ON NUP4302MR6 Schematic [ru]

NUP4302MR6

Schottky Diode Array for
Four Data Line
ESD Protection

The NUP4302MR6 is designed to protect high speed data line

interface from ESD, EFT and lighting.

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Features

• Very Low Forward Voltage Drop

• Fast Switching

• PN Junction Guard Ring for Transient and ESD Protection

• ESD Rating of Class 3B (Exceeding 16 kV) per Human Body Model

and Class C (Exceeding 400 V) per Machine Model

• IEC 61000−4−2 Level 4 ESD Protection

• Flammability Rating: UL 94 V−0

• Pb−Free Package is Available

Applications

• Ultra High−Speed Switching

• USB 1.1 and 2.0 Power and Data Line Protection

• Digital Video Interface (DVI)

• Monitors and Flat Panel Displays

PIN CONFIGURATION

AND SCHEMATIC

I/O 1

GND 2

1/O 3

1

TSOP−6

CASE 318G

STYLE 12

67 = Specific Device Code

M

G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

= Date Code

6 I/O

5 V

4 I/O

MARKING
DIAGRAM

67 M G

G

1

CC

© Semiconductor Components Industries, LLC, 2006

March, 2006 − Rev. 3

ORDERING INFORMATION

Device Package Shipping

NUP4302MR6T1 TSOP−6 3000/Tape & Reel

NUP4302MR6T1G TSOP−6

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

3000/Tape & Reel

NUP4302MR6/D

†

NUP4302MR6

MAXIMUM RATINGS (T

Peak Reverse Breakdown Voltage V

Forward Power Dissipation (TA = 25°C) P

Forward Continuous Current I

Junction Operating Temperature T

Storage Temperature Range T

= 25°C unless otherwise noted)

J

Rating

Symbol Value Unit

BR

F

F

J

stg

30 V

225 mW

200 mA

−55 to +125 °C

−55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Breakdown Voltage V

Reverse Leakage I

Forward Voltage V

Forward Voltage V

Forward Voltage V

Forward Voltage V

Total Capacitance C

Reverse Recovery Time t

Symbol Conditions Min Typ Max Unit

= 25°C unless otherwise noted)

J

IR = 100 A

BR

VR = 25 V 30

R

IF = 0.1 mAdc 0.28 V

F

IF = 1.0 mAdc 0.35 V

F

IF = 10 mAdc 0.45 V

F

IF = 100 mAdc 1.00 V

F

VR = 0 V, f = 1.0 MHz, I/O to Ground

T

VR = 0 V, f = 1.0 MHz, I/O to I/O

IF = IR = 10 mA, I

rr

= 1.0 mA (Figure 1) 5.0 ns

R(REC)

30 V

28
18

A

pF

+10 V

50  OUTPUT

PULSE

GENERATOR

820 

2 k

100 H

0.1 F

I

F

0.1 F
t

t

r

p

t

I

F

10%

DUT

50  INPUT

SAMPLING

OSCILLOSCOPE

V

90%

R

INPUT SIGNAL

I

R

(IF = IR = 10 mA; measured

Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

rr

is equal to 10 mA.

R(peak)

Figure 1. Recovery Time Equivalent Test Circuit

t

rr

i

R(REC)

OUTPUT PULSE

at i

R(REC)

= 1 mA)

t

= 1 mA

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