SS12, SS14
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
. . . employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm tape, 5000 units per 13 inch reel
• Polarity: Cathode Lead Indicated by Polarity Band
• Marking: SS12, SS14
• Device Meets MSL 1 Requirements
• ESD Ratings: Human Body Model, 3B (> 8000 V)
Machine Model, B (> 200 V)
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20, 40 VOLTS
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
SS1x
SS1x = Device Code
x = 2 or 4
Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 2
ORDERING INFORMATION
Device Package Shipping
SS12T3 SMA 5000/Tape & Reel
SS14T3 SMA 5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
†
SS12/D
SS12, SS14
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage SS12
SS14
Average Rectified Forward Current
(At Rated VR, TC = 120°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 120°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage/Operating Case Temperature T
Operating Junction Temperature T
Voltage Rate of Change
(Rated VR, TJ = 25°C)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 1)
ELECTRICAL CHARACTERISTICS
see Figure 2 for other Values (IF = 1.0 A)
see Figure 4 for other Values (VR = 20 V)
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
2. Pulse Test: Pulse Width ≤ 250 s, Duty Cycle ≤2.0%.
(V
= 40 V)
R
V
V
I
I
stg
RRM
RWM
V
R
I
O
FRM
FSM
, T
J
20
40
1.0 A
2.0 A
60 A
C
−55 to +150 °C
−55 to +150 °C
V
dv/dt 10,000 V/s
Symbol Value Unit
R
JL
R
JA
V
F
35
86
TJ = 25°C
°C/W
V
0.47
I
R
TJ = 25°C TJ = 100°C
0.045
0.1
2.0
5.0
mA
http://onsemi.com
2
SS12, SS14
10
TJ = 100°C
1
TJ = 150°C
CURRENT (A)
, INSTANTANEOUS FORWARD
F
I
0.1
0.10 0.30 0.50 0.70 0.90
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
TJ = 25°C
TJ = −55°C
Figure 1. Typical Forward Voltage
100E−3
10E−3
1E−3
TJ = 150°C
TJ = 100°C
10
TJ = 100°C
1
CURRENT (A)
, INSTANTANEOUS FORWARD
F
I
TJ = 150°C
0.1
0.10 0.30 0.50 0.70 0.90
VF, MAXIMUM FORWARD VOLTAGE (V)
TJ = 25°C
TJ = −55°C
Figure 2. Maximum Forward Voltage
100E−3
TJ = 150°C
10E−3
1E−3
TJ = 100°C
100E−6
, REVERSE CURRENT (A)
10E−6
R
I
1E−6
0 10203040
VR, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 3. Typical Reverse Current
1.8
1.6
1.4
1.2
1
(A)
0.8
Ipk/IO = 10
0.6
Ipk/IO = 20
0.4
0.2
, AVERAGE FORWARD CURRENT
O
I
0
25 45 65 85 105 125 145
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
TJ = 25°C
dc
Square Wave
Ipk/IO = p
Ipk/IO = 5
freq = 20 kHz
100E−6
TJ = 25°C
10E−6
, MAXIMUM REVERSE CURRENT (A)
R
I
1E−6
010203040
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
0.25
Ipk/IO = 10
0.2
Ipk/IO = 20
0.15
0.1
TION (W)
0.05
, AVERAGE POWER DISSIPA-
FO
P
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.
IO, AVERAGE FORWARD CURRENT (A)
Ipk/IO = 5
Ipk/IO = p
Square Wave
dc
Figure 6. Forward Power Dissipation
http://onsemi.com
3