NUP5120X6
)
5−Line Transient Voltage
Suppressor Array
This 5−line voltage transient suppressor array is designed for
application requiring transient voltage protection capability. It is
intended for use in over−transient voltage and ESD sensitive
equipment such as cell phones, portables, computers, printers and
other applications. This device features a monolithic common anode
design which protects five independent lines in a single
SOT−563 package.
Features
• Protects up to 5 Lines in a Single SOT−563 Package
• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model
and Class C (Exceeding 400 V) per Machine Model.
• Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)
• This is a Pb−Free Device
Applications
• Hand Held Portable Applications
• Serial and Parallel Ports
• Notebooks, Desktops, Servers
MAXIMUM RATINGS (T
Symbol Rating Value Unit
PPK 1 Peak Power Dissipation
T
J
T
STG
T
L
ESD Human Body Model (HBM)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Non−repetitive current pulse per Figure 1.
8x20 msec double exponential waveform,
(Note 1)
Operating Junction Temperature Range −40 to 125 °C
Storage Temperature Range −55 to 150 °C
Lead Solder Temperature – Maximum
(10 seconds)
Machine Model (MM)
IEC 61000−4−2 Air (ESD)
IEC 61000−4−2 Contact (ESD)
= 25°C, unless otherwise specified)
J
90 W
260 °C
16000
400
15000
8000
V
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SOT−563 5−LINE TRANSIENT
VOLTAGE SUPPRESSOR
PIN ASSIGNMENT
1
2
3
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4
5
6
2
1
RN = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location
3
SOT−563
CASE 463A
STYLE 6
ORDERING INFORMATION
Device Package Shipping
NUP5120X6T1G SOT−563
NUP5120X6T2G SOT−563
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Pb−Free)
(Pb−Free)
6
5
4
MARKING
DIAGRAM
RN MG
G
†
4000/Tape & Reel
4000/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 4
1 Publication Order Number:
NUP5120/D
NUP5120X6
ELECTRICAL CHARACTERISTICS (T
= 25°C, unless otherwise specified)
J
Parameter Conditions Symbol Min Typ Max Unit
Reverse Working Voltage (Note 2) V
Breakdown Voltage IT = 1 mA, (Note 3) V
Reverse Leakage Current V
= 3 V I
RWM
Capacitance VR = 0 V, f = 1 MHz (Line to GND)
VR = 2.5 V, f = 1 MHz (Line to GND)
RWM
BR
R
C
J
2. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
− 5.0 V
6.2 6.8 7.2 V
− 0.01 0.5
− 54 70 pF
), which should be equal or greater than the DC
RWM
mA
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2
0
1000
I
, PEAK CURRENT (A)
REVERSE CURRENT (nA)
120
% OF RATED POWER OR I
PP
NUP5120X6
TA = 25 °C
100
80
60
40
20
100
10
PP
0.1
0
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating vs. Ambient
Temperature
TA = 25 °C
1
VCL, CLAMP VOLTAGE (V)
Figure 3. Peak Current vs. Clamp Voltage
1412
100
PEAK POWER (W)
1501251007550250
10
PULSE DURATION (μS)
101
10
Figure 2. Peak Power vs. Pulse Duration
60
50
40
30
20
10
, TYPICAL CAPACITANCE (pF)
T
C
161086
0
VR, REVERSE VOLTAGE (V)
TA = 25 °C
6543210
Figure 4. Typical Capacitance vs. Reverse
Voltage
1000
TA = 25 °C
100
10
1
0.1
0.01
Figure 5. Reverse Current vs. Reverse Voltage
TJ = 125 °C
TJ = 25 °C
4321
REVERSE VOLTAGE (V)
1
0.1
0.01
FORWARD CURRENT (A)
0.001
65
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3
TA = 25 °C
TJ = 125 °C
TJ = 25 °C
1.21.11.00.90.80.70.6
FORWARD VOLTAGE (V)
Figure 6. Typical Forward Current vs. Forward
Voltage
A
−X−
6
12 3
G
45
D 6 5 PL
0.08 (0.003) X
B
−Y−
NUP5120X6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE B
C
M
Y
SOLDERING FOOTPRINT
K
S
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
MILLIMETERS
DIMAMIN MAX MIN MAX
1.50 1.70 0.059 0.067
B 1.10 1.30 0.043 0.051
C 0.50 0.60 0.020 0.024
D 0.17 0.27 0.007 0.011
G 0.50 BSC 0.020 BSC
J 0.08 0.18 0.003 0.007
K
0.10 0.30
S
1.50 1.70
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
INCHES
0.004 0.012
0.059 0.067
0.3
0.0118
0.45
0.0177
1.0
1.35
0.0394
0.0531
0.5
0.5
0.0197
0.0197
mm
ǒ
SCALE 20:1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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inches
Ǔ
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4
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NUP5120/D
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