ON NTR4503N, NVTR4503N Schematic [ru]

NTR4503N, NVTR4503N

l

l

Power MOSFET

30 V, 2.5 A, Single N−Channel, SOT−23

Features

• Leading Planar Technology for Low Gate Charge / Fast Switching

• 4.5 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)

• AEC Q101 Qualified − NVTR4503N

• These Devices are Pb−Free and are RoHS Compliant

Applications

• DC−DC Conversion

• Load/Power Switch for Portables

• Load/Power Switch for Computing

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V
Gate−to−Source Voltage V

Continuous Drain
Current (Note 1)

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2)

Power Dissipation
(Note 2)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I
Peak Source Current

(Diode Forward)
Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)

1. Surface−mounted on FR4 board using 1 in sq pad size.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

= 25°C unless otherwise noted)

J

Symbol Value Unit

DSS

GS

Steady
State

t ≤ 10 s TA = 25°C 2.5
Steady

State
Steady

State

TA = 25°C
TA = 85°C 1.5

TA = 25°C P

TA = 25°C
TA = 85°C 1.1
TA = 25°C P

tp =10 ms

tp =10 ms

I

D

D

I

D

D

I

DM

−55 to

T

stg

S

I

SM

T

L

R

q

JA

R

q

JA

R

q

JA

30 V

±20 V

2.0

0.73 W

1.5

0.42 W

10 A

150

2.0 A

4.0 A

260 °C

170
100
300

°C

°C/W

A

A

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(BR)DSS

30 V

TYP

R

DS(on)

85 mW @ 10 V

105 mW @ 4.5 V

ID MAXV

2.5 A

N−Channel

D

G

S

MARKING DIAGRAM/

3

1

2

SOT−23
CASE 318
STYLE 21

TR3 = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

3

Drain

TR3 MG

G

1

Gate2Source

ORDERING INFORMATION

Device Package Shipping

NTR4503NT1G SOT−23

(Pb−Free)

NVTR4503NT1G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000 / Tape & Ree

3000 / Tape & Ree

†

© Semiconductor Components Industries, LLC, 2015

May, 2015 − Rev. 7

1 Publication Order Number:

NTR4503N/D

NTR4503N, NVTR4503N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Parameter Symbol Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

DSS

GSS

V

GS

V

GS

V

GS

= 0 V, V

V

DS

= 0 V, V

= 0 V, I
= 0 V, V

= 250 mA

D

DS

= 24 V, TJ = 125°C 10

DS

= "20 V "100 nA

GS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V
Drain−to−Source On−Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

V
V
V

GS

GS

GS

DS

= VDS, I

= 10 V, I
= 4.5 V, I
= 4.5 V, I

= 250 mA

D

= 2.5 A 85 110 mW

D

= 2.0 A 105 140

D

= 2.5 A 5.3 S

D

CHARGES AND CAPACITANCES

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

C

iss
oss
rss

iss
oss
rss

G(TOT)

G(TH)

GS
GD

G(TOT)

G(TH)

GS
GD

V

= 0 V, f = 1.0 MHz,

GS

V

GS

V

GS

V

GS

V

= 15 V

DS

= 0 V, f = 1.0 MHz,

V

= 24 V

DS

= 10 V, V

I

= 2.5 A

D

= 4.5 V, V

I

= 2.5 A

D

DS

DS

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t

t

d(on)

d(off)

d(on)

d(off)

r

f

r

f

V

GS

I

D

V

GS

= 2.5 A, R

I

D

= 10 V, V

= 1 A, R

= 10 V, V

DD

= 6 W

G

DD

= 2.5 W

G

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage
Reverse Recovery Time t
Reverse Recovery Charge Q

V

SD

RR

RR

V

GS

V

= 0 V, I

GS

dIS/dt = 100 A/ms

= 0 V, I

= 2.0 A 0.85 1.2 V

S

= 2.0 A,

S

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

30 36 V

= 24 V 1.0 mA

1.0 1.75 3.0 V

135

pF
52
15

130 250

pF
42 75
13 25

nC

= 15 V,

3.6 7.0

0.3

0.6

0.7
nC

= 24 V,

1.9

0.3

0.6

0.9

ns

= 15 V,

5.8 12

5.8 10

14 25

1.6 5.0

ns

= 24 V,

4.8

6.7

13.6

1.8

9.2 ns

4.0 nC

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