ON Semiconducto NCS7030, NCS7031, NCV7030, NCV7031 User Manual

Current Sense Amplifier,
80V Common-Mode
Voltage, Unidirectional

Product Preview

NCS7030, NCS7031,
NCV7030, NCV7031

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The NCS7030 and NCS7031 are high voltage, current sense

amplifiers. They are available with gain options of 14 V/V and 20
V/V, with a maximum ±0.3 % gain error over the entire temperature
range. Each part consists of a preamplifier and buffer with access to
output and input via A1 and A2 pins for an intermediate filter network
or modified gain. The current sense amplifiers offer excellent input
common−mode rejection from −5 V to 80 V. They can perform
unidirectional current measurements across a sense resistor in a
variety of applications. Automotive qualified options are available
under NCV prefix. All versions are specified over the extended
operating temperature range from −40°C to 125°C.

Features

• Bandwidth: 100 kHz

• Input Offset Voltage: ±300 mV Max Over Temp

• Offset Drift over Temperature: ±3 mV/°C max

• Gain Error: ±0.3 % Max Over Temp

• Quiescent Current: 3 mA Typ

• Supply Voltage: 4.5 V to 5.5 V

• Common−Mode Input Voltage Range: −5 V to 80 V Operating,

−14 V to 85 V Survival

• CMRR: 90 dB Min

• PSRR: 70 dB Min

• Low−Pass Filter (1−pole or 2−pole)

• These are Pb−free Devices

Typical Applications

• Telecom Equipment

• Power Supply Designs

• Diesel Injection Control

• Automotive

• Motor Control

This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.

8

1

Micro8

CASE 846A−02

MARKING DIAGRAM

8

XXXX
AYW G

G

1

XXXXX = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

PIN CONNECTIONS

1

−IN

GND

2

NCS7031

3

4

1

2

NCS7030

3

4

G = 20

G = 14

A1

A2 OUT

−IN

GND

A1

A2 OUT

SOIC−8 NB

CASE 751−07

8

XXXXX
ALYWX

G

1

+IN

8

NC

7

V

6

S

5

8

+IN

V

7

S

NC

6

5

© Semiconductor Components Industries, LLC, 2015

October, 2020 − Rev. P5

ORDERING INFORMATION

See detailed ordering and shipping information on page 10 of
this data sheet.

1 Publication Order Number:

NCS7030/D

NCS7030, NCS7031, NCV7030, NCV7031

+IN

−IN

high−side
switch

EMI Filter

5 V

load

200 kW

V

S

NCS703x

200 kW

EMI Filter

+

−

V

S

or

G = x7

A1 A2

100 kW

Figure 1. Simplified Block Diagram

OUT

+

−G = x10

sense
resistor

5 V

G = x2

10 kW

10 kW

+IN

−IN

GND

NCS703x

V

S

OUT

OUT

A1

A2

sense
resistor

Low−Side Current Sensing High−Side Current Sensing

+IN

−IN

GND

A1

A2

load

low−side
switch

Figure 2. Application Schematic

PIN FUNCTION DESCRIPTION

NCS7031 (G = 20) Pinout NCS7030 (G = 14) Pinout Pin Name Description

1 1 −IN Inverting input – connect to sense resistor

2 2 GND Device ground

3 3 A1 Pre−amp output connection

4 4 A2 Buffer amp input connection

5 5 OUT Device output

6 7 V

7 6 NC No connect

8 8 +IN Non−inverting input – connect to sense resistor

S

Power supply connection

GND

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NCS7030, NCS7031, NCV7030, NCV7031

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Supply Voltage Range (Note 1) V

Input Common−Mode Range V

Differential Input Voltage V

Maximum Input Current I

Maximum Output Current I

Continuous Total Power Dissipation P

Maximum Junction Temperature T

Storage Temperature Range T

S

CM

ID

I

O

D

J(max)

STG

ESD Capability (Note 2)

Human Body Model, Input pins
Human Body Model, All other pins
Charged Device Model

