ON NUP8011MU Schematic [ru]

NUP8011MU

Transient Voltage Suppressors

ESD Protection Diodes with Low
Clamping Voltage Array

This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, and other applications.
Its integrated design provides very effective and reliable protection for
eight separate lines using only one package. These devices are ideal
for situations where board space is at a premium.

Features

• Low Clamping Voltage

• UDFN Package, 1.2 x 1.8 mm

• Standoff Voltage: 4.3 V

• Low Leakage Current

• IEC61000−4−2, Level 4 ESD Protection

• Moisture Sensitivity Level 1

• This is a Pb−Free Device

Benefits

• Provides Protection for ESD Industry Standards: IEC 61000, HBM

• Protects the Line Against Transient Voltage Conditions

• Minimize Power Consumption of the System

• Minimize PCB Board Space

Applications

• ESD Protection for Data Lines

• Wireless Phones

• Handheld Products

• Notebook Computers

• LCD Displays

MAXIMUM RATINGS (T

Characteristic Symbol Value Unit

Steady State Power − 1 Diode (Note 1) P

Thermal Resistance,

Junction−to−Ambient
Above 25°C, Derate

Maximum Junction Temperature T

Operating Temperature Range T

Storage Temperature Range T

Lead Solder Temperature (10 seconds

duration)

IEC 61000−4−2 (ESD)Contact $8.0 kV

Machine Model − Class C MM 400 V

Human Body Model − Class 3B HBM 8.0 kV

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Only 1 diode under power. For all 4 diodes under power, PD will be 25%.

Mounted on FR−4 board with min pad.

See Application Note AND8308/D for further description of
survivability specs.

= 25°C unless otherwise noted)

A

D

R

q

JA

Jmax

−40 to +85 °C

OP

−55 to +150 °C

stg

T

L

380 mW

327

3.05

150 °C

260 °C

°C/W

mW/°C

http://onsemi.com

1

2 7

3 6

4 5

(Top View)

8

1

UDFN8

CASE 517AD

P3 = Specific Device Code
M = Month Code
G = Pb−Free Package

PIN CONNECTIONS

14

ORDERING INFORMATION

Device Package Shipping

NUP8011MUTAG UDFN8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

8

MARKING
DIAGRAM

P3 M

G

1

58

3000 / Tape & Reel

© Semiconductor Components Industries, LLC, 2009

September, 2009 − Rev. 2

1 Publication Order Number:

NUP8011MU/D

NUP8011MU

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol Parameter

V

I

V

RWM

V

P

Maximum Reverse Peak Pulse Current

PP

Clamping Voltage @ I

C

PP

Working Peak Reverse Voltage

I

R

BR

I

T

I

F

V

pk

Maximum Reverse Leakage Current @ V

Breakdown Voltage @ I

Test Current

Forward Current

Forward Voltage @ I

F

F

Peak Power Dissipation

T

RWM

VCV

BR

V

RWM

I

I

F

I

V

R

F

I

T

I

PP

Uni−Directional

V

C Capacitance @ VR = 0 and f = 1.0 MHz

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS (T

Breakdown Voltage

VBR @ 1 mA (V)

Device

Device

Marking

Min Nom Max V

= 25°C)

A

Leakage Current

IRM @ V

RWM

RM

I

RWM

(mA)

Typ Capacitance

@ 0 V Bias (pF)

(Note 2)

Typ Capacitance

@ 3 V Bias (pF)

(Note 2)

Typ Max Typ Max

V

C

Per IEC61000−4−2

(Note 3)

NUP8011MUTAG P3 6.47 6.8 7.14 4.3 1.0 12 14 6.7 9.5 Figures 1 and 2

(See Below)

2. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C

3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

http://onsemi.com

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

2