onsemi J175, J176, MMBFJ175, MMBFJ176, MMBFJ177 Data Sheet

Page 1
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177
1. Drain
1
2
3
1
2
3
Straight Lead Bent Lead
TO-92
Bulk Packing T ape & Reel
Ammo Packing
2. Gate
3. Source
SOT-23
Mark: 6W / 6X / 6Y
G
D
S
Note: Source & drain are interchangeable.
P-Channel Switch
Description
This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88.
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package
Part Number
175-D26Z J175 TO-92 3L Tape and Reel
J
J
176-D74Z J176 TO-92 3L Ammo
MMBFJ175 6W SOT-23 3L Tape and Reel
MMBFJ176 6X SOT-23 3L Tape and Reel
MMBFJ177 6Y SOT-23 3L Tape and Reel
©1997 Semic
October-2017, Rev. 2
onductor Components Industries, LLC.
Marking
Package Packing Method
Publication Order Number:
J175/D
Page 2
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera­ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi­tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T
Symbol
V
DG
V
GS
I
GF
, T
T
J
STG
Drain-Gate Voltage -30 V
Gate-Source Voltage 30 V
Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to + 150 °C
Parameter
= 25°C unless otherwise noted.
A
Value Unit
Notes:
1. Thes
e ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
Symbol Parameter
P
R
θJC
R
θJA
Total Device Dissipation 350 225 mW
D
Derate Above 25°C2.81.8mW/°C Thermal Resistance, Junction to Case 125 °C/W Thermal Resistance, Junction to Ambient 357 556 °C/W
J175 / J176
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
MMBFJ175 /
(3)
MMBFJ176 /
MMBFJ177
Unit
(3)
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2
Page 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
On Characteristics
I
DSS
r
DS(on)
Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 30 V
Gate Reverse Current VGS = 20 V, VDS = 0 1.0 nA
J175 / MMBFJ175
Gate-Source Cut-Off Voltage VDS = -15 V, ID = -10 nA
MMBFJ176
3.0 6.0
1.0 4.0
MMBFJ177 0.8 2.5
Zero-Gate Voltage Drain Current
(4)
VDS = -15 V, IGS = 0
J175 / MMBFJ175
MMBFJ176
-7.0 -60.0
-2.0 -25.0
MMBFJ177 -1.5 -20.0
Drain-Source On Resistance V
≤ 0.1 V, V
DS
GS
J175 / MMBFJ175
= 0
MMBFJ176
125
250
MMBFJ177 300
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
VJ176 /
mAJ176 /
ΩJ176 /
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
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3
Page 4
Typical Performance Characteristics
-5-4-3-2-10
-20
-16
-12
-8
-4
0
V - DRAIN-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
DS
D
1.0 V
2.5 V
2.0 V
0.5 V
1.5 V
V = 0 V
GS
T = 25°C
TYP V = 4.5 V
GS(off)
A
3.0 V
3.5 V
r - DRAIN "ON" RESISTANCE
(
ΩΩ
)
12 510
1
5
10
50
100
10
50
100
500
1,000
V - GATE CUTOFF VOLTAGE (V)
g - TRANSCONDUCTANCE (mmhos)
GS (OFF)
fs
I , g @ V = 15V, V = 0 PULSED r @ -100 mV, V = 0 V @ V = - 15V, I = - 1.0 μA
GS(off)
DSS
r
D
I
DSS
DS
DS
GS
DS
DS
GS
fs
DS
DS
g
fs
01234
-32
-24
-16
-8
0
V - GATE-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
GS
D
V = - 4.5 V
GS(off)
25°C
V = - 15 V
DS
V = 2.5 V
GS(off)
125°C
- 55°C
25°C
125°C
- 55°C
01234
0
4
8
12
16
V - GATE-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
GS
D
V = - 4.5 V
GS(off)
25°C
V = - 15 V
DS
V = 2.5 V
GS(off)
125°C
- 55°C
25°C
- 55°C
125°C
0 0.2 0.4 0.6 0.8 1
1
2
5
10
20
50
100
V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)
r - NORMALIZED RESISTANCE
GS
DS
r =
DS
V @ 5.0V, 10 μA
GS(off)
r
DS
________
V
GS(off)
V
GS
1 -
GS(off)
(
Ω ) Ω )
Ω ) Ω )
Ω )
0.01 0.1 1 10
1
10
100
1000
I - DRAIN CURRENT (mA)
g - OUTPUT CONDUCTANCE ( mhos)
D
os
V = - 4.5V
GS(off)
f = 1.0 kHz
μ
V = - 2.5V
GS(off)
-20V
-10V
-10V
-20V
-5.0V
-5.0V
_
_
_
_
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
Figure 3. Common Drain-Source
Figure 5. Transfer Characteristics
Figure 4. Parameter Interactions
Figure 6. Transfer Characteristics
Figure 7. Normalized Drain Resistance vs.
Bias Voltage
Figure 8. Output Conductance vs. Drain Current
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Page 5
Typical Performance Characteristics (Continued)
0.1 1 10 100
0.1
0.5
1
5
10
I - DRAIN CURRENT (mA)
g - TRANSCONDUCTANCE (mmhos)
D
fs
V = 2.5V
GS(off)
V = -15V
f = 1.0 kHz
DG
V = 6.0V
GS(off)
- 55°C 25°C
125°C
25°C
_
_
_
_
048121620
1
5
10
100
V - GATE-SOURCE VOLTAGE (V)
C (C ) - CAPACITANCE (pF)
rs
GS
is
C (V = -15V)
is
DS
C (V = -15V)
rs
DS
f = 0.1 - 1.0 MHz
0.01 0.1 1 10 100
1
5
10
50
100
f - FREQUENCY (kHz)
e - NOISE VOLTAGE (nV / Hz)
n
V = - 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2f @ f ≥ 1.0 kHz
DG
I = 5.0 mA
D
I = - 0.2 mA
D
√
-50 0 50 100 150
10
50
100
500
1000
T - AMBIENT TEMPERATURE ( C)
r - DRAIN "ON" RESISTANCE
DS
A
o
(
Ω
)
V = 2.5V
GS(off)
V = 4.5V
GS(off)
V = 8.0V
GS(off)
V = -100 mV
V = 0
DS
GS
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
Figure 9. Transconductance vs. Drain Current
Figure 11. Noise Voltage vs. Frequency
Figure 10. Capacitance vs. Voltage
Figure 12. Channel Resistance vs. Temperature
Figure 13. Power Dissipation vs.
Ambient Temperature
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Page 6
Physical Dimensions
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form
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6
Page 7
Physical Dimensions (Continued)
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) RE
FERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIME
NSIONS ARE IN MILLIMETERS.
C)
DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D)
DIMENSIONING AND TOLERANCING PER
A
SME Y14.5M - 1994.
E) DRAWING FILE
NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30
+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
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7
Page 8
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