ON Semiconducto NVTFS027N10MCL User Manual

MOSFET - Power, Single

N-Channel

100 V, 26 mW, 28 A

NVTFS027N10MCL

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

• Low Capacitance to Minimize Driver Losses

• NVTFWS027N10MCL − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R

Power Dissipation

(Note 1)

R

q

JC

Continuous Drain
Current R
(Notes 1, 2)

Power Dissipation

(Notes 1, 2)

R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature
Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise noted)

J

Parameter

(Note 1)

q

JC

q

JA

L(pk)

= 1.3 A)

Steady

State

Steady

State

TA = 25°C, t

Parameter Symbol Value Unit

TC = 25°C

TC = 100°C 20

TC = 25°C

TC = 100°C 23

TA = 25°C

TA = 100°C 5.2

TA = 25°C

TA = 100°C 1.6

= 10 ms

p

Symbol Value Unit

DSS

GS

I

D

P

D

I

D

P

D

I

DM

TJ, T

stg

S

E

AS

T

L

R

q

JC

R

q

JA

2

, 2 oz. Cu pad.

100 V

±20 V

28

46

7.4

3.1

119 A

−55 to
+175

35 A

414 mJ

260 °C

3.3

47.7

A

W

A

W

°C

°C/W

www.onsemi.com

V

(BR)DSS

100 V

G (4)

R

MAX ID MAX

DS(on)

26 mW @ 10 V

35 mW @ 4.5 V

N−Channel

D (5 − 8)

28 A

S (1, 2, 3)

MARKING

1

WDFN8

(m8FL)

CASE 511AB

WDFNW8

(m8FL WF)

CASE 515AN

XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

DIAGRAMS

1

XXXX

AYWWG

G

XXXX

AYWWG

G

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2020

February, 2021 − Rev. 0

1 Publication Order Number:

NVTFS027N10MCL/D

NVTFS027N10MCL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 100 V

DS

TJ = 25°C 1.0

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

100 V

53

mV/°C

mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

VGS = VDS, ID = 38 mA

VGS = 10 V ID = 7 A 21 26

VGS = 4.5 V ID = 5 A 28 35

VDS = 10 V, ID = 7 A 25 S

1 3 V

−6 mV/°C

mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Resistance R

Total Gate Charge Q

Total Gate Charge Q

G(TOT)

G(TOT)

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

ISS

OSS

RSS

G

G(TH)

GS

GD

GP

VGS = 0 V, f = 1 MHz, VDS = 50 V

VGS = 4.5 V, VDS = 50 V; ID = 7 A 5.5

VGS = 10 V, VDS = 50 V; ID = 7 A 11.5

VGS = 10 V, VDS = 50 V; ID = 7 A

800

300

4

0.41

1.3

2.1

1.2

2.5 V

pF

W

nC

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 50 V,

I

= 7 A

D

7.4

19

2.9

2

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Reverse Recovery Charge Q

Charge Time t

Discharge Time t

V

SD

RR

RR

a

b

V

GS

V

= 0 V, I

GS

V

= 0 V, dIS/dt = 100 A/ms, I

GS

= 0 V, I

= 7 A, TJ = 25°C 0.84 1.3

S

= 7 A, TJ = 125°C 0.73

S

S

= 3 A

28 ns

17 nC

13.9 ns

14.2 ns

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

www.onsemi.com

2

NVTFS027N10MCL

TYPICAL CHARACTERISTICS

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

40

35

30

25

20

, DRAIN−TO−SOURCE RESISTANCE (mW)

15

1

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

25

20

15

10

D

35

30

25

20

, DRAIN−TO−SOURCE RESISTANCE (mW)

15

DS(on)

R

VDS = 10 V

5

0

TJ = 25°C

TJ = 25°C

TJ = 150°C

154

TJ = −55°C

320

VGS = 4.5 V

VGS = 10 V

7

91113

4

1551

VGS = 10 V to 3.2 V

3.0 V

2.8 V

2.6 V
, DRAIN CURRENT (A)

2.4 V

3210

TJ = 25°C

= 7 A

I

D

533

49

862

I

107

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

2.5

2.0

1.5

1.0

0.5

VGS = 10 V

= 7 A

I

D

50

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

150

17512510075250−25−50

Figure 5. On−Resistance Variation with

Temperature

100

10

TJ = 175°C

1

TJ = 150°C

TJ = 125°C

0.1

TJ = 85°C

0.01

, LEAKAGE (nA)

0.001

DSS

I

0.0001

0.00001

TJ = 25°C

Figure 6. Drain−to−Source Leakage Current

30 50 80 100

40

vs. Voltage

www.onsemi.com

3

9070602010