ON PZT2222AT1G Schematic [ru]
PZT2222A
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
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Features
• PNP Complement is PZT2907AT1
• The SOT−223 Package Can be Soldered Using Wave or Reflow
• SOT−223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints
• The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage
(Open Collector)
Collector Current I
Total Power Dissipation
Storage Temperature Range° T
Junction Temperature° T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
0.059 inches; mounting pad for the collector lead min. 0.93 inches
up to T
= 25°C (Note 1)
A
V
CEO
CBO
EBO
C
P
D
stg
J
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance,
Junction−to−Ambient
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
R
q
JA
T
L
40 Vdc
75 Vdc
6.0 Vdc
600 mAdc
1.5
− 65 to +150 °C
150 °C
83.3 °C/W
260
10
W
2
.
°C
Sec
SOT−223 PACKAGE
NPN SILICON TRANSISTOR
SURFACE MOUNT
4
1
2
SOT−223 (TO−261)
BASE
MARKING DIAGRAM
A = Assembly Location
Y = Year
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
PZT2222AT1G SOT−223
SPZT2222AT1G SOT−223
PZT2222AT3G SOT−223
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CASE 318E−04
STYLE 1
COLLECTOR
2, 4
1
3
EMITTER
AYM
P1FG
G
1,000 Tape & Reel
(Pb−Free)
1,000 Tape & Reel
(Pb−Free)
4,000 Tape & Reel
(Pb−Free)
†
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 9
1 Publication Order Number:
PZT2222AT1/D
PZT2222A
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
= 10 mAdc, IB = 0) V
C
V
V
Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) I
Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) I
Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) I
Collector−Base Cutoff Current
= 60 Vdc, IE = 0)
(V
CB
= 60 Vdc, IE = 0, TA = 125°C)
(V
CB
ON CHARACTERISTICS
DC Current Gain
(I
= 0.1 mAdc, VCE = 10 Vdc)
C
= 1.0 mAdc, VCE = 10 Vdc)
(I
C
(I
= 10 mAdc, VCE = 10 Vdc)
C
(I
= 10 mAdc, VCE = 10 Vdc, TA = − 55°C)
C
(I
= 150 mAdc, VCE = 10 Vdc)
C
(I
= 150 mAdc, VCE = 1.0 Vdc)
C
(I
= 500 mAdc, VCE = 10 Vdc)
C
Collector−Emitter Saturation Voltages
(I
= 150 mAdc, IB = 15 mAdc)
C
= 500 mAdc, IB = 50 mAdc)
(I
C
Base−Emitter Saturation Voltages
(I
= 150 mAdc, IB = 15 mAdc)
C
= 500 mAdc, IB = 50 mAdc)
(I
C
Input Impedance°
(V
= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
CE
= 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
(V
CE
Voltage Feedback Ratio
(V
= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
CE
= 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
(V
CE
Small−Signal Current Gain
(V
= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
CE
= 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
(V
CE
Output Admittance°
(V
= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
CE
= 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
(V
CE
Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
= 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
(I
C
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C
SWITCHING TIMES (TA = 25°C)
Delay Time
Rise Time t
Storage Time
Fall Time t
(VCC = 30 Vdc, IC = 150 mAdc,
I
= 15 mAdc, V
B(on)
EB(off)
= 0.5 Vdc)
Figure 1
(VCC = 30 Vdc, IC = 150 mAdc,
I
= I
B(on)
= 15 mAdc)
B(off)
Figure 2
Symbol Min Max Unit
(BR)CEO
(BR)CBO
(BR)EBO
BEX
CEX
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
°hie°
h
re
ťhfeť
°hoe°
40 − Vdc
°75° − Vdc
6.0 − Vdc
− 20 nAdc
− 10 nAdc
− 100 nAdc
−
−
10
10
nAdc
mAdc
−
35
50
70
35
100
50
40
−
−
−
−
300
−
−
Vdc
−
−
0.3
1.0
Vdc
0.6
−
1.2
2.0
kW
2.0
0.25
−
−
8.0
1.25
8.0x10
4.0x10
−
−4
−4
−
50
75
300
375
mmhos
5.0
25
35
200
F − 4.0 dB
f
T
MHz
300 −
c
e
t
d
r
t
s
f
− 8.0 pF
− 25 pF
− 10 ns
− 25
− 225 ns
− 60
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2
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