ON SMF05T1 Schematic [ru]

SMF05T1

Quad Array for ESD
Protection

ESD Protection Diodes with Low
Clamping Voltage

This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.

Specification Features

• Low Clamping Voltage

• Stand Off Voltage 5 V

• Low Leakage < 5 mA @ 5 V

• SC−88A Package Allows Four Separate Unidirectional

Configurations

• IEC6100−4−2 Level 4 ESD Protection

• Pb−Free Packages are Available*

Mechanical Characteristics

• Void Free, Transfer−Molded, Thermosetting Plastic Case

• Corrosion Resistant Finish, Easily Solderable

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

MAXIMUM RATINGS (T

Characteristic

Peak Power Dissipation @ 8 X 20 ms

@T

≤ 25°C

A

Steady State Power − 1 Diode

(Note 1)

Thermal Resistance

Junction−to−Ambient
Above 25°C, Derate

Maximum Junction Temperature T

Operating Junction and Storage

Temperature Range

ESD Discharge

IEC61000−4−2, Air Discharge
IEC61000−4−2, Contact Discharge

Lead Solder Temperature

(10 seconds duration)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Only 1 diode under power. For all 4 diodes under power, P

Mounted on FR−4 board with min pad.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

See Application Note AND8308/D for further description of survivability specs.

= 25°C unless otherwise noted)

A

Symbol Value Unit

P

pk

P

D

R

q

JA

Jmax

TJ T

T

−55 to +150 °C

stg

L

200 W

385 mW

325

3.1

150 °C

30
30

260 °C

°C/W

mW/°C

kV

will be 25%.

D

Cathode

Cathode

SMF05T1 SC−88A 3000/Tape & Reel

SMF05T1G SC−88A

SMF05T2G SC−88A

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

http://onsemi.com

MARKING
DIAGRAM

45

SC−88A/SOT−323

CASE 419A

STYLE 5

60 = Device Marking
M = One Digit Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

1

2

Anode

3

60 MG

G

132

5

Cathode

4

Cathode

ORDERING INFORMATION

Device Package Shipping

(Pb−Free)

(Pb−Free)

3000/Tape & Reel

3000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2009

August, 2009 − Rev. 4

1 Publication Order Number:

SMF05T1/D

SMF05T1

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

V

I

V

RWM

V

V

P

Maximum Reverse Peak Pulse Current

PP

Clamping Voltage @ I

C

Working Peak Reverse Voltage

I

Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

I

Test Current

T

I

Forward Current

F

Forward Voltage @ I

F

Peak Power Dissipation

pk

C Capacitance @ VR = 0 and f = 1.0 MHz

Parameter

PP

T

F

RWM

VCV

V

RWM

BR

Uni−Directional TVS

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS

Breakdown

Voltage

@ 1 mA

V

BR

(V)

Device

Min Max Max Max IPP (A) VC (V) IPP (A) VC (V)

SMF05 6.0 7.2 5.0 90 1.25 1.0 9.5 12 12.5 Figures 1 and 2

2. Non−repetitive current per Figure 5. Derate per Figure 6.

3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Leakage

Current

@ V

I

R

5 V (mA)

RWM

=

Capacitance

@ 0 V Bias

(pF)

Max VF @

= 200 mA

I

F

(V)

Max Clamping

Voltage (V

@ I

(Note 2)

PP

C

)

I

I

F

I

V

R

F

I

T

I

PP

Max Clamping

Voltage (V

@ I

(Note 2)

PP

C

)

Per IEC61000−4−2

(Note 3)

See Below

V

V

C

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

http://onsemi.com

2