HBM
HBM
CDM

Latch−Up Current (Note 3) ±100 mA

Moisture Sensitivity Level MSL Level 1 −

Lead Temperature Soldering

T

SLD

Reflow (SMD Styles Only), Pb−Free Versions (Note 4)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JS−001−2017 (AEC−Q100−002)
ESD Charged Device Model tested per JS−002−2014 (AEC−Q100−011)

3. Latch−up current maximum rating: v100 mA per JEDEC standard JESD78E (AEC−Q100−004).

4. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

7 V

−14 to 85 V

±V

S

±10 mA

±50 mA

200 mW

150 °C

−65 to 150 °C

±8000
±4000

TBD

260 °C

V

V

THERMAL CHARACTERISTICS (Note 5)

Rating

Thermal Resistance, Junction−to−Air

5. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

6. Values based on four layer board with copper area of 200 mm2 of 1 oz copper thickness and FR4 PCB substrate.

Symbol Package Value (Note 6) Unit

Micro8 166 °C/W

q

JA

SOIC−8 130 °C/W

OPERATING RANGES (Note 7)

Rating

Supply Voltage V

Common−Mode Input Voltage Range V

Ambient Temperature T

7. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

Errata Note: Engineering samples have a low voltage supply characteristic that will cause sinusoidal oscillation on the output under the
following conditions: Vs < 4.5V and VCM < 1.2V. The oscillation is large signal (approximately 1 Vpp with a frequency around 32 kHz). This
is a known issue for samples that will be corrected on production devices.

Symbol Min Max Unit

S

CM

A

4.5 5.5 V

−5 80 V

−40 125 °C

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NCS7030, NCS7031, NCV7030, NCV7031

ELECTRICAL CARACTERISTICS At V

Boldface limits apply over the specified temperature range, T

Parameter

= 5 V, TA = +25°C, VCM = 12 V, RL ≥ 10 kW, unless otherwise noted.

S

A = –40°C to 125°C, guaranteed by characterization and/or design.

Symbol Test Conditions Min Typ Max Unit

GAIN

Total Gain, Preamplifier and Buffer

Gain Error G

Gain Drift

DG/DT

G NCS7030

NCS7031

e

TA = −40°C to +125°C +0.3 %

TA = −40°C to +125°C +20

14
20

ppm / °C

INPUT

Input Offset Voltage

V

OS

TA = +25°C ±100 +300

TA = −40°C to +125°C +300

Input Offset Voltage Drift

DV/DT

Common−Mode Rejection Ratio CMRR V

TA = −40°C to +125°C +3

= −5 to 80 V,

CM

90 dB

mV / °C

f = DC to 20 kHz

Input Bias Current (Note 8) I

IB

TBD TBD

PREAMPLIFIER

Gain

Gain Error G

Output Voltage High V

Output Voltage Low V

Output Resistance R

G NCS7030

NCS7031

e

OH

OL

PRE

TA = −40°C to +125°C +0.3 %

V

− 0.1 V

S

98 100 102

7

10

− 0.05 V

S

25 mV

OUTPUT BUFFER

Gain

Gain Error G

Output Voltage High V

Output Voltage Low V

Input Bias Current I

G 2 V/V

+0.3 %

50 mV

OH

OL

IB

e

V

− 0.1 V

S

− 0.05 V

S

40 50 nA

DYNAMIC PERFORMANCE

Signal Bandwidth (−3dB)

BW VID = 0.1 V

p−p

100 kHz

Slew Rate SR VID = 0 to 200 mV step 1

NOISE

Voltage Noise, Peak−to−Peak

Voltage Noise Density e

V

n

N

f = 0.1 Hz to 10 Hz 10

f = 1 kHz 275 nV / ǠHz

POWER SUPPLY

Quiescent Current

I

DD

TA = +25°C 3 TBD

TA = −40°C to +125°C TBD

Power Supply Rejection Ratio PSRR 70 dB

8. Guaranteed by characterization and/or design.

V/V

μV

mA

V/V

kW

V / ms

mV

p−p

mA

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