

it applies only to the B-suffix device. The actual I

= 75°C at 3/8″ maximum from the device body.

): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%

= 25°C +8°C, -2°C).

): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,

for any device may not exceed the value of 5 watts divided by the actual VZ of the device.

= 25°C +8°C, -2°C).

†The “G'' suffix indicates Pb-Free package or Pb-Free packages are available.

http://onsemi.com

1N5333B Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)

Leakage

Current

IR @ V

mA Max

(Note 8)

(Note 9)

(Note 10)

Volts A Volts mA

Device

(Note 6)

Zener Voltage (Note 7) Zener Impedance (Note 7)

†

Device

Marking

VZ (Volts) @ IZTZZT @ IZTZZK @ IZKI

Min Nom Max mA

W W

1N5348BG 1N5348B 10.45 11 11.55 125 2.5 125 1 5 8.4 8.0 0.25 430

1N5349B, G 1N5349B 11.4 12 12.6 100 2.5 125 1 2 9.1 7.5 0.25 395 1N5350B, G 1N5350B 12.35 13 13.65 100 2.5 100 1 1 9.9 7.0 0.25 365

1N5351BG 1N5351B 13.3 14 14.7 100 2.5 75 1 1 10.6 6.7 0.25 340

1N5352B, G 1N5352B 14.25 15 15.75 75 2.5 75 1 1 11.5 6.3 0.25 315

1N5353B, G 1N5353B 15.2 16 16.8 75 2.5 75 1 1 12.2 6.0 0.3 295

1N5354B, G 1N5354B 16.15 17 17.85 70 2.5 75 1 0.5 12.9 5.8 0.35 280 1N5355B, G 1N5355B 17.1 18 18.9 65 2.5 75 1 0.5 13.7 5.5 0.4 264 1N5356BG 1N5356B 18.05 19 19.95 65 3 75 1 0.5 14.4 5.3 0.4 250 1N5357BG 1N5357B 19 20 21 65 3 75 1 0.5 15.2 5.1 0.4 237

1N5358B, G 1N5358B 20.9 22 23.1 50 3.5 75 1 0.5 16.7 4.7 0.45 216 1N5359B, G 1N5359B 22.8 24 25.2 50 3.5 100 1 0.5 18.2 4.4 0.55 198

1N5360BG 1N5360B 23.75 25 26.25 50 4 110 1 0.5 19 4.3 0.55 190

1N5361B, G 1N5361B 25.65 27 28.35 50 5 120 1 0.5 20.6 4.1 0.6 176

1N5362BG 1N5362B 26.6 28 29.4 50 6 130 1 0.5 21.2 3.9 0.6 170

1N5363BG 1N5363B 28.5 30 31.5 40 8 140 1 0.5 22.8 3.7 0.6 158 1N5364BG 1N5364B 31.35 33 34.65 40 10 150 1 0.5 25.1 3.5 0.6 144

1N5365B, G 1N5365B 34.2 36 37.8 30 11 160 1 0.5 27.4 3.5 0.65 132

1N5366B, G 1N5366B 37.05 39 40.95 30 14 170 1 0.5 29.7 3.1 0.65 122 1N5367BG 1N5367B 40.85 43 45.15 30 20 190 1 0.5 32.7 2.8 0.7 11 0

1N5368BG 1N5368B 44.65 47 49.35 25 25 210 1 0.5 35.8 2.7 0.8 100

1N5369B, G 1N5369B 48.45 51 53.55 25 27 230 1 0.5 38.8 2.5 0.9 93 1N5370B, G 1N5370B 53.2 56 58.8 20 35 280 1 0.5 42.6 2.3 1.0 86 1N5371BG 1N5371B 57 60 63 20 40 350 1 0.5 45.5 2.2 1.2 79 1N5372BG 1N5372B 58.9 62 65.1 20 42 400 1 0.5 47.1 2.1 1.35 76

1N5373B, G 1N5373B 64.6 68 71.4 20 44 500 1 0.5 51.7 2.0 1.52 70 1N5374BG 1N5374B 71.25 75 78.75 20 45 620 1 0.5 56 1.9 1.6 63 1N5375BG 1N5375B 77.9 82 86.1 15 65 720 1 0.5 62.2 1.8 1.8 58 1N5377BG 1N5377B 86.45 91 95.55 15 75 760 1 0.5 69.2 1.6 2.2 52.5

1N5378B, G 1N5378B 95 100 105 12 90 800 1 0.5 76 1.5 2.5 47.5 1N5380BG 1N5380B 114 120 126 10 170 1150 1 0.5 91.2 1.3 2.5 39.5 1N5381BG 1N5381B 123.5 130 136.5 10 190 1250 1 0.5 98.8 1.2 2.5 36.6

1N5383B, G 1N5383B 142.5 150 157.5 8 330 1500 1 0.5 114 1.1 3.0 31.6

1N5384BG 1N5384B 152 160 168 8 350 1650 1 0.5 122 1.1 3.0 29.4 1N5386BG 1N5386B 171 180 189 5 430 1750 1 0.5 137 1.0 4.0 26.4 1N5387BG 1N5387B 180.5 190 199.5 5 450 1850 1 0.5 144 0.9 5.0 25 1N5388B, G 1N5388B 190 200 210 5 480 1850 1 0.5 152 0.9 5.0 23.6

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

6. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.

7. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied

40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode

= 25°C +8°C, -2°C).

8. SURGE CURRENT (I

PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between

): Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width,

1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located as specified in Note 7 (T

9. VOLTAGE REGULATION (DV

max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting

of the I

contact located as specified in Note 7 (T

10.MAXIMUM REGULATOR CURRENT (I

it applies only to the B-suffix device. The actual I

= 75°C at 3/8″ maximum from the device body.

): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%

= 25°C +8°C, -2°C).

): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,

for any device may not exceed the value of 5 watts divided by the actual VZ of the device.

= 25°C +8°C, -2°C).

†The “G'' suffix indicates Pb-Free package or Pb-Free packages are available.

http://onsemi.com

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