ON NZQA5V6AXV5, NZQA6V8AXV5 Schematic [ru]

NZQA5V6AXV5 Series

Transient Voltage Suppressors

ESD Protection Diode with Low Clamping
Voltage

This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a premium.

Features

• Low Clamping Voltage

• Small SOT−553 SMT Package

• Stand Off Voltage: 3 V

• Low Leakage Current

• Four Separate Unidirectional Configurations for Protection

• ESD Protection: IEC61000−4−2: Level 4 ESD Protection

MILSTD 883C − Method 3015−6: Class 3

• Complies to USB 1.1 Low Speed & Full Speed Specifications

• These are Pb−Free Devices

Benefits

• Provides Protection for ESD Industry Standards: IEC 61000, HBM

• Protects Four Lines Against Transient Voltage Conditions

• Minimize Power Consumption of the System

• Minimize PCB Board Space

Typical Applications

• Instrumentation Equipment

• Serial and Parallel Ports

• Microprocessor Based Equipment

• Notebooks, Desktops, Servers

• Cellular and Portable Equipment

MAXIMUM RATINGS (T

Characteristic Symbol Value Unit

Peak Power Dissipation (Note 1) P
Steady State Power − 1 Diode (Note 2) P
Thermal Resistance,

Junction−to−Ambient
Above 25°C, Derate

Maximum Junction Temperature T
Operating Junction and Storage

Temperature Range

Lead Solder Temperature (10 seconds

duration)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Non−repetitive current per Figure 5.

2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%.

Mounted on FR−4 board with min pad.

See Application Note AND8308/D for further description of
survivability specs.

= 25°C unless otherwise noted)

A

PK

D

R

q

JA

Jmax

TJ T

stg

T

L

20 W
380 mW
327

3.05

150 °C

−55 to
+150

260 °C

mW/°C

°C/W

°C

http://onsemi.com

1

2

3

SOT−553

CASE 463B

PLASTIC

5

4

MARKING DIAGRAM

xx M G

G

xx = Device Code
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

NZQA5V6AXV5T1 SOT−553* 4000/Tape & Reel

NZQA5V6AXV5T1G SOT−553* 4000/Tape & Reel

NZQA6V8AXV5T1 SOT−553* 4000/Tape & Reel

NZQA6V8AXV5T1G SOT−553* 4000/Tape & Reel

NZQA6V8AXV5T3 16000/Tape & Reel

NZQA6V8AXV5T3G 16000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

*This package is inherently Pb−Free.

SOT−553*

SOT−553*

†

© Semiconductor Components Industries, LLC, 2009

September, 2009 − Rev. 7

1 Publication Order Number:

NZQA5V6AXV5/D

NZQA5V6AXV5 Series

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol Parameter

V

QV

I

PP

V

RWM

I

V

I

I

V

Z

I

ZK

Z

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

C

PP

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

Test Current

T

Maximum Temperature Coefficient of V

BR

Forward Current

F

Forward Voltage @ I

F

Maximum Zener Impedance @ I

ZT

F

Reverse Current

Maximum Zener Impedance @ I

ZK

T

ZT

ZK

BR

RWM

VCV

BR

V

RWM

I

I

F

I

V

R

F

I

T

I

PP

Uni−Directional

V

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS (T

Breakdown

Voltage

VBR @ 1 mA (V)

= 25°C)

A

Leakage

Current

IRM @ V

RM

VC Max @ I

(Note 4)

Capacitance

PP

Typ

@ 0 V Bias

(pF)

(Note 3)

Typ

Capacitance

@ 3 V Bias

(pF)

(Note 3)

V

C

Per

Device

Device

Marking

Min Nom Max V

RWM

I

RWM

(mA)

V
(V)

I

C

PP

(A)

Typ Max Typ Max

IEC61000−4−2

(Note 5)

NZQA5V6AXV5 5P 5.3 5.6 5.9 3.0 1.0 13 1.6 13 17 7.0 11.5 Figures 1 and 2

(See Below)

NZQA6V8AXV5 6H 6.47 6.8 7.14 4.3 1.0 13 1.6 12 15 6.7 9.5

3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C

4. Surge current waveform per Figure 5.

5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

http://onsemi.com

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

2