ON NUP5120X6 Schematic [ru]

NUP5120X6

)

5−Line Transient Voltage
Suppressor Array

This 5−line voltage transient suppressor array is designed for
application requiring transient voltage protection capability. It is
intended for use in over−transient voltage and ESD sensitive
equipment such as cell phones, portables, computers, printers and
other applications. This device features a monolithic common anode
design which protects five independent lines in a single
SOT−563 package.

Features

• Protects up to 5 Lines in a Single SOT−563 Package

• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model

and Class C (Exceeding 400 V) per Machine Model.

• Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)

• This is a Pb−Free Device

Applications

• Hand Held Portable Applications

• Serial and Parallel Ports

• Notebooks, Desktops, Servers

MAXIMUM RATINGS (T

Symbol Rating Value Unit

PPK 1 Peak Power Dissipation

T

J

T

STG

T

L

ESD Human Body Model (HBM)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Non−repetitive current pulse per Figure 1.

8x20 msec double exponential waveform,
(Note 1)

Operating Junction Temperature Range −40 to 125 °C
Storage Temperature Range −55 to 150 °C
Lead Solder Temperature – Maximum

(10 seconds)

Machine Model (MM)
IEC 61000−4−2 Air (ESD)
IEC 61000−4−2 Contact (ESD)

= 25°C, unless otherwise specified)

J

90 W

260 °C

16000

400

15000

8000

V

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SOT−563 5−LINE TRANSIENT

VOLTAGE SUPPRESSOR

PIN ASSIGNMENT

1

2

3

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. CATHODE

5. CATHODE

6. CATHODE

4

5

6

2

1

RN = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location

3

SOT−563

CASE 463A

STYLE 6

ORDERING INFORMATION

Device Package Shipping

NUP5120X6T1G SOT−563

NUP5120X6T2G SOT−563

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

(Pb−Free)

(Pb−Free)

6

5

4

MARKING
DIAGRAM

RN MG

G

†

4000/Tape & Reel

4000/Tape & Reel

© Semiconductor Components Industries, LLC, 2006

December, 2006 − Rev. 4

1 Publication Order Number:

NUP5120/D

NUP5120X6

ELECTRICAL CHARACTERISTICS (T

= 25°C, unless otherwise specified)

J

Parameter Conditions Symbol Min Typ Max Unit

Reverse Working Voltage (Note 2) V
Breakdown Voltage IT = 1 mA, (Note 3) V
Reverse Leakage Current V

= 3 V I

RWM

Capacitance VR = 0 V, f = 1 MHz (Line to GND)

VR = 2.5 V, f = 1 MHz (Line to GND)

RWM

BR
R

C

J

2. TVS devices are normally selected according to the working peak reverse voltage (V

or continuous peak operating voltage level.

3. VBR is measured at pulse test current IT.

− 5.0 V

6.2 6.8 7.2 V

− 0.01 0.5

− 54 70 pF

), which should be equal or greater than the DC

RWM

mA

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